Academic Journal
A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm...
| العنوان: | A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm... |
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| المؤلفون: | Cheng, Z.Y., Ling, C.H. |
| المصدر: | Journal of Applied Physics. 5/15/1998, Vol. 83 Issue 10, p5289. 6p. 1 Diagram, 1 Chart, 8 Graphs. |
| مصطلحات موضوعية: | *OXIDES, *SILICON, *CHEMICAL structure |
| مستخلص: | Provides information on an experiment investigating a model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation. Methodology used to conduct the experiment; Dependence of the effective carrier lifetime ...eff on irrational time; Results of the experiment. |
| قاعدة البيانات: | Academic Search Index |
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