المؤلفون: Vincenzo d’Alessandro, Antonio Pio Catalano, Ciro Scognamillo, Markus Müller, Michael Schröter, Peter J. Zampardi, Lorenzo Codecasa

المصدر: Electronics; Volume 12; Issue 16; Pages: 3471

مصطلحات موضوعية: bipolar transistor model, gallium arsenide (GaAs), heterojunction bipolar transistor (HBT), nonlinear thermal effects, silicon-germanium (SiGe), thermal resistance

وصف الملف: application/pdf

Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics12163471

الاتاحة: https://doi.org/10.3390/electronics12163471

المؤلفون: Sungsik Lee

المصدر: IEEE Access, Vol 9, Pp 165085-165089 (2021)

مصطلحات موضوعية: Amorphous oxide semiconductor, thin film transistor, contact resistance, bias and temperature dependencies, parasitic element, compact transistor model, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9648159/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/c5cf7d6b0cae4bf4a0577e4ba5bc20ae

المؤلفون: Alka Singh, Tomoki Nishimura, Hiroaki Satoh, Hiroshi Inokawa

المصدر: Applied Sciences; Volume 12; Issue 16; Pages: 8139

مصطلحات موضوعية: single-electron transistor model, time-dependent master equation, input capacitance, transcapacitance, SPICE circuit simulator

جغرافية الموضوع: agris

وصف الملف: application/pdf

Relation: Quantum Science and Technology; https://dx.doi.org/10.3390/app12168139

الاتاحة: https://doi.org/10.3390/app12168139

المؤلفون: Vincenzo d’Alessandro, Antonio Pio Catalano, Ciro Scognamillo, Markus Müller, Michael Schröter, Peter J. Zampardi, Lorenzo Codecasa

المصدر: Energies; Volume 15; Issue 15; Pages: 5457

مصطلحات موضوعية: compact transistor model, finite-element method (FEM), gallium arsenide (GaAs), heterojunction bipolar transistor (HBT), nonlinear thermal effects, silicon-germanium (SiGe), thermal resistance

وصف الملف: application/pdf

Relation: F: Electrical Engineering; https://dx.doi.org/10.3390/en15155457

الاتاحة: https://doi.org/10.3390/en15155457

المؤلفون: Filanovsky, I. M., Oliveira, L. B., Tchamov, N. T.

المساهمون: DEE2010-A2 Electrónica, CTS - Centro de Tecnologia e Sistemas, DEE - Departamento de Engenharia Electrotécnica e de Computadores, UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias, RUN

مصطلحات موضوعية: distortion harmonics, low-distortion amplifiers, low-voltage amplifiers, moderate inversion, MOS transistor model, strong saturation, Electrical and Electronic Engineering

وصف الملف: application/pdf

Relation: 9781538648810; 0271-4302; PURE: 10570965; http://www.scopus.com/inward/record.url?scp=85057078456&partnerID=8YFLogxK

المؤلفون: Sungsik Lee

المصدر: Membranes; Volume 11; Issue 12; Pages: 954

مصطلحات موضوعية: amorphous oxide semiconductor, thin-film transistor, degree of disorder, bias-dependent contact resistance, compact transistor model, empirical modeling, transfer characteristics

وصف الملف: application/pdf

Relation: Inorganic Membranes; https://dx.doi.org/10.3390/membranes11120954

الاتاحة: https://doi.org/10.3390/membranes11120954

المؤلفون: Yapei Chen, Yong Zhang, Yuehang Xu, Yan Sun, Wei Cheng, Haiyan Lu, Fei Xiao, Ruimin Xu

المصدر: IEEE Access, Vol 6, Pp 45772-45781 (2018)

مصطلحات موضوعية: InP HBT, terahertz band, 3D EM simulation, transistor model, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8438870/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/829a230d80db48f59b41c5d297fa7f22

المؤلفون: Kouhalvandi L., Catoggio E., Guerrieri S.D.

مصطلحات موضوعية: Deep neural network (DNN), fin field-effect transistor (FinFET), large-signal modeling, long short-term memory (LSTM), predict, X-parameter, Brain, Circuit simulation, Deep neural networks, Electronic design automation, FinFET, Fins (heat exchange), Integrated circuit manufacture, Communications systems, Deep neural network, Fin field-effect transistor, Fin field-effect transistors, Large signal models, Large-signals, Long short-term memory, Transistor model, X-parameters

Relation: EUROCON 2023 - 20th International Conference on Smart Technologies, Proceedings; Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı; https://doi.org/10.1109/EUROCON56442.2023.10198982; https://hdl.handle.net/11376/4281; 542; 546; 2-s2.0-85168698093

الاتاحة: https://doi.org/10.1109/EUROCON56442.2023.10198982
https://hdl.handle.net/11376/4281

المؤلفون: Romero Cáceres, Adrián, González Peñalver, Jesús, M. Jamal, Deen, Jiménez Tejada, Juan Antonio

مصطلحات موضوعية: Organic thin-film transistor (OTFT), Transistor model, Contact effects, Parameter extraction, Multi-objective optimization, Evolutionary algorithms, Ammonia sensor

Relation: A. Romero, J. González, M.J. Deen, J.A. Jiménez-Tejada, Versatile model for the contact region of organic thin-film transistors, Organic Electronics, (2020), 77, 105523.; http://hdl.handle.net/10481/60176

الاتاحة: http://hdl.handle.net/10481/60176
https://doi.org/10.1016/j.orgel.2019.105523

المؤلفون: Filanovsky, Igor M., Oliveira, Luis B., Tchamov, Nikolay T.

المساهمون: DEE2010-A2 Electrónica, CTS - Centro de Tecnologia e Sistemas, UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias, DEE - Departamento de Engenharia Electrotécnica e de Computadores

مصطلحات موضوعية: drain current harmonics, low-distortion/low-voltage amplifier, moderate inversion, MOS transistor model, saturation, Electrical and Electronic Engineering

Relation: PURE: 13106549; PURE UUID: 9e161f82-a4e7-4a10-b7e4-60ee11108678; Scopus: 85064656552; WOS: 000465305700022; http://hdl.handle.net/10362/93391; https://doi.org/10.1109/TCSI.2018.2885166

الاتاحة: http://hdl.handle.net/10362/93391
https://doi.org/10.1109/TCSI.2018.2885166

المؤلفون: Markus Krammer, James Borchert, Andreas Petritz, Esther Karner-Petritz, Gerburg Schider, Barbara Stadlober, Hagen Klauk, Karin Zojer

المصدر: Crystals; Volume 9; Issue 2; Pages: 85

مصطلحات موضوعية: organic thin-film transistor, transistor model evaluation, channel-length dependence, contact resistances, modeling contact effects, equivalent circuit, charge-carrier-mobility extraction

وصف الملف: application/pdf

Relation: Inorganic Crystalline Materials; https://dx.doi.org/10.3390/cryst9020085

الاتاحة: https://doi.org/10.3390/cryst9020085

المؤلفون: Düdük, Niyazi, Tola, Abdullah T.

مصطلحات موضوعية: SPICE, Circuit synthesis, Current sources, Electronically tunable, Lossy integrators, P-Spice simulation, State space synthesis, Bandpass filters, Biomedical engineering, Electric filters, Electronic medical equipment, Transistor model, Translinear principle, Notch filters

Relation: Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı; https://hdl.handle.net/11499/9108; 427; 431; WOS:000401519800081

الاتاحة: https://hdl.handle.net/11499/9108

المؤلفون: Lihong Zhang, Zhenxin Zhao

المصدر: IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 29:1824-1837

مصطلحات موضوعية: Transistor model, Operating point, Computer science, Overhead (engineering), Semiconductor device modeling, 02 engineering and technology, Symbolic data analysis, 020202 computer hardware & architecture, Data modeling, Computer Science::Hardware Architecture, Computer Science::Emerging Technologies, Computer engineering, CMOS, Hardware and Architecture, 0202 electrical engineering, electronic engineering, information engineering, Netlist, Electrical and Electronic Engineering, Software, Hardware_LOGICDESIGN

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0af49466f13740ee1186546eded4925c
https://doi.org/10.1109/tvlsi.2021.3107404

المؤلفون: Esteban Garzon, Yosi Greenblatt, Odem Harel, Adam Teman, Marco Lanuzza

المصدر: IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 29:1319-1324

مصطلحات موضوعية: Transistor model, Dynamic random-access memory, Hardware_MEMORYSTRUCTURES, Computer science, Transistor, Cryogenics, law.invention, Hardware and Architecture, law, MOSFET, Electronic engineering, Static random-access memory, Electrical and Electronic Engineering, Software, Dram, Electronic circuit

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::66089a774b09e4f9f4bcd26a0d62f1b0
https://doi.org/10.1109/tvlsi.2021.3081043

المؤلفون: Daniel Nahra, Ben Roter, Matthew Lacek, Kye-Shin Lee

المصدر: Journal of Multimedia Information System. 8:143-146

مصطلحات موضوعية: Transistor model, Scheme (programming language), law, Computer science, Electronic engineering, Biasing, Integrated circuit, computer, law.invention, computer.programming_language

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::fbe5406e19896b0cec9998dec5e4b285
https://doi.org/10.33851/jmis.2021.8.2.143

المؤلفون: Taylor W. Barton, Daniel N. Martin

المصدر: IEEE Transactions on Microwave Theory and Techniques. 69:1661-1674

مصطلحات موضوعية: Transistor model, Radiation, Materials science, Amplifier, Transistor, Linearity, 020206 networking & telecommunications, 02 engineering and technology, Condensed Matter Physics, Power (physics), law.invention, law, 0202 electrical engineering, electronic engineering, information engineering, Adjacent channel, Electronic engineering, Electrical and Electronic Engineering, Resistor, Monolithic microwave integrated circuit

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::37b9f40463d2e48fef95492a011154f6
https://doi.org/10.1109/tmtt.2021.3052798

المؤلفون: Dang-An Nguyen, Chulhun Seo

المصدر: IEEE Access, Vol 9, Pp 99562-99570 (2021)

مصطلحات موضوعية: JFET, Transistor model, Materials science, colpitt and clapp VCOs, General Computer Science, General Engineering, Inductor, Capacitance, TK1-9971, law.invention, Capacitor, Voltage-controlled oscillator, law, negative impedance inverter, negative resistance, Phase noise, Electronic engineering, General Materials Science, Electrical engineering. Electronics. Nuclear engineering, Varicap, non-foster capacitor, Negative impedance converter

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cb6dfc7d167bc9227a5433ab8f775a4
https://doi.org/10.1109/access.2021.3096187

المؤلفون: Lingling Sun, Jialin Cai, Chao Yu, Justin B. King, Qiangqiang Xie, Shichang Chen

المصدر: IEEE Transactions on Microwave Theory and Techniques. 68:5042-5054

مصطلحات موضوعية: Transistor model, Physics, Radiation, Admittance, Frequency band, Smith chart, 020206 networking & telecommunications, 02 engineering and technology, Domain model, Condensed Matter Physics, Topology, Piecewise linear function, Frequency domain, 0202 electrical engineering, electronic engineering, information engineering, Time domain, Electrical and Electronic Engineering

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c07066e4d633fc141f8b75e7feb3dde3
https://doi.org/10.1109/tmtt.2020.3021696

المؤلفون: Shi-Wei Dong, Ying Wang, Xumin Yu, Shuo Zhang, Songbai He, Fei You

المصدر: IEEE Transactions on Microwave Theory and Techniques. 68:4433-4444

مصطلحات موضوعية: Transistor model, Physics, Radiation, Amplifier, Transistor, 020206 networking & telecommunications, 02 engineering and technology, Condensed Matter Physics, Topology, law.invention, Harmonic analysis, Rectifier, Rectification, law, 0202 electrical engineering, electronic engineering, information engineering, Harmonic, Waveform, Electrical and Electronic Engineering

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::43f73384315e30ebcace71fbfcd802e7
https://doi.org/10.1109/tmtt.2020.2995808

المؤلفون: Mustafa Berke Yelten, Batuhan Doğan, Halil Ibrahim Kayihan, Benan Beril Inam

المصدر: Analog Integrated Circuits and Signal Processing. 106:501-510

مصطلحات موضوعية: Transistor model, Materials science, business.industry, 020208 electrical & electronic engineering, Dropout (communications), Regulator, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, Voltage regulator, Atmospheric temperature range, Surfaces, Coatings and Films, CMOS, Hardware and Architecture, Dropout voltage, Signal Processing, 0202 electrical engineering, electronic engineering, information engineering, business, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6596ef9b459d3c93781465c9267f3da5
https://doi.org/10.1007/s10470-020-01715-9