المؤلفون: TANG Ge1,2;XIAO Yao1;SUN Peng3;LIU Jingrui1;ZHANG Fuwang1;LI Mo2,

المصدر: Yuanzineng kexue jishu, Vol 57, Iss 12, Pp 2314-2325 (2023)

مصطلحات موضوعية: laser-assisted simulation, dose rate effect, wide band gap semiconductor, conversion factor, Nuclear engineering. Atomic power, TK9001-9401, Nuclear and particle physics. Atomic energy. Radioactivity, QC770-798

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1000-6931

URL الوصول: https://doaj.org/article/2df90957fbe14c218ffc5ee5a7576511

المؤلفون: Le Goff, Grégoire, Chorfi, Ilias, Sutto, Thierry, Alonso, Corinne

المساهمون: Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), ST Microelectronics, CEA Tech Occitanie (DOCC), CEA Tech en régions (CEA-TECH-Reg), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Toulouse III - Paul Sabatier (UT3)

المصدر: PCIM 2024 - Power Conversion and Intelligent Motion ; https://hal.science/hal-04452104 ; PCIM 2024 - Power Conversion and Intelligent Motion, Jun 2024, Nuremberg, Germany ; https://pcim.mesago.com/nuernberg/en/exhibitor-search/become_exhibitor.html

مصطلحات موضوعية: MMC - Modular Multilevel Converter, Design Optimization, Wide band gap semiconductor, Energy Control Strategy, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [MATH.MATH-OC]Mathematics [math]/Optimization and Control [math.OC]

جغرافية الموضوع: Nuremberg, Germany

Relation: hal-04452104; https://hal.science/hal-04452104; https://hal.science/hal-04452104/document; https://hal.science/hal-04452104/file/PCIM2024_MMC_OptimSizing_Abstract_VS1bis.pdf

الاتاحة: https://hal.science/hal-04452104
https://hal.science/hal-04452104/document
https://hal.science/hal-04452104/file/PCIM2024_MMC_OptimSizing_Abstract_VS1bis.pdf

المؤلفون: Dittrich T., Parisini A., Pavesi M., Baraldi A., Sacchi A., Mezzadri F., Mazzolini P., Bosi M., Seravalli L., Bosio A., Fornari R.

المساهمون: Dittrich, T., Parisini, A., Pavesi, M., Baraldi, A., Sacchi, A., Mezzadri, F., Mazzolini, P., Bosi, M., Seravalli, L., Bosio, A., Fornari, R.

مصطلحات موضوعية: Transient surface photovoltage spectroscopy, Ultra-wide band gap semiconductor, β- and κ-Ga2O3 polymorph, Photoelectrical investigation, Surface, bulk, and interface defects

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001261918700001; volume:51; numberofpages:11; journal:SURFACES AND INTERFACES; https://hdl.handle.net/11381/2988633

الاتاحة: https://hdl.handle.net/11381/2988633
https://doi.org/10.1016/j.surfin.2024.104642

المؤلفون: Zanoni, Enrico, Santi, Carlo De, Gao, Zhan, Buffolo, Matteo, Fornasier, Mirko, Saro, Marco, Pieri, Francesco De, Rampazzo, Fabiana, Meneghesso, Gaudenzio, Meneghini, Matteo, Zagni, Nicolo', Chini, Alessandro, Verzellesi, Giovanni

المساهمون: Zanoni, Enrico, Santi, Carlo De, Gao, Zhan, Buffolo, Matteo, Fornasier, Mirko, Saro, Marco, Pieri, Francesco De, Rampazzo, Fabiana, Meneghesso, Gaudenzio, Meneghini, Matteo, Zagni, Nicolo', Chini, Alessandro, Verzellesi, Giovanni

مصطلحات موضوعية: Aluminum gallium nitride, Deep level, electron device failure physic, Gallium nitride, gallium nitride high-electron-mobility transistors (GaN HEMT), HEMT scaling, HEMT, Logic gate, Microwave transistor, millimeter wave, reliability, short-channel effect, Silicon, Wide band gap semiconductor

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001087462000001; volume:71; issue:3; firstpage:1396; lastpage:1407; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; https://hdl.handle.net/11380/1320426; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85174808819

الاتاحة: https://hdl.handle.net/11380/1320426
https://doi.org/10.1109/TED.2023.3318564

المؤلفون: Hamdaoui, Youssef, Abid, Idriss, Michler, Sondre, Ziouche, Katir, Medjdoub, F

المساهمون: WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), SILTRONIC AG, This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 101007229., Renatech Network, CMNF, European Project: 101007229,H2020,H2020-ECSEL-2020-2-RIA-two-stage,YESvGaN(2021)

المصدر: Proceeding of CSW2023 ; Compound semiconductor week 2023 ; https://hal.science/hal-04436387 ; Compound semiconductor week 2023, May 2023, Jeju, South Korea

مصطلحات موضوعية: Wide band gap semiconductor GaN-on-Si Vertical power devices, Wide band gap semiconductor, GaN-on-Si, Vertical power devices, [SPI]Engineering Sciences [physics]

جغرافية الموضوع: Jeju, South Korea

Relation: info:eu-repo/grantAgreement//101007229/EU/Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost/YESvGaN; hal-04436387; https://hal.science/hal-04436387; https://hal.science/hal-04436387/document; https://hal.science/hal-04436387/file/CSW-2023_Abstract_IEMN-Siltronic.pdf

الاتاحة: https://hal.science/hal-04436387
https://hal.science/hal-04436387/document
https://hal.science/hal-04436387/file/CSW-2023_Abstract_IEMN-Siltronic.pdf

المؤلفون: Dina S. Ahmed, Mohammed Al-Baidhani, Hadeel Adil, Muna Bufaroosha, Alaa A. Rashad, Khalid Zainulabdeen, Emad Yousif

المصدر: Materials Science for Energy Technologies, Vol 6, Iss , Pp 29-34 (2023)

مصطلحات موضوعية: Phenol formaldehyde, Resins, Diffuse reflectance spectroscopy, Kubelka-Munk function, Nano ZnO, Wide-band gap semiconductor, Materials of engineering and construction. Mechanics of materials, TA401-492, Energy conservation, TJ163.26-163.5

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2589299122000507; https://doaj.org/toc/2589-2991

URL الوصول: https://doaj.org/article/942c518c629049fb8e25e235efdc7027

المؤلفون: Nicola Rinaldi, Rosalba Liguori, Alexander May, Chiara Rossi, Mathias Rommel, Alfredo Rubino, Gian Domenico Licciardo, Luigi Di Benedetto

المصدر: Sensors, Vol 23, Iss 24, p 9653 (2023)

مصطلحات موضوعية: wide band-gap semiconductor, silicon carbide, temperature sensor based on oscillator, process parameter variation, Chemical technology, TP1-1185

وصف الملف: electronic resource

Relation: https://www.mdpi.com/1424-8220/23/24/9653; https://doaj.org/toc/1424-8220

URL الوصول: https://doaj.org/article/4a823bb161824b74ab1170918eca61c5

المؤلفون: Di Gioia, G., Frayssinet, E., Samnouni, M., Chinni, V., Mondal, P., Treuttel, J., Wallart, X., Zegaoui, M., Ducournau, Guillaume, Roelens, Yannick, Cordier, Yvon, Zaknoune, Mohamed

المساهمون: Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), LERMA Cergy (LERMA), Laboratoire d'Etude du Rayonnement et de la Matière en Astrophysique et Atmosphères = Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres (LERMA), École normale supérieure - Paris (ENS-PSL), Université Paris Sciences et Lettres (PSL)-Université Paris Sciences et Lettres (PSL)-Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire de Paris, Centre National de la Recherche Scientifique (CNRS)-Université Paris Sciences et Lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-CY Cergy Paris Université (CY)-École normale supérieure - Paris (ENS-PSL), Centre National de la Recherche Scientifique (CNRS)-Université Paris Sciences et Lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-CY Cergy Paris Université (CY), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), This work was supported by the French ANR (Agence Nationale de la Recherche), under the CE24 ‘SchoGAN’ project. This work was also supported by the CPER “Photonics for Society”, the CPER “WAVETECH”, and the Hauts de France Regional Council and the French Network RENATECH, Renatech Network, CMNF, ANR-17-CE24-0034,SchoGaN,Diodes Schottky GaN pour la génération de signaux THz(2017)

المصدر: ISSN: 0361-5235.

مصطلحات موضوعية: GaN, Schottky diode, frequency multipliers, THz, wide band gap semiconductor, [SPI.TRON]Engineering Sciences [physics]/Electronics

الاتاحة: https://hal.science/hal-04115301
https://hal.science/hal-04115301v1/document
https://hal.science/hal-04115301v1/file/Di%20Gioia_High%20Breakdown%20Voltage%20GaN%20Schottky%20Diodes%20for%20THz%20Frequency%20Multipliers%20p.tprint.pdf
https://doi.org/10.1007/s11664-023-10499-3

المؤلفون: Zagni, Nicolo', Zhan, Veronica Gao, Verzellesi, Giovanni, Chini, Alessandro, Pantellini, Alessio, Natali, Marco, Lucibello, Andrea, Latessa, Luca, Lanzieri, Claudio, Santi, Carlo De, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico

المساهمون: Zagni, Nicolo', Zhan, Veronica Gao, Verzellesi, Giovanni, Chini, Alessandro, Pantellini, Alessio, Natali, Marco, Lucibello, Andrea, Latessa, Luca, Lanzieri, Claudio, Santi, Carlo De, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico

مصطلحات موضوعية: Carbon Doping, Degradation, Electron trap, GaN HEMT, HEMT, Hot Electron, Logic gate, MODFET, Reliability, Step Stre, Stre, Wide band gap semiconductor

Relation: volume:23; firstpage:453; lastpage:460; journal:IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY; https://hdl.handle.net/11380/1313186; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85168261146

الاتاحة: https://hdl.handle.net/11380/1313186
https://doi.org/10.1109/TDMR.2023.3305033

المؤلفون: Javier García-Fernández, María Hernando, Almudena Torres-Pardo, María Luisa López, María Teresa Fernández-Díaz, Qing Zhang, Osamu Terasaki, Julio Ramírez-Castellanos, José M. González-Calbet

المصدر: Nanomaterials; Volume 13; Issue 14; Pages: 2054

مصطلحات موضوعية: nano-characterization, neutron powder diffraction, (Cs)-corrected electron microscopy, impedance spectroscopy, wide band gap semiconductor

وصف الملف: application/pdf

Relation: Inorganic Materials and Metal-Organic Frameworks; https://dx.doi.org/10.3390/nano13142054

الاتاحة: https://doi.org/10.3390/nano13142054

المؤلفون: Nivedita Pan, Lopamudra Roy, Md. Nur Hasan, Amrita Banerjee, Ria Ghosh, Meshari A. Alsharif, Basim H. Asghar, Rami J. Obaid, Arpita Chattopadhyay, Ranjan Das, Saleh A. Ahmed, Samir Kumar Pal

المصدر: Micromachines; Volume 14; Issue 5; Pages: 980

مصطلحات موضوعية: D-π-A organic photosensitizer, wide band gap semiconductor, photocatalysis, ultrafast femtosecond dynamics

وصف الملف: application/pdf

Relation: B：Biology and Biomedicine; https://dx.doi.org/10.3390/mi14050980

الاتاحة: https://doi.org/10.3390/mi14050980

المؤلفون: Gil Bernard, Cassabois Guillaume, Cusco Ramon, Fugallo Giorgia, Artus Lluis

المصدر: Nanophotonics, Vol 9, Iss 11, Pp 3483-3504 (2020)

مصطلحات موضوعية: 2d materials, boron nitride, deep ultra violet emission, quantem technologies, single photon sources, wide band gap semiconductor, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2192-8606; https://doaj.org/toc/2192-8614

URL الوصول: https://doaj.org/article/538acf9b11c842dda68d4107a9fd00a6

المؤلفون: Sutter-Fella, Carolin M, Li, Yanbo, Amani, Matin, Ager, Joel W, Toma, Francesca M, Yablonovitch, Eli, Sharp, Ian D, Javey, Ali

المصدر: Nano Letters. 16(1)

مصطلحات موضوعية: Macromolecular and Materials Chemistry, Chemical Sciences, Physical Chemistry, Halide perovskite, wide band gap semiconductor, quantum yield, tandem device, Nanoscience & Nanotechnology

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/67k7r3w9
https://escholarship.org/content/qt67k7r3w9/qt67k7r3w9.pdf

المؤلفون: Rehm, Jana, Chou, Ta-Shun, Bin Anooz, Saud, Seyidov, Palvan, Fiedler, Andreas, Galazka, Zbigniew, Popp, Andreas

مصطلحات موضوعية: Al-alloy, High power electronics, High-power devices, Power electronic applications, Radiofrequencies, Solar blind ultraviolet, Thin-films, Ultra-wide, Wide-band-gap semiconductor, β -Ga2O3

Time: 530

وصف الملف: application/pdf

الاتاحة: https://oa.tib.eu/renate/handle/123456789/11306
https://doi.org/10.34657/10342

المؤلفون: Yufei Yang, Yi Peng, Muhammad Farooq Saleem, Ziqian Chen, Wenhong Sun

المصدر: Materials; Volume 15; Issue 13; Pages: 4396

مصطلحات موضوعية: hexagonal boron nitride, wide-band-gap semiconductor, physical vapor deposition, chemical vapor deposition, co-segregation method

وصف الملف: application/pdf

Relation: Smart Materials; https://dx.doi.org/10.3390/ma15134396

الاتاحة: https://doi.org/10.3390/ma15134396

المؤلفون: Bhadoria, Shubhangi, Dijkhuizen, Frans, Raj, Rishabh, Wang, Xiongfei, Xu, Qianwen, Matioli, Elison, Kostov, Konstantin Stoychev, Nee, Hans-Peter

المصدر: IEEE transactions on power electronics. 38(3):3569-3589

مصطلحات موضوعية: Bonding techniques, high temperature, new layouts, overcurrent (OC), packaging, parasites, phase-change materials (PCMs), power modules, wide band gap semiconductors, Chip scale packages, Energy gap, High temperature applications, High temperature operations, Microprocessor chips, Power converters, Power MOSFET, Schottky barrier diodes, Substrates, Heating system, Highest temperature, Insulatedgate bipolar transistor (IGBTs), MOS-FET, MOSFETs, Multi chip modules, New layout, Overcurrents, Parasite, Power module, Schottky diodes, Wide-band-gap semiconductor, Silicon carbide

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-64819

المؤلفون: Tsung-Han Yang, Houqiang Fu, Kai Fu, Chen Yang, Jossue Montes, Xuanqi Huang, Hong Chen, Jingan Zhou, Xin Qi, Xuguang Deng, Yuji Zhao

المصدر: IEEE Journal of the Electron Devices Society, Vol 8, Pp 857-863 (2020)

مصطلحات موضوعية: Gallium nitride, power electronics, wide band-gap semiconductor, Schottky barrier diode, edge termination, floating metal ring, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9157994/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/55a574e0f96d41e9af02f4ef7fbb06e8

المؤلفون: Modolo, Nicola, De Santi, Carlo, Sicre, Sebastien, Minetto, Andrea, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

المساهمون: Modolo, Nicola, De Santi, Carlo, Sicre, Sebastien, Minetto, Andrea, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

مصطلحات موضوعية: Logic gate, Threshold voltage, Stre, Temperature measurement, Transient analysi, Voltage measurement, Wide band gap semiconductor, AlGaN barrier, electron trapping, positive bias threshold instability (PBTI), power gallium nitride (GaN) HEMT, threshold voltage shift

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001205899400098; volume:39; issue:6; firstpage:7045; lastpage:7051; numberofpages:7; journal:IEEE TRANSACTIONS ON POWER ELECTRONICS; https://hdl.handle.net/11577/3523747; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85186083306

الاتاحة: https://hdl.handle.net/11577/3523747
https://doi.org/10.1109/tpel.2024.3368506

المؤلفون: Laura Anoldo, Claudia Triolo, Saverio Panarello, Francesca Garescì, Sebastiano Russo, Angelo Alberto Messina, Michele Calabretta, Salvatore Patanè.

المساهمون: Anoldo, Laura, Triolo, Claudia, Panarello, Saverio, Garesci', Francesca, Russo, Sebastiano, Alberto Messina, Angelo, Calabretta, Michele, Patane', Salvatore

مصطلحات موضوعية: Coffin Manson, Power MOSFET, Reliability, Rough surface, Silicon Carbide, Strain, Strain. Wide Band Gap semiconductor, Stre, Surface roughne, Surface treatment, Temperature measurement, Thermomechanical processes

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000668843100034; volume:42; issue:7; firstpage:1089; lastpage:1092; numberofpages:4; journal:IEEE ELECTRON DEVICE LETTERS; http://hdl.handle.net/11570/3205729; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85105865395; https://ieeexplore.ieee.org/document/9420737

الاتاحة: http://hdl.handle.net/11570/3205729
https://doi.org/10.1109/LED.2021.3077064
https://ieeexplore.ieee.org/document/9420737

المؤلفون: Xing Liu (221084), Jian Zhou (28020), Li Huang (107408), Hong-Ping Xiao (2394640), Tatiana R. Amarante (1506973), Filipe A. Almeida Paz (8725860), Bin Xiang (1424440), Lianshe Fu (1610107)

مصطلحات موضوعية: Biochemistry, Medicine, Cell Biology, Genetics, Molecular Biology, Space Science, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Ni, 4 S 9, theory calculation, photocurrent response, wide-band-gap semiconductor, energy gap, SDA, 3- D, photocatalytic degradation, Cu 4, Cu 8 S 12, visible-light irradiation, 1.91 eV, structure-directing agent

Relation: https://figshare.com/articles/journal_contribution/A_Copper_I_-Thioarsenate_III_Inorganic_Framework_Directed_by_Ni_en_sub_3_sub_sup_2_sup_/14470842

الاتاحة: https://doi.org/10.1021/acs.inorgchem.1c00703.s001