المؤلفون: Ivan Marri (1746247), Simone Grillo (14334607), Michele Amato (1675132), Stefano Ossicini (1746253), Olivia Pulci (2363863)

مصطلحات موضوعية: Biophysics, Medicine, Cell Biology, Cancer, Space Science, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, type ii transition, edge state localization, lumo mainly localized, homo mainly localized, type ii offset, type ii band, ge shell region, si core region, mainly localized, core region, shell thickness, edge states, offset properties, offset character, offset alignment, spherical sige, si interface, results point, quantum confinement, ge regions, ge atoms, electronic properties, effects induced

Relation: https://figshare.com/articles/journal_contribution/Interplay_of_Quantum_Confinement_and_Strain_Effects_in_Type_I_to_Type_II_Transition_in_GeSi_Core_Shell_Nanocrystals/21824644

الاتاحة: https://doi.org/10.1021/acs.jpcc.2c07024.s001

المؤلفون: Bavinck, Maaike Bouwes, Jons, Klaus D., Zielinski, Michal, Patriarche, Gilles, Harmand, Jean-Christophe, Akopian, Nika, Zwiller, Val

المصدر: Nano letters (Print). 16(2):1081-1085

مصطلحات موضوعية: Crystal phase quantum dot, nanowire, InP, two-photon cascaded emission, type II transition

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-183654

المؤلفون: Luo XD, Bian LF, Xu ZY, Luo HL, Wang YQ, Wang JN, Ge WK, Luo XD,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Gaassb/gaas, Selectively-excited, Type Ii Transition, Room-temperature, Gaas, Dots, Operation, 半导体物理, room temperature, gallium arsenide, arseniures de gallium, galliumarsenid, 运算

Relation: ACTA PHYSICA SINICA; Luo XD; Bian LF; Xu ZY; Luo HL; Wang YQ; Wang JN; Ge WK .Study of optical properties in GaAs1-xSbx/GaAs single quantum wells ,ACTA PHYSICA SINICA,2003 ,52 (7):1761-1765; http://ir.semi.ac.cn/handle/172111/11522

الاتاحة: http://ir.semi.ac.cn/handle/172111/11522

المساهمون: Chow, W

المصدر: Phys. Rev., B 5: No. 11, 4404-10(1 Jun 1972).; Other Information: Orig. Receipt Date: 31-DEC-72

وصف الملف: Medium: X

URL الوصول: http://www.osti.gov/scitech/biblio/4683715

المؤلفون: Lionel Gérard, Jean-Marc Jancu, Jan-Peter Richters, Henri Mariette, Régis André, J. Bleuse, Jacky Even, Cedric Robert, Soline Boyer-Richard

المساهمون: Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, Nanophysique et Semiconducteurs (NPSC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)

المصدر: Nanoscale Research Letters
Nanoscale Research Letters, 2012, International Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), 7, pp.543. ⟨10.1186/1556-276X-7-543⟩
Nanoscale Research Letters, SpringerOpen, 2012, International Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), 7, pp.543. ⟨10.1186/1556-276X-7-543⟩

مصطلحات موضوعية: 73.21.Cd, Materials science, Superlattice, Nanochemistry, Physics::Optics, Nanotechnology, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Absorption, Condensed Matter::Materials Science, Tight binding, Materials Science(all), 0103 physical sciences, General Materials Science, Tight-binding, 010306 general physics, Absorption (electromagnetic radiation), [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Nano Express, business.industry, ZnTe/CdSe, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 78.67.Pt, Chemical species, Type-II transition, 78.66.Hf, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b4625ba76c5ac91e18522bd4c14afbb
https://hal.science/hal-00743125/document

المؤلفون: Boyer-Richard, Soline, Robert, Cédric, Gérard, Lionel, Richters, Jan-Peter, André, Régis, Bleuse, Joël, Mariette, Henri, Even, Jacky, Jancu, Jean-Marc

مصطلحات موضوعية: Type-II transition, Superlattice, ZnTe/CdSe, Absorption, Tight-binding, 73.21.Cd, 78.67.Pt, 78.66.Hf

Relation: http://www.nanoscalereslett.com/content/7/1/543

الاتاحة: http://www.nanoscalereslett.com/content/7/1/543

المؤلفون: 羅向東, 邊歷峰, 徐仲英, 羅海林, 王玉琦, 王建農, 葛惟琨

مصطلحات موضوعية: GaAsSb/GaAs, Selectively-excited, Type II transition, 選擇激發, Ⅱ類躍遷

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-16034; 物理学报=Acta Physica Sinica, v. 52, (7), July 2003, p. 1761-1765; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1000-3290&rft.volume=52&rft.issue=7&rft.date=2003&rft.spage=1761&rft.epage=1765&rft.aulast=Luo&rft.aufirst=XD&rft.atitle=Study+of+optical+properties+in+GaAs1-xSbx/GaAs+single+quantum+wells; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000183990700038

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-16034
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1000-3290&rft.volume=52&rft.issue=7&rft.date=2003&rft.spage=1761&rft.epage=1765&rft.aulast=Luo&rft.aufirst=XD&rft.atitle=Study+of+optical+properties+in+GaAs1-xSbx/GaAs+single+quantum+wells
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000183990700038

المؤلفون: 羅向東, 邊歷峰, 徐仲英, 羅海林, 王玉琦, 王建農, 葛惟琨

مصطلحات موضوعية: GaAsSb/GaAs, Selectively-excited, Type II transition, 選擇激發, Ⅱ類躍遷

Relation: http://repository.ust.hk/ir/Record/1783.1-16034; 物理学报=Acta Physica Sinica, v. 2003, (07), 2003, p. 1761-1765; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1000-3290&rft.volume=52&rft.issue=7&rft.date=2003&rft.spage=1761&rft.epage=1765&rft.aulast=Luo&rft.aufirst=XD&rft.atitle=Study+of+optical+properties+in+GaAs1-xSbx/GaAs+single+quantum+wells; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000183990700038

الاتاحة: http://repository.ust.hk/ir/Record/1783.1-16034
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1000-3290&rft.volume=52&rft.issue=7&rft.date=2003&rft.spage=1761&rft.epage=1765&rft.aulast=Luo&rft.aufirst=XD&rft.atitle=Study+of+optical+properties+in+GaAs1-xSbx/GaAs+single+quantum+wells
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000183990700038

المؤلفون: Zhicheng Su (4665526), Naiyin Wang (6842447), Hark Hoe Tan (1552666), Chennupati Jagadish (1338390)

مصطلحات موضوعية: Biophysics, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, type II interface 2 D localization, type II transitions, 2 D Carrier Localization, excitation fluence increases, fault-induced ZB segments, type II transition, WZ-ZB, carrier localization effect, carrier dynamics, nanomembrane, type II interface, semiconductor nanostructures, ZB conduction band results, WZ phase layer, Interesting novel emission polariza., Novel Layered InP Nanomembranes

Relation: https://figshare.com/articles/journal_contribution/2D_Carrier_Localization_at_the_Wurtzite-Zincblende_Interface_in_Novel_Layered_InP_Nanomembranes/14748630

الاتاحة: https://doi.org/10.1021/acsphotonics.1c00287.s001