المؤلفون: Min-Kyu Park, Joon Hwang, Soomin Kim, Wonjun Shin, Wonbo Shim, Jong-Ho Bae, Jong-Ho Lee, Seongjae Cho

المصدر: Scientific Reports, Vol 14, Iss 1, Pp 1-14 (2024)

مصطلحات موضوعية: Processing-in-memory (PIM), Memory wall, Charge-trap flash, poly-Si channel, Inference, Hardware neural network, Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/bb1c02645a3345f4bb1bfeed1e7d93b5

المؤلفون: Eunseok Oh, Hyungcheol Shin

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 934-940 (2024)

مصطلحات موضوعية: 3-DNAND flash memory, random telegraph noise (RTN), polycrystalline Si (poly Si) channel, macaroni MOSFETs, artificial neural network (ANN), machine learning (ML), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10702511/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/602e638e32ee4f60862509ba64b886d9

المؤلفون: Jae-Min Sim, Su-Hwan Choi, Seong-Hwan Ryu, Ji-Ho Song, Jin-Seong Park, Yun-Heub Song

مصطلحات موضوعية: Biophysics, Space Science, Biological Sciences not elsewhere classified, Information Systems not elsewhere classified, – v curve, indium gallium oxide, 15 na ), effect transistor devices, simulation results demonstrate, achieve high mobility, proposed hc structure, gidl erase operation, si channel characteristics, high mobility, effect mobility, compatible characteristics, percolation effect, si channel, hybrid channel, thereby improving, oxygen vacancies, gidl erase, channels coexist, additional formation, 78 cm

Relation: https://figshare.com/articles/journal_contribution/High_Mobility_and_GIDL_Erase-Compatible_Characteristics_in_Hybrid_Channel_Poly-Si_IGO_for_Ultrahigh_3D_NAND_Flash_Memory_Applications/25062686

الاتاحة: https://doi.org/10.1021/acsaelm.3c01501.s001
https://figshare.com/articles/journal_contribution/High_Mobility_and_GIDL_Erase-Compatible_Characteristics_in_Hybrid_Channel_Poly-Si_IGO_for_Ultrahigh_3D_NAND_Flash_Memory_Applications/25062686

المؤلفون: Hala A. Naman, A.E. Abdelkareem

المصدر: Iraqi Journal of Information & Communication Technology, Vol 6, Iss 2 (2023)

مصطلحات موضوعية: Self-interference cancellation, In-Band Full-duplex, SI channel model, Underwater acoustic communication., Information technology, T58.5-58.64

وصف الملف: electronic resource

Relation: https://ijict.edu.iq/index.php/ijict/article/view/210; https://doaj.org/toc/2222-758X; https://doaj.org/toc/2789-7362

URL الوصول: https://doaj.org/article/cac523d8761445e68990fa72b213a819

المؤلفون: Inyoung Lee, Dae Hwan Kim, Daewoong Kang, Il Hwan Cho

المصدر: IEEE Access, Vol 10, Pp 108067-108074 (2022)

مصطلحات موضوعية: 3D NAND, electron back tunneling, poly-Si channel, wave-shaped channel, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9912418/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/4cbebd8df19c49149bcb732a8087ba1f

المؤلفون: Ukju An, Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jongwoo Kim, Jeong-Soo Lee

المصدر: Micromachines, Vol 14, Iss 12, p 2199 (2023)

مصطلحات موضوعية: 3-D NAND flash memory, cross-temperature, threshold voltage variation, decomposition, poly-Si channel, grain boundary, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/14/12/2199; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/916f84299e074bf8b253c9c6b0aea724

المؤلفون: Amika Shima, Kei Watanabe, Yutaka Fukushima, 志摩 会実佳, 渡辺 圭, 福嶌 豊

المصدر: JSAP Annual Meetings Extended Abstracts. 2017, :73

المؤلفون: Hanpei Koike, Hiroshi Fuketa, Junichi Tsukada, Meishoku Masahara, Shinichi Ouchi, Shinji Migita, Tadashi Nakagawa, Takahiro Mori, Takashi Matsukawa, Toshifumi Irisawa, Yohei Hori, Yongxun Liu, Yukinori Morita, 中川 格, 入沢 寿史, 右田 真司, 堀 洋平, 塚田 順一, 大内 真一, 小池 汎平, 昌原 明植, 更田 裕司, 松川 貴, 柳 永勛, 森 貴洋, 森田 行則

المصدر: JSAP Annual Meetings Extended Abstracts. 2016, :3021

المساهمون: Baca, Albert [Albuquerque, NM]

وصف الملف: Medium: ED

URL الوصول: http://www.osti.gov/scitech/servlets/purl/873071

المؤلفون: Yongxun Liu, 亀井 貴弘, 坂本 邦博, 塚田 順一, 大内 真一, 小椋 厚志, 山内 洋美, 昌原 明植, 松川 貴, 林田 哲郎, 石川 由紀, 遠藤 和彦

المصدر: JSAP Annual Meetings Extended Abstracts. 2012, :2798

المؤلفون: Kim, J, Rim, T, Lee, J, Baek, CK, Meyyappan, M, LEE, JEONG SOO

المساهمون: 정보전자융합공학부, 10084860, Baek, CK, LEE, JEONG SOO

مصطلحات موضوعية: Grain boundary (GB), poly-silicon (poly-Si) channel, threshold voltage variation

Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES; 61; 2705; 2710; SCI; Engineering, Electrical & Electronic; Physics, Applied; Engineering; Physics; 2014-OAK-0000030231; https://oasis.postech.ac.kr/handle/2014.oak/27281; 16764; IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.8, pp.2705 - 2710; 000342906200014; 2-s2.0-84905243124

الاتاحة: https://oasis.postech.ac.kr/handle/2014.oak/27281
https://doi.org/10.1109/TED.2014.2329848

المؤلفون: Bensegueni, Rachida, Latreche, Saida

مصطلحات موضوعية: Microelectronic, down-scaling, strained Si channel, high-k dielectric, mobility, gate leakage currents, direct tunneling current, Microélectronique, miniaturisation, MOSFET, Silicium contraint, diélectrique haute permittivité, mobilité, courants de fuites, courant tunnel direct, الالكترونيات الدقيقة, التصغير, السيليكون المتوترة ثنائية المحور, العازل عالي السماحية, التىقل الالكتروني, التسربات, تيار تونال, Semi-conducteurs

وصف الملف: application/pdf

Relation: http://depot.umc.edu.dz/handle/123456789/5710

الاتاحة: http://depot.umc.edu.dz/handle/123456789/5710