Academic Journal
Methods for Studying the Electrical Characteristics of the Epitaxial Layers of n/p-InxGa1 –xAs Solid Solutions for Large-Area Device Structures.
| العنوان: | Methods for Studying the Electrical Characteristics of the Epitaxial Layers of n/p-In |
|---|---|
| المؤلفون: | Platonov, N. D., Lebedev, A. A., Matukhin, V. L., Smirnov, A. A., Ivanov, A. F. |
| المصدر: | Inorganic Materials: Applied Research; Oct2024, Vol. 15 Issue 5, p1549-1557, 9p |
| مستخلص: | A search for an optimum technique for studying the electrical characteristics of thin n/p-InxGa |
| Copyright of Inorganic Materials: Applied Research is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| قاعدة البيانات: | Complementary Index |
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Array ( [Name] => Author [Label] => Authors [Group] => Au [Data] => <searchLink fieldCode="AR" term="%22Platonov%2C+N%2E+D%2E%22">Platonov, N. D.</searchLink><br /><searchLink fieldCode="AR" term="%22Lebedev%2C+A%2E+A%2E%22">Lebedev, A. A.</searchLink><br /><searchLink fieldCode="AR" term="%22Matukhin%2C+V%2E+L%2E%22">Matukhin, V. L.</searchLink><br /><searchLink fieldCode="AR" term="%22Smirnov%2C+A%2E+A%2E%22">Smirnov, A. A.</searchLink><br /><searchLink fieldCode="AR" term="%22Ivanov%2C+A%2E+F%2E%22">Ivanov, A. F.</searchLink> ) Array ( [Name] => TitleSource [Label] => Source [Group] => Src [Data] => Inorganic Materials: Applied Research; Oct2024, Vol. 15 Issue 5, p1549-1557, 9p ) Array ( [Name] => Abstract [Label] => Abstract [Group] => Ab [Data] => A search for an optimum technique for studying the electrical characteristics of thin n/p-InxGa<subscript>1–x</subscript>As semiconductor layers with different doping levels has been carried out. The primary task has been to measure the main electrical characteristics by different methods using resistivity (conductivity), majority carrier concentration, dependence of the main electrical parameters on the doping type and level, and their comparison. Using the example of the p- and n-In<subscript>0.01</subscript>Ga<subscript>0.99</subscript>As solid solutions grown by MOCVD, a technique for studying the main electrical characteristics of the epitaxial layers has been proposed, which takes into account the estimated homogeneity on large-area samples. Results obtained by different methods, including photoluminescence, contactless surface resistivity measurement, van der Pauw (Hall effect), electrochemical capacitance–voltage profiling, and in situ control, have been compared. Basing on the results obtained and comparison with the literature data, conclusions have been drawn concerning the need, sufficiency, and complementarity of the methods for controlling and studying semiconductor epitaxial structures. [ABSTRACT FROM AUTHOR] ) Array ( [Name] => Abstract [Label] => [Group] => Ab [Data] => <i>Copyright of Inorganic Materials: Applied Research is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) ) |
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