المؤلفون: Yang, Feiyuan

المساهمون: Kuball, Martin, Uren, Michael

مصطلحات موضوعية: Hard-Switching, Trapping Effects, Breakdown, Gate Leakage

URL الوصول: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.856924

المؤلفون: Zhaocheng Zhang, Huajing Mo, Ruicong Li, Xinglong Zhou, Zicong Lin, Jiong Zhang, Xiufeng Tang, Yunfeng Zhan, Jianyi Luo

المصدر: Small Science, Vol 4, Iss 3, Pp n/a-n/a (2024)

مصطلحات موضوعية: amorphous tungsten oxides, electrochromics, oxygen vacancies the trapping effects, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2688-4046

URL الوصول: https://doaj.org/article/a3794db0b25243efb9792cea5eabf36a

المؤلفون: Florencio Santos, Sebastián Lorca, José Abad, Antonio J. Fernández Romero, Eduardo Laborda, Ángela Molina, Joaquín Gonzalez

مصطلحات موضوعية: Medicine, Sociology, Science Policy, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, smart surface modifiers, scientific community ’, mass transport modes, elucidate reaction mechanisms, electrical energy generation, different degrees depending, broadly used procedures, area actually available, rotating disk electrode, gc electrode modified, strong electrostatic influence, inexpensive carbon blacks, six redox solution, overall electrochemical response, trapping effects depending, among carbon nanomaterials, carbon nanomaterials, electrode nanomodifiers, electrostatic effects, carbon matrix, redox probe, employed redox, electrochemical responses, electrochemical behavior

Relation: https://figshare.com/articles/journal_contribution/Electrochemical_Behavior_of_Different_Diffusional_Redox_Probes_on_a_Porous_Acetylene_Black_Electrode_Mass_Transport_Modes_and_Electrostatic_Effects/25300967

الاتاحة: https://doi.org/10.1021/acs.jpcc.4c00165.s001
https://figshare.com/articles/journal_contribution/Electrochemical_Behavior_of_Different_Diffusional_Redox_Probes_on_a_Porous_Acetylene_Black_Electrode_Mass_Transport_Modes_and_Electrostatic_Effects/25300967

المؤلفون: Tetyorkin, V.V., Tkachuk, A.I., Lutsyshyn, I.G.

المصدر: Ukrainian Journal of Physics; Vol. 69 No. 1 (2024); 45 ; Український фізичний журнал; Том 69 № 1 (2024); 45 ; 2071-0194 ; 2071-0186 ; 10.15407/ujpe69.1

مصطلحات موضوعية: InSb, нерiвноважнi носiї, час життя, рекомбiнацiя, прилипання, iнфрачервонi фотодiоди, lifetime, recombination and trapping effects, infrared photodiodes

وصف الملف: application/pdf

Relation: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023240/3071; https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023240

الاتاحة: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023240
https://doi.org/10.15407/ujpe69.1.45

المؤلفون: Ran Ye, Xiaolong Cai, Chenglin Du, Haijun Liu, Yu Zhang, Xiangyang Duan, Jiejie Zhu

المصدر: IEEE Access, Vol 10, Pp 21759-21773 (2022)

مصطلحات موضوعية: GaN HEMT, trapping effects, current collapse, suppression methods, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9665813/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/e0fbe01cf4444cae942651d84453b8ed

المؤلفون: Alberto Vella, Giuseppe Galioto, Gianpaolo Vitale, Giuseppe Lullo, Giuseppe Costantino Giaconia

المصدر: Electronics; Volume 12; Issue 7; Pages: 1555

مصطلحات موضوعية: SiC, GaN, HEMT, embedded, measurement, high frequency, microcontroller, trapping effects, on-resistance, dynamic on-resistance, GaN/SiC device characterization

وصف الملف: application/pdf

Relation: Industrial Electronics; https://dx.doi.org/10.3390/electronics12071555

الاتاحة: https://doi.org/10.3390/electronics12071555

المؤلفون: Alessio Alemanno, Alberto Santarelli, Enrico Sangiorgi, Corrado Florian

المصدر: Electronics; Volume 12; Issue 4; Pages: 943

مصطلحات موضوعية: GaN switches, trapping effects, ON-resistance, dynamic ON-resistance, GaN device characterization, GaN power converters

وصف الملف: application/pdf

Relation: Power Electronics; https://dx.doi.org/10.3390/electronics12040943

الاتاحة: https://doi.org/10.3390/electronics12040943

المؤلفون: Alessio Alemanno, Alberto Maria Angelotti, Gian Piero Gibiino, Alberto Santarelli, Enrico Sangiorgi, Corrado Florian

المصدر: Electronics; Volume 12; Issue 4; Pages: 1063

مصطلحات موضوعية: GaN switches, trapping effects, ON-resistance, dynamic ON-resistance, GaN device characterization

وصف الملف: application/pdf

Relation: Power Electronics; https://dx.doi.org/10.3390/electronics12041063

الاتاحة: https://doi.org/10.3390/electronics12041063

المؤلفون: Pérez Martín, Elsa, Íñiguez de la Torre Mulas, Ignacio, Gaquiere, Christophe, González Sánchez, Tomás, Mateos López, Javier

مصطلحات موضوعية: Self-switching diodes, GaN, Trapping effects, Surface charge, Monte Carlo simulation

وصف الملف: application/pdf

Relation: https://doi.org/10.1063/5.0061905; SA254P18; TEC2017-83910-R; http://hdl.handle.net/10366/147185

الاتاحة: http://hdl.handle.net/10366/147185
https://doi.org/10.1063/5.0061905

المؤلفون: Pérez Martín, Elsa, González Sánchez, Tomás, Vaquero Monte, Daniel, Sánchez Martín, Héctor, Gaquiere, Christophe, Raposo Funcia, Víctor Javier, Mateos López, Javier, Íñiguez de la Torre Mulas, Ignacio

مصطلحات موضوعية: Self-switching diode, GaN, Trapping effects, Impedance measurements, Microwave detection

وصف الملف: application/pdf

Relation: https://doi.org/10.1088/1361-6528/ab9d44; TEC2017-83910-R; SA254P18; http://hdl.handle.net/10366/144049

الاتاحة: http://hdl.handle.net/10366/144049
https://doi.org/10.1088/1361-6528/ab9d44

المؤلفون: Kabouche, Riad, Abid, Idriss, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Tajalli, Alaleh, Meneghini, Matteo, Meneghesso, Gaudenzio, Medjdoub, F

المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Department of Information Engineering Padova (DEI), Università degli Studi di Padova = University of Padua (Unipd), 720527, Horizon 2020 Framework Programme, Renatech Network, PCMP CHOP, ANR-16-CE05-0022,DESTINEE,Développement de composants innovants à base de GaN sur substrat de silicium pour la future génération de composants de puissance à haut rendement(2016), European Project: 720527,H2020,H2020-NMBP-2016-two-stage,InRel-NPower(2017)

المصدر: ISSN: 0031-8965.

مصطلحات موضوعية: GaN, Silicon, Superlattice, low on-resistance, low trapping effects, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: info:eu-repo/grantAgreement//720527/EU/Innovative Reliable Nitride-based Power Devices/InRel-NPower; hal-02363323; https://hal.science/hal-02363323; https://hal.science/hal-02363323/document; https://hal.science/hal-02363323/file/pssaRiad.pdf

الاتاحة: https://hal.science/hal-02363323
https://hal.science/hal-02363323/document
https://hal.science/hal-02363323/file/pssaRiad.pdf
https://doi.org/10.1002/pssa.201900687

المؤلفون: Surya Elangovan, Stone Cheng, Edward Yi Chang

المصدر: Energies; Volume 13; Issue 10; Pages: 2628

مصطلحات موضوعية: gallium nitride HEMT, cascode configuration, off-state gate bias stress, device degradation, failure mechanisms, electronic trapping effects

وصف الملف: application/pdf

Relation: F: Electrical Engineering; https://dx.doi.org/10.3390/en13102628

الاتاحة: https://doi.org/10.3390/en13102628

المؤلفون: Cappello, Tommaso, Florian, Corrado, Santarello, Alberto, Popovic, Zoya

المصدر: Cappello , T , Florian , C , Santarello , A & Popovic , Z 2019 , Linearization of a 500-W L-band GaN Doherty Power Amplifier by Dual-Pulse Trap Characterization . in 2019 IEEE MTT-S International Microwave Symposium (IMS) Proceedings . 2019 IEEE MTT-S International Microwave Symposium (IMS) , 2/06/19 . https://doi.org/10.1109/MWSYM.2019.8700970

مصطلحات موضوعية: characterization, current collapse, digital pre distortion (DPD), Doherty power amplifier, double pulse, Gallium Nitride (GaN), linearization, pre pulse, trapping effects

وصف الملف: application/pdf

الاتاحة: https://hdl.handle.net/1983/2a7e9e17-ed66-484c-b449-6d82026f479f
https://research-information.bris.ac.uk/en/publications/2a7e9e17-ed66-484c-b449-6d82026f479f
https://doi.org/10.1109/MWSYM.2019.8700970
https://research-information.bris.ac.uk/ws/files/241036210/Linearization_of_a_500_W_L_band_GaN_Doherty_Power.pdf

المؤلفون: Bergsten, Johan

مصطلحات موضوعية: trapping effects, C-doping, AlGaN/GaN interface quality, recessed ohmic contacts, GaN HEMT, buffer design

وصف الملف: electronic

URL الوصول: https://research.chalmers.se/publication/501617
https://research.chalmers.se/publication/501617/file/501617_Fulltext.pdf

المؤلفون: Strenaer, Raphael

المساهمون: Normandie, Guhel, Yannick, Boudart, Bertrand

مصطلحات موضوعية: Transistors AlInN/GaN, Mesures électriques en régime impulsionnel, Effets de pièges électriques, Microthermomètres Raman, Mesures thermiques en régime transitoire, Caractérisation thermique, AlInN/GaN Transistors P, Photoionization, Pulsed electrical measurements, Trapping effects, Thermal characterization, Transient self-heating temperature, Raman spectroscopy, Raman microthermometers

Relation: http://www.theses.fr/2023NORMC283/document

الاتاحة: http://www.theses.fr/2023NORMC283/document

المؤلفون: Strenaer, Raphael

المساهمون: Groupe de Recherche en Informatique, Image et Instrumentation de Caen (GREYC), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS), Normandie Université, Yannick Guhel, Bertrand Boudart

المصدر: https://theses.hal.science/tel-04510757 ; Electronique. Normandie Université, 2023. Français. ⟨NNT : 2023NORMC283⟩.

مصطلحات موضوعية: AlInN/GaN Transistors P, Photoionization, Pulsed electrical measurements, Trapping effects, Thermal characterization, Transient self-heating temperature, Raman spectroscopy, Raman microthermometers, Transistors AlInN/GaN, Mesures électriques en régime impulsionnel, Effets de pièges électriques, Microthermomètres Raman, Mesures thermiques en régime transitoire, Caractérisation thermique, [SPI.TRON]Engineering Sciences [physics]/Electronics

Relation: NNT: 2023NORMC283; tel-04510757; https://theses.hal.science/tel-04510757; https://theses.hal.science/tel-04510757/document; https://theses.hal.science/tel-04510757/file/sygal_fusion_45029-strenaer-raphael_65f9561a3809f.pdf

الاتاحة: https://theses.hal.science/tel-04510757
https://theses.hal.science/tel-04510757/document
https://theses.hal.science/tel-04510757/file/sygal_fusion_45029-strenaer-raphael_65f9561a3809f.pdf

المؤلفون: Cappello, Tommaso, Santarelli, Alberto, Florian, Corrado

المساهمون: Cappello, Tommaso, Santarelli, Alberto, Florian, Corrado

مصطلحات موضوعية: Gallium nitride, Switches, HEMTs, Stress, Silicon, Probes, Degradation, Buck converter, characterization, dispersive effects, dynamic RON, GaN HEMT, pulse measurements, switching converter, trapping effects

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000422933400055; volume:33; issue:4; firstpage:3386; lastpage:3398; numberofpages:13; journal:IEEE TRANSACTIONS ON POWER ELECTRONICS; http://hdl.handle.net/11585/616494; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85040791844; http://ieeexplore.ieee.org/document/7936604

الاتاحة: http://hdl.handle.net/11585/616494
https://doi.org/10.1109/TPEL.2017.2710281
http://ieeexplore.ieee.org/document/7936604

المؤلفون: Florian, Corrado, Cappello, Tommaso, Santarello, Alberto, Niessen, Daniel, Filicori, Fabio, Popovic, Zoya

المصدر: Florian , C , Cappello , T , Santarello , A , Niessen , D , Filicori , F & Popovic , Z 2017 , ' A Prepulsing Technique for the Characterization of GaN Power Amplifiers With Dynamic Supply Under Controlled Thermal and Trapping States ' , IEEE Transactions on Microwave Theory and Techniques , vol. 65 , no. 12 , pp. 5046-5062 . https://doi.org/10.1109/TMTT.2017.2723003

مصطلحات موضوعية: amplifier measurements, envelope tracking (ET), gallium nitride (GaN), pulsed measurement, radar pulse shaping, supply modulation, trapping effects

وصف الملف: application/pdf

الاتاحة: https://hdl.handle.net/1983/c6bff99b-18dc-4249-a027-dca8e11d217d
https://research-information.bris.ac.uk/en/publications/c6bff99b-18dc-4249-a027-dca8e11d217d
https://doi.org/10.1109/TMTT.2017.2723003
https://research-information.bris.ac.uk/ws/files/241031695/A_Prepulsing_Technique_for_the_Characterizatio.pdf

المؤلفون: Nicholls, Jordan R

مصطلحات موضوعية: silicon carbide (SiC), metal���SiC interfaces, SiC Schottky diodes, SiC Ohmic, semiconductor, electron trapping effects

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e5325e8dc45f7bf456bd427ee4661bf5

المؤلفون: V. J. Raposo, Christophe Gaquiere, E. Perez-Martin, Tomas Gonzalez, Ignacio Iniguez-de-la-Torre, D. Vaquero, Javier Mateos, H. Sanchez-Martin

المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Spanish MINECO, FEDEREuropean Commission [SA254P18, TEC2017-83910-R], Junta de Castilla y LeonJunta de Castilla y Leon, Ministry of Science and Innovation (Ministry of Universities)

المصدر: Nanotechnology
Nanotechnology, Institute of Physics, 2020, 31 (40), 405204, 7 p. ⟨10.1088/1361-6528/ab9d44⟩
GREDOS. Repositorio Institucional de la Universidad de Salamanca
Universitat Politècnica de Catalunya (UPC)
Nanotechnology, 2020, 31 (40), 405204, 7 p. ⟨10.1088/1361-6528/ab9d44⟩
GREDOS: Repositorio Institucional de la Universidad de Salamanca
Universidad de Salamanca (USAL)

مصطلحات موضوعية: Imagination, Materials science, microwave detection, media_common.quotation_subject, Bioengineering, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, 7. Clean energy, Impedance measurements, GaN, Responsivity, [SPI]Engineering Sciences [physics], General Materials Science, Electrical and Electronic Engineering, Self-switching diode, Trapping effects, Electrical impedance, Diode, media_common, business.industry, Mechanical Engineering, Relaxation (NMR), impedance measurements, General Chemistry, Atmospheric temperature range, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Mechanics of Materials, Microwave detection, Optoelectronics, trapping effects, 0210 nano-technology, business, Microwave, Voltage

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cdd8a68b4b1bf98a0e0b859c789d014
https://hal.archives-ouvertes.fr/hal-03321549