المؤلفون: Kreissl, J., Moehrle, M., Sigmund, A., Bochnia, R., Harde, P., Ulrici, W.

مصطلحات موضوعية: hole density, hydrogen, iii-v semiconductors, indium compounds, passivation, semiconductor lasers, sputter etching, zinc, hydrogen passivation, indium phosphide, reactive ion etching, contact stripe formation, zinc acceptor, hole concentration, buried heterostructure laser, i-v characteristics, impurity complex, activation energy

Time: 621

Relation: International Conference on Indium Phosphide and Related Materials (IPRM) 2000; International Conference on Indium Phosphide and Related Materials 2000. Conference proceedings; https://publica.fraunhofer.de/handle/publica/336736

الاتاحة: https://publica.fraunhofer.de/handle/publica/336736
https://doi.org/10.1109/ICIPRM.2000.850252