المؤلفون: Aleksandar Živković (11113042), Giuseppe Mallia (1563061), Helen E. King (1445746), Nora H. de Leeuw (7125692), Nicholas M. Harrison (1478359)

مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, time preventing recombination, stable manufacturing process, recombination effects competing, interstitial oxygen defects, expected output photocurrent, new electronic states, like electronic states, improved charged separation, epitaxially aligned cuo, strained cu –, thus would limit, electron transfer across, 2 , 2 +, suitable band bending, band gap tunability, cuo surface cu, inefficient charge transport, charge separation, band bending, electronic structure, hole transfer, efficient electron, valence band

Relation: https://figshare.com/articles/journal_contribution/Mind_the_Interface_Gap_Exposing_Hidden_Interface_Defects_at_the_Epitaxial_Heterostructure_between_CuO_and_Cu_sub_2_sub_O/21698007

الاتاحة: https://doi.org/10.1021/acsami.2c16889.s001