المؤلفون: ZhuangEn Fu, Piumi I. Samarawickrama, Yanglin Zhu, Zhiqiang Mao, Wenyong Wang, Kenji Watanabe, Takashi Taniguchi, Jinke Tang, John Ackerman, Jifa Tian

مصطلحات موضوعية: Neuroscience, Biotechnology, Science Policy, Space Science, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, sparked considerable interest, newly predicted ferroelectricity, low writing power, hysteretic transport observed, nonvolatile memristor using, inherent magnetic properties, zero magnetic field, exploring memristive effects, 3 , nonvolatile memristive effect, memristive effect, magnetic field, trivial effects, nonvolatile memory, memristive devices, magnetic materials, developing nonvolatile, tunneling resistance, tunneling junction, neuromorphic computing, gate voltage, developing next

Relation: https://figshare.com/articles/journal_contribution/Nonvolatile_Memristive_Effect_in_Few-Layer_CrI_sub_3_sub_Driven_by_Electrostatic_Gating/24788341

الاتاحة: https://doi.org/10.1021/acs.nanolett.3c03926.s001
https://figshare.com/articles/journal_contribution/Nonvolatile_Memristive_Effect_in_Few-Layer_CrI_sub_3_sub_Driven_by_Electrostatic_Gating/24788341

المؤلفون: Yasser Zare, Kyong Yop Rhee

المصدر: Engineering Science and Technology, an International Journal, Vol 24, Iss 3, Pp 605-610 (2021)

مصطلحات موضوعية: Polymer nanocomposites, Carbon nanotubes (CNTs), Conductivity, Tunneling resistance, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2215098620342415; https://doaj.org/toc/2215-0986

URL الوصول: https://doaj.org/article/545aa94464ab4401a679d504f0d63640

المؤلفون: Chen, C. Julian, author

المصدر: Introduction to Scanning Tunneling Microscopy, 2021, ill.

الاتاحة: https://doi.org/10.1093/oso/9780198856559.003.0005

المؤلفون: Hoon Hahn Yoon (3591698), Faisal Ahmed (1967506), Yunyun Dai (5999693), Henry A. Fernandez (9220655), Xiaoqi Cui (2918258), Xueyin Bai (3726028), Diao Li (5846921), Mingde Du (2734255), Harri Lipsanen (1363689), Zhipei Sun (1885942)

مصطلحات موضوعية: Medicine, Physiology, Ecology, Sociology, Plant Biology, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, promising building blocks, photogating effect coupled, exhibits asymmetric rectifying, tunneling junction formed, tunable quantum tunneling, 3 , 2 , topologically insulating bi, low dark current, dark current, tunneling resistance, significantly suppresses, novel concept, mostly limited, infrared ranges, inevitable trade, gapless nature, findings provide, electrical tuning, broadband photodetection

Relation: https://figshare.com/articles/journal_contribution/Tunable_Quantum_Tunneling_through_a_Graphene_Bi_sub_2_sub_Se_sub_3_sub_Heterointerface_for_the_Hybrid_Photodetection_Mechanism/17116241

الاتاحة: https://doi.org/10.1021/acsami.1c18606.s001

المؤلفون: Jang Hyun Kim, Hyun Woo Kim, Garam Kim, Sangwan Kim, Byung-Gook Park

المصدر: Micromachines; Volume 10; Issue 1; Pages: 30

مصطلحات موضوعية: band-to-band tunneling, tunnel field-effect transistor, low operating power device, tunneling resistance, sub- threshold swing, ambipolar current, elevated drain

وصف الملف: application/pdf

Relation: A：Physics; https://dx.doi.org/10.3390/mi10010030

الاتاحة: https://doi.org/10.3390/mi10010030

المؤلفون: Esmaeili A., Sbarufatti C., Ma D., Manes A., Jimenez-Suarez A., Urena A., Dellasega D., Hamouda A. M. S.

المساهمون: Esmaeili, A., Sbarufatti, C., Ma, D., Manes, A., Jimenez-Suarez, A., Urena, A., Dellasega, D., Hamouda, A. M. S.

مصطلحات موضوعية: Crack, Epoxy, Piezoresistivity, Sensitivity, SWCNT, Tunneling resistance

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000509630000010; volume:186; firstpage:1; lastpage:13; numberofpages:13; journal:COMPOSITES SCIENCE AND TECHNOLOGY; http://hdl.handle.net/11311/1119866; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85075263333; http://www.journals.elsevier.com/composites-science-and-technology/

الاتاحة: http://hdl.handle.net/11311/1119866
https://doi.org/10.1016/j.compscitech.2019.107918
http://www.journals.elsevier.com/composites-science-and-technology/

المؤلفون: Andrea Manes, A. Esmaeili, Dayou Ma, Alberto Jiménez-Suárez, D. Dellasega, Abdel Magid Hamouda, Claudio Sbarufatti, Alejandro Ureña

مصطلحات موضوعية: Materials science, Tunneling resistance, 02 engineering and technology, Carbon nanotube, 010402 general chemistry, 01 natural sciences, law.invention, Brittleness, Fracture toughness, Sensitivity, Flexural strength, law, SWCNT, Piezoresistivity, Ultimate tensile strength, Composite material, Nanocomposite, Crack, General Engineering, Fracture mechanics, Epoxy, 021001 nanoscience & nanotechnology, 0104 chemical sciences, visual_art, Ceramics and Composites, visual_art.visual_art_medium, 0210 nano-technology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3992897e71423995fc223f3e5bf9afd7
http://hdl.handle.net/11311/1119866

المؤلفون: Chen, C. Julian, author

المصدر: Introduction to Scanning Tunneling Microscopy : Second Edition, 2007, ill.

الاتاحة: http://www.oxfordscholarship.com/view/10.1093/acprof:oso/9780199211500.001.0001/acprof-9780199211500-chapter-5

المؤلفون: 劉 宏喜, 山本 眞史, 平田 進之佑, 本田 佑輔, 松田 健一, 植村 哲也

المصدر: JSAP Annual Meetings Extended Abstracts. 2011, :1543

المؤلفون: Masayuki Kanehara, Toshiharu Teranishi, Yutaka Majima, 寺西 利治, 真島 豊, 金原 正幸

المصدر: Polymer Preprints, Japan. 2009, :2907

المؤلفون: Zhang, Liang, Yan, Yuan, Wu, Han-Chun, Yu, Dapeng, Liao, Zhi-Min

المساهمون: Liao, ZM (reprint author), Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China., Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China., Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China., Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China., Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China.

المصدر: PubMed ; SCI ; EI

مصطلحات موضوعية: graphene, topological insulators, van der Waals heterostructures, tunneling resistance, gate voltage modulation, TOPOLOGICAL INSULATOR, GRAPHENE HETEROSTRUCTURES, BI2SE3, TRANSISTOR

Relation: ACS NANO.2016,10,(3),3816-3822.; 1390555; http://hdl.handle.net/20.500.11897/434677; WOS:000372855400087

الاتاحة: https://hdl.handle.net/20.500.11897/434677
https://doi.org/10.1021/acsnano.6b00659

المؤلفون: 김현우

المساهمون: 박병국, HYUN WOO KIM, 공과대학 전기·컴퓨터공학부

مصطلحات موضوعية: band-to-band tunneling, tunnel field-effect transistor, low operating power device, tunneling resistance, subthreshold swing, ambipolar current

Time: 621

وصف الملف: application/pdf; 9991066 bytes

Relation: 000000026169; http://hdl.handle.net/10371/119079

الاتاحة: http://hdl.handle.net/10371/119079

المؤلفون: Cho, Seongjae, Kang, In Man, Kim, Kyung Rok

مصطلحات موضوعية: Equivalent circuit, nanowire, radio-frequency (RF), small-signal analysis, tunneling FET (TFET), tunneling resistance, y -parameters

Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.10, pp.3318 - 3324; https://scholarworks.unist.ac.kr/handle/201301/3897; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84884812152; 1036; 12652; 2-s2.0-84884812152; 000324928900047

الاتاحة: https://scholarworks.unist.ac.kr/handle/201301/3897
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84884812152
https://doi.org/10.1109/TED.2013.2278676