المؤلفون: Jingyuan Cui, Kai‐Xuan Zhang, Je‐Geun Park

المصدر: Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024)

مصطلحات موضوعية: spintronics, three‐terminal SOT‐MRAM, topological layered ferromagnet Fe3GeTe2 (FGT), van der Waals magnetic tunneling junction, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/5b245f2d838f49d0898b35f5154c71a3