Academic Journal
Laser Etching of Quasi-1D TiS3 Nanoribbons by Raman Spectrophotometer.
| العنوان: | Laser Etching of Quasi-1D TiS |
|---|---|
| المؤلفون: | El-Sayed, M. A., Doroshina, N. V., Yakubovsky, D. I., Mishra, P., Syuy, A. V. |
| المصدر: | Bulletin of the Russian Academy of Sciences: Physics; 2022 Suppl, Vol. 86, pS135-S140, 6p |
| مستخلص: | Quasi one-dimensional materials are technologically very important due to their extraordinary properties. The properties are enhanced when these materials are exfoliated into single or few layers. In this work, we present the laser etching of TiS |
| Copyright of Bulletin of the Russian Academy of Sciences: Physics is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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Array ( [Name] => Author [Label] => Authors [Group] => Au [Data] => <searchLink fieldCode="AR" term="%22El-Sayed%2C+M%2E+A%2E%22">El-Sayed, M. A.</searchLink><br /><searchLink fieldCode="AR" term="%22Doroshina%2C+N%2E+V%2E%22">Doroshina, N. V.</searchLink><br /><searchLink fieldCode="AR" term="%22Yakubovsky%2C+D%2E+I%2E%22">Yakubovsky, D. I.</searchLink><br /><searchLink fieldCode="AR" term="%22Mishra%2C+P%2E%22">Mishra, P.</searchLink><br /><searchLink fieldCode="AR" term="%22Syuy%2C+A%2E+V%2E%22">Syuy, A. V.</searchLink> ) Array ( [Name] => TitleSource [Label] => Source [Group] => Src [Data] => Bulletin of the Russian Academy of Sciences: Physics; 2022 Suppl, Vol. 86, pS135-S140, 6p ) Array ( [Name] => Abstract [Label] => Abstract [Group] => Ab [Data] => Quasi one-dimensional materials are technologically very important due to their extraordinary properties. The properties are enhanced when these materials are exfoliated into single or few layers. In this work, we present the laser etching of TiS<subscript>3</subscript> nanoribbons synthesized by chemical vapor transport technique. The experiments were carried out using the TiS<subscript>3</subscript> nanoribbons with thicknesses ranging from 100 to 150 nm. These nanoribbons were transferred on a silicon substrate via mechanical exfoliation technique prior to the laser treatment for the etching process followed. The resulting etching depth was in the range of 20–25 nm with no oxidation. Through the experiments, it was found that the etching depth was independent of the initial thickness of the nanoribbons, which suggests that if samples had a smaller initial thickness, a monolayer can be obtained. We also observed significant (up to 3–4 nm) improvement of the surface roughness of the etched samples, which makes the laser etching technique promising for the development of flexible, efficient, and reliable optoelectronic devices. [ABSTRACT FROM AUTHOR] ) Array ( [Name] => Abstract [Label] => [Group] => Ab [Data] => <i>Copyright of Bulletin of the Russian Academy of Sciences: Physics is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) ) |
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