High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta2NiSe7
| العنوان: | High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta2NiSe7 |
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| المؤلفون: | Jae-Hyuk Park, Jae-Hyun Lee, Asghar Ghulam, Chaeheon Woo, Kyung Hwan Choi, Sudong Chae, Tae Yeong Kim, Hak Ki Yu, Jiho Jeon, Xue Dong, Seungbae Oh, Jungyoon Ahn, Sang Ok Yoon, Han Eol Jang, Byung Joo Jeong, Jae-Young Choi, Bum Jun Kim, Bom Yi Lee, Sooheon Cho |
| المصدر: | ACS Applied Materials & Interfaces. 13:52871-52879 |
| بيانات النشر: | American Chemical Society (ACS), 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, Chalcogenide, Exfoliation joint, symbols.namesake, chemistry.chemical_compound, Crystallinity, chemistry, Electrical resistivity and conductivity, symbols, Breakdown voltage, General Materials Science, van der Waals force, Composite material, Ternary operation, Current density |
| الوصف: | We synthesized ternary composition chalcogenide Ta2NiSe7, a quasi-one-dimensional (Q1D) material with excellent crystallinity. To utilize the excellent electrical conductivity property of Ta2NiSe7, the breakdown current density (JBD) according to thickness change through mechanical exfoliation was measured. It was confirmed that as the thickness decreased, the maximum breakdown voltage (VBD) increased, and at 18 nm thickness, 35 MA cm-2 of JBD was measured, which was 35 times higher than that of copper, which is commonly used as an interconnect material. By optimization of the exfoliation process, it is expected that through a theoretical model fitting, the JBD can be increased to about 356 MA cm-2. It is expected that the low-dimensional materials with ternary compositions proposed through this experiment can be used as candidates for current-carrying materials that are required for the miniaturization of various electronic devices. |
| تدمد: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.1c14335 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::03efb64ba698fabf9747436a66cbbb7b https://doi.org/10.1021/acsami.1c14335 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........03efb64ba698fabf9747436a66cbbb7b |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19448252 19448244 |
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| DOI: | 10.1021/acsami.1c14335 |