Periodical
Structure and Electrical Properties of β-Ga2O3Films Obtained by Radio Frequency Magnetron Sputtering on Porous Silicon
| العنوان: | Structure and Electrical Properties of β-Ga2O3Films Obtained by Radio Frequency Magnetron Sputtering on Porous Silicon |
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| المؤلفون: | Kidalov, V. V., Dyadenchuk, A. F., Kladko, V. P., Gudymenko, O. I., Derhachov, M. P., Popov, S. O., Sushko, O. O., Kidalov, Vitali V. |
| المصدر: | ECS Journal of Solid State Science and Technology; February 2022, Vol. 11 Issue: 2 p025004-025004, 1p |
| مستخلص: | A wide range of possible applications of gallium oxide requires further investigations on growth techniques of its thin films, especially deposited on non-native substrates. One of the ways to avoid imperfection of Ga2O3film because of variations in structure and lattice parameters of substrate could be an exploitation of buffer porous layer previously synthesized on the substrate. The 170 nm films deposited on porous-Si/Si substrate by rf magnetron sputtering are found out to be composed of β-Ga2O3elliptical grains with sizes ∼150 nm. Both EDAX and Raman spectroscopy results show formation of a thin interfacial SiO2. Impedance spectroscopy measurements reveals two charge transfer processes with activation energies of 1.33 eV and 1.79 eV. |
| قاعدة البيانات: | Supplemental Index |
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