المؤلفون: Dr. Ritu Agarwal

المصدر: International Journal of Research and Analysis in Science and Engineering; Vol. 3 No. 5 (2023); 6 ; 2582-8118

مصطلحات موضوعية: CZ- Silicon, Thermal donor, New donor, interstitial oxygen, substitutional carbon

وصف الملف: application/pdf

Relation: https://www.iarj.in/index.php/ijrase/article/view/235/278; https://www.iarj.in/index.php/ijrase/article/view/235

الاتاحة: https://www.iarj.in/index.php/ijrase/article/view/235

المؤلفون: Gentile, Francesco, Platonenko, Alexander, El-Kelany, Khaled, Rérat, Michel, d'Arco, Philippe, Dovesi, Roberto

المساهمون: Istituto Nazionale di Oceanografia e di Geofisica Sperimentale (OGS), Institute of Solid State Physics, University of Latvia (LU), Kafrelsheikh University, Institute of Nanoscience and Nanotechnology Kafrelsheikh, Kafrelskeikh University, Institut des sciences analytiques et de physico-chimie pour l'environnement et les materiaux (IPREM), Université de Pau et des Pays de l'Adour (UPPA)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS), Pétrologie, géochimie, minéralogie magmatiques (ISTEP-PGM2), Institut des Sciences de la Terre de Paris (iSTeP), Institut national des sciences de l'Univers (INSU - CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences de l'Univers (INSU - CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Institut national des sciences de l'Univers (INSU - CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Dipartimento di Chimica IFM and NIS, Università degli studi di Torino = University of Turin (UNITO)

المصدر: ISSN: 0192-8651.

مصطلحات موضوعية: IR and Raman spectra, silicon, substitutional carbon defec, ab initio calculation, [CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry

Relation: hal-02540365; https://hal.science/hal-02540365; https://hal.science/hal-02540365/document; https://hal.science/hal-02540365/file/2020_JComputChem_41_1638_Gentile.pdf

الاتاحة: https://hal.science/hal-02540365
https://hal.science/hal-02540365/document
https://hal.science/hal-02540365/file/2020_JComputChem_41_1638_Gentile.pdf
https://doi.org/10.1002/jcc.26206

المؤلفون: Daiki Tsuchiya, Hidekazu Yamamoto, Koji Sueoka, 土屋 大輝, 山本 秀和, 末岡 浩治

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3306

المؤلفون: DE SALVADOR, DAVIDE, BERTI, MARINA, ROMANATO, FILIPPO, NAPOLITANI, ENRICO, DRIGO, ANTONIO, M. Petrovich, J. Stangl, S. Zerlauth, M. Mulhberger, F. Schaffler, G. Bauer, P. C. Kelires

المساهمون: DE SALVADOR, Davide, M., Petrovich, Berti, Marina, Romanato, Filippo, Napolitani, Enrico, Drigo, Antonio, J., Stangl, S., Zerlauth, M., Mulhberger, F., Schaffler, G., Bauer, P. C., Kelires

مصطلحات موضوعية: SUBSTITUTIONAL CARBON INCORPORATION, MOLECULAR-BEAM EPITAXY, MONTE-CARLO, thermal stability, SI1-YCY ALLOYS, PHASE-DIAGRAM

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000087159100083; volume:61; issue:19; firstpage:13005; lastpage:13013; numberofpages:9; journal:PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS; http://hdl.handle.net/11577/1334737

الاتاحة: http://hdl.handle.net/11577/1334737
https://doi.org/10.1103/PhysRevB.61.13005

المؤلفون: Katsuya NOZAWA, Minoru KUBO, Tohru SAITOH, Yoshihiko KANZAWA, 久保 実, 神澤 好彦, 能澤 克弥, 齋藤 徹

المصدر: 応用物理 / OYOBUTURI. 2000, 69(12):1450

المؤلفون: Han Xu

المصدر: Energy Procedia. 77:658-664

مصطلحات موضوعية: Materials science, Interstitial oxygen, Resistivity, Metallurgy, Energy conversion efficiency, Continuous Cz, Crucible, chemistry.chemical_element, Carrier lifetime, Substitutional carbon, n-Pasha, Minority carrier lifetime, Energy(all), chemistry, Electrical resistivity and conductivity, Wafer, Crystalline silicon, Mono-crystalline, Ingot, nPERT, Carbon, n-type

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5447e4bc8069b601cf0ee48d048e076e
https://doi.org/10.1016/j.egypro.2015.07.095

المؤلفون: Ouma, C.N.M., Meyer, Walter Ernst

مصطلحات موضوعية: Carbon-substitutional–carbon-interstitial (CsCi), Silicon, Defects, Semiconductors, Metastability, Density functional theory (DFT)

وصف الملف: application/pdf

Relation: Ouma, CNM & Meyer, WE 2016, 'The carbon-substitutional-carbon-interstitial (CsCi) defect pair in silicon from hybrid functional calculations', Computational Materials Science, vol. 118, pp. 228-241.; 0927-0256 (print); 1879-0801 (online); http://hdl.handle.net/2263/53099

الاتاحة: http://hdl.handle.net/2263/53099
https://doi.org/10.1016/j.commatsci.2016.03.033

المؤلفون: Tatiana S. Perova, F. Meyer, J. Wasyluk

المصدر: Thin Solid Films. 518:S151-S153

مصطلحات موضوعية: Silicon, Metals and Alloys, Analytical chemistry, chemistry.chemical_element, Germanium, Surfaces and Interfaces, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, symbols.namesake, chemistry, Molecular vibration, Thermal, Materials Chemistry, symbols, Raman spectroscopy, SiGeC layer, stress analysis, substitutional carbon, Thin film, Carbon, Raman scattering

وصف الملف: 104617 bytes; application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7df9e53c133aca4c9ec3da5877524315
https://doi.org/10.1016/j.tsf.2009.10.076

المؤلفون: Vaughan, Martin P., Murphy-Armando, Felipe, Fahy, Stephen B.

مصطلحات موضوعية: SI1-YCY, Substitutional-carbon pair, Quasi-Newton methods, Interstitial carbon, Pressure coefficients, Band-gaps, Silicon, Resistivity, Transport, Defects

وصف الملف: application/pdf

Relation: 165209; VAUGHAN, M. P., MURPHY-ARMANDO, F. & FAHY, S. 2012. 'First-principles investigation of the alloy scattering potential in dilute Si1-xCx'. Physical Review B, 85, 165209. doi:10.1103/PhysRevB.85.165209; 165209-10; Physical Review B; 165209-1; http://hdl.handle.net/10468/2676; 85

الاتاحة: http://hdl.handle.net/10468/2676
https://doi.org/10.1103/PhysRevB.85.165209

المؤلفون: Stephen Fahy, Martin P Vaughan, Felipe Murphy-Armando

مصطلحات موضوعية: Silicon, Materials science, Condensed matter physics, Band gap, SI1-YCY, Resistivity, chemistry.chemical_element, Transport, Band-gaps, Condensed Matter Physics, Pressure coefficients, Substitutional-carbon pair, Electronic, Optical and Magnetic Materials, Alloy scattering, chemistry, Electrical resistivity and conductivity, Interstitial carbon, Quasi-Newton methods, Defects

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::512619cdbd134d46474925e3ee767a39
https://hdl.handle.net/10468/2676

المؤلفون: CHOI KYU JIN

المساهمون: ELECTRICAL & COMPUTER ENGINEERING, CHO BYUNG-JIN

مصطلحات موضوعية: SiGe, SiC, SiGeC, Epitaxy, Critical thickness, Substitutional carbon

Relation: CHOI KYU JIN (2008-11-17). Selective EPI process for advanced CMOS devices. ScholarBank@NUS Repository.; http://scholarbank.nus.edu.sg/handle/10635/15977; NOT_IN_WOS

الاتاحة: http://scholarbank.nus.edu.sg/handle/10635/15977

المؤلفون: Davide De Salvador, Petrovich, M., Berti, M., Romanato, F., Napolitani, E., Drigo, A., Stangl, J., Zerlauth, S., Mühlberger, M., Schäffler, F., Bauer, G., Kelires, P. C.

المصدر: Scopus-Elsevier

مصطلحات موضوعية: MONTE-CARLO, MOLECULAR-BEAM EPITAXY, PHASE-DIAGRAM, SUBSTITUTIONAL CARBON INCORPORATION, thermal stability, SI1-YCY ALLOYS

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b611eccfd9ba0021b9f01ced3a289769
http://www.scopus.com/inward/record.url?eid=2-s2.0-18244375862&partnerID=MN8TOARS

المؤلفون: Gareso, Paulus, Buda, Manuela, Petravic, Mladen, Jagadish, Chennupati, Tan, Hark Hoe

المصدر: Journal of the Electrochemical Society

مصطلحات الفهرس: Keywords: Annealing; Atomization; Capacitance measurement; Carrier concentration; Doping (additives); Electrochemistry; Semiconducting indium gallium arsenide; Voltage measurement; Zinc; Substitutional carbon; Thermal annealing; X-ray rocking curve; Zinc acceptors, Journal article

URL: http://hdl.handle.net/1885/70541