المؤلفون: Liu Z (Liu, Zhi), Hu WX (Hu, Weixuan), Li C (Li, Chong), Li YM (Li, Yaming), Xue CL (Xue, Chunlai), Li CB (Li, Chuanbo), Zuo YH (Zuo, Yuhua), Cheng BW (Cheng, Buwen), Wang QM (Wang, Qiming)

مصطلحات موضوعية: Light-emitting-diodes, Ge, Si, Silicon, Gain, Gap, 光电子学, light emitting diodes, germanium, metric system, leds (light emitting diodes), led, organic light emitting diodes, oled, polymer led, superluminescent diodes, led (diodes), light-emitting diodes, leds, organic led, light emitting diode, germanium (deutsch), germanium (francais), international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium

Relation: APPLIED PHYSICS LETTERS; Liu Z (Liu, Zhi); Hu WX (Hu, Weixuan); Li C (Li, Chong); Li YM (Li, Yaming); Xue CL (Xue, Chunlai); Li CB (Li, Chuanbo); Zuo YH (Zuo, Yuhua); Cheng BW (Cheng, Buwen); Wang QM (Wang, Qiming) .Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells .APPLIED PHYSICS LETTERS,2012,101(23):231108; http://ir.semi.ac.cn/handle/172111/23739

الاتاحة: http://ir.semi.ac.cn/handle/172111/23739

المؤلفون: Jia L (Jia Lianxi), Geng MM (Geng Minming), Zhang L (Zhang Lei), Yang L (Yang Lin), Chen P (Chen Ping), Liu YL (Liu Yuliang), Jia, L, Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China. 电子邮箱地址: jialx@semi.ac.cn

مصطلحات موضوعية: Group-velocity Dispersion, Wavelength Conversion, On-insulator, Photonic Wires, Si, Propagation, Generation, Roughness, Index, Chip, 光电子学, group velocity dispersion, metric system, silicon, reproduction, finishing, indexes, microprocessors, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium, sudden impulse, systeme international, state interaction method, stieltje imaging, spherical interaction approximation

Relation: CHINESE OPTICS LETTERS; Jia L (Jia Lianxi), Geng MM (Geng Minming), Zhang L (Zhang Lei), Yang L (Yang Lin), Chen P (Chen Ping), Liu YL (Liu Yuliang).Dispersion characteristics of nanometer-scaled silicon rib waveguides.CHINESE OPTICS LETTERS,2010,8(5):485-489; http://ir.semi.ac.cn/handle/172111/11279

الاتاحة: http://ir.semi.ac.cn/handle/172111/11279

المؤلفون: Zheng J, Ding WC, Xue CL, Zuo YH, Cheng BW, Yu JZ, Wang QM, Wang GL, Guo HQ, Zheng, J, Chinese Acad Sci, Inst Semicond, Stare Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: zhengjun@semi.ac.cn

مصطلحات موضوعية: Erbium Silicate, Photoluminescence, Si Photonics, Wave-guide Amplifiers, Crystalline Films, Energy-transfer, Si, Er3++, Excitation, 光电子学, energy transfer, metric system, silicon, bombardment, 光致发光, 能量传递, heat transfer, energy flux, 能流, energy exchange, transfer of properties, 能量交换, 能量传输, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium

Relation: JOURNAL OF LUMINESCENCE; Zheng J, Ding WC, Xue CL, Zuo YH, Cheng BW, Yu JZ, Wang QM, Wang GL, Guo HQ.Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method.JOURNAL OF LUMINESCENCE,2010,130(3):411-414; http://ir.semi.ac.cn/handle/172111/10216

الاتاحة: http://ir.semi.ac.cn/handle/172111/10216

المؤلفون: Wang XX, Zhang JG, Cheng BW, Yu JZ, Wang QM, Wang, XX, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: wangxiaoxin@red.semi.ac.cn

مصطلحات موضوعية: Silicon Nanocrystals, Si, Photoluminescence, Evolution, 半导体物理, metric system, silicon, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium, sudden impulse, systeme international, state interaction method, stieltje imaging, spherical interaction approximation, 光致发光, gene flow, degagement, umwaelzung, biological evolution, bioevolution, convergent evolution, evolution (organisms), natural selection, biogenesis

Relation: CHINESE PHYSICS LETTERS; Wang XX; Zhang JG; Cheng BW; Yu JZ; Wang QM .Electroluminescence afterglow from indium tin oxide/Si-rich SiO2/p-Si structure ,CHINESE PHYSICS LETTERS,2006,23(5):1306-1309; http://ir.semi.ac.cn/handle/172111/10678

الاتاحة: http://ir.semi.ac.cn/handle/172111/10678

المؤلفون: Zhao HQ (Zhao Hong-Quan), Yu LJ (Yu Li-Juan), Huang YZ (Huang Yong-Zhen), Wang YT (Wang Yu-Tian), Zhao, HQ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: zhggeneral@red.semi.ac.cn

مصطلحات موضوعية: Inp, Si, X-ray Double Crystalline Diffraction, Thermal Strain, Wafer Bonding, Optoelectronic Devices, Epitaxial Overgrowths, Temperature, Interface, Stresses, Vcsels, Surfaces, Energy, 光电子学, metric system, silicon, lithography, electron beam, residual stresses, photoelasticity, thermal stresses, water-power, force and energy, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium

Relation: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY; Zhao HQ (Zhao Hong-Quan); Yu LJ (Yu Li-Juan); Huang YZ (Huang Yong-Zhen); Wang YT (Wang Yu-Tian) .Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction ,MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2006 ,133(1-3):117-123; http://ir.semi.ac.cn/handle/172111/10394

الاتاحة: http://ir.semi.ac.cn/handle/172111/10394

المؤلفون: Zhang S (Zhang S.), Liao X (Liao X.), Raniero L (Raniero L.), Fortunato E (Fortunato E.), Xu Y (Xu Y.), Kong G (Kong G.), Aguas H (Aguas H.), Ferreira I (Ferreira I.), Martins R (Martins R.), Zhang, S, New Univ Lisbon, Fac Sci & Technol, CENIMAT, Dept Mat Sci, P-2829516 Caparica, Portugal. E-mail: sz@uninova.pt

مصطلحات موضوعية: Silicon, Thin Film, Solar Cell, Hydrogenated Amorphous-silicon, Si, Microstructure, 半导体材料, metric system, silicium, silizium, sudden impulse, systeme international, state interaction method, stieltje imaging, spherical interaction approximation, 太阳能电池, international metric system, international system of units, si (weights and measures), si-metric, metric unit, 微结构, micromorphology, oceanic microstructure

Relation: SOLAR ENERGY MATERIALS AND SOLAR CELLS; Zhang S (Zhang S.); Liao X (Liao X.); Raniero L (Raniero L.); Fortunato E (Fortunato E.); Xu Y (Xu Y.); Kong G (Kong G.); Aguas H (Aguas H.); Ferreira I (Ferreira I.); Martins R (Martins R.) .Silicon thin films prepared in the transition region and their use in solar cells ,SOLAR ENERGY MATERIALS AND SOLAR CELLS,2006 ,90(18-19):3001-3008; http://ir.semi.ac.cn/handle/172111/10374

الاتاحة: http://ir.semi.ac.cn/handle/172111/10374

المؤلفون: Zhou JP, Chai CL, Yang SY, Liu ZK, Song SL, Chen NF, Lin LY, Zhou JP,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Interfacial Layer Formation, Gate Dielectrics Gd2o3, Ion-beam, Temperature-dependence, Silicon, Si, Gaas(100), Constants, Europium, Yttrium, 半导体物理, ion beam, temperature dependence, metric system, avogadro constant, bore, 离子束, silicium, silizium, sudden impulse, systeme international, state interaction method, stieltje imaging, spherical interaction approximation, international metric system, international system of units, si (weights and measures), si-metric, metric unit, 引力常量

Relation: JOURNAL OF APPLIED PHYSICS; Zhou JP; Chai CL; Yang SY; Liu ZK; Song SL; Chen NF; Lin LY .Photoluminescence behaviors from stoichiometric gadolinium oxide films ,JOURNAL OF APPLIED PHYSICS,2003,94 (7):4414-4419; http://ir.semi.ac.cn/handle/172111/11448

الاتاحة: http://ir.semi.ac.cn/handle/172111/11448

المؤلفون: Zhang ZC, Chen YH, Yang SY, Zhang FQ, Ma BS, Xu B, Zeng YP, Wang ZG, Zhang XP, Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Relaxation, Si, Heterostructures, Kinetics, 半导体材料, metric system, silicon, dynamics, 松弛, chemical relaxation, 弛豫[作用], international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium, sudden impulse, systeme international, state interaction method, stieltje imaging, spherical interaction approximation, 动力学, dynamical systems, motion, mechanics, analytic, analytical mechanics, robot dynamics

Relation: SEMICONDUCTOR SCIENCE AND TECHNOLOGY; Zhang ZC; Chen YH; Yang SY; Zhang FQ; Ma BS; Xu B; Zeng YP; Wang ZG; Zhang XP .Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2003 ,18 (11):955-959; http://ir.semi.ac.cn/handle/172111/11382

الاتاحة: http://ir.semi.ac.cn/handle/172111/11382

المؤلفون: Huang CJ, Tang Y, Li DZ, Cheng BW, Luo LP, Yu JZ, Wang QM, Huang CJ,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China. 电子邮箱地址: cjhuang@red.semi.ac.cn

مصطلحات موضوعية: Stranski-krastanov Growth, Si/si1-xgex Quantum-wells, Ii Band Alignment, Photoluminescence, Ge, Excitons, Gap, Si, 半导体物理, germanium, metric system, silicon, 光致发光, germanium (deutsch), germanium (francais), phonon-exciton interactions, exciton-phonon interactions, trions, 间隙, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium, sudden impulse, systeme international, state interaction method, stieltje imaging

Relation: APPLIED PHYSICS LETTERS; Huang CJ; Tang Y; Li DZ; Cheng BW; Luo LP; Yu JZ; Wang QM .Different transfer paths for thermally activated electrons and holes in self-organized Ge/Si(001) islands in a multilayer structure ,APPLIED PHYSICS LETTERS,2001 ,78(14):2006-2008; http://ir.semi.ac.cn/handle/172111/12248

الاتاحة: http://ir.semi.ac.cn/handle/172111/12248

المؤلفون: Wang YS, Li JM, Wang YB, Wang YT, Sun GS, Lin LY, Wang YS,Beijing Normal Univ,Dept Phys,Beijing 100875,Peoples R China.

مصطلحات موضوعية: Ion implantatIon, Solid Phase Epitaxy, Si1-xcx Alloy, Si, Implantation, Carbon, 半导体物理, epitaxy, metric system, silicon, bore, 离子注入, ion, plasma immersion ion implantation, piii, plasma materials processing, plasma welding, implantation d ions, ionenimpfung, epitaxial growth, solid phase epitaxial growth, spe, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium, sudden impulse

Relation: ACTA PHYSICA SINICA; Wang YS; Li JM; Wang YB; Wang YT; Sun GS; Lin LY .The effects of pre-irradiation on the formation of Si1-xCx alloys ,ACTA PHYSICA SINICA,2001 ,50(7):1329-1333; http://ir.semi.ac.cn/handle/172111/12150

الاتاحة: http://ir.semi.ac.cn/handle/172111/12150

المؤلفون: Wang YS, Li JM, Zhang FF, Lin LY, Wang YS,Chinese Acad Sci,Inst Semicond,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Si, Sic, Carbonization, Rheed, Hydrocarbon Radicals, Single Crystal Epilayer, Si(001) Surface, Heteroepitaxial Growth, Beam, 半导体材料, metric system, silicon, coalification, reflection high energy electron diffraction, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium, sudden impulse, systeme international, state interaction method, stieltje imaging, spherical interaction approximation, self-interaction correction, carbonification, carbonitization, incarbonization

Relation: JOURNAL OF CRYSTAL GROWTH; Wang YS; Li JM; Zhang FF; Lin LY .The effects of carbonized buffer layer on the growth of SiC on Si ,JOURNAL OF CRYSTAL GROWTH ,1999,201(0):564-567; http://ir.semi.ac.cn/handle/172111/12904

الاتاحة: http://ir.semi.ac.cn/handle/172111/12904

المؤلفون: Wang YS, Li JM, Lin LY, Zhang FF, Wang YS,Chinese Acad Sci,Inst Semicond,Novel Mat Ctr,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Si, Sic, Epitaxial Growth, Rheed, Chemical-vapor-deposition, Raman Spectrum, Heteroepitaxial Growth, Molecular-beam Epitaxy, Hydrocarbon Radicals, Silicon, Surfaces, Films, Layer, 半导体化学, metric system, epitaxy, reflection high energy electron diffraction, atomic layer deposition, chemical vapor deposition, vapor-plating, photography--films, finite volume method, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium, sudden impulse

Relation: APPLIED SURFACE SCIENCE; Wang YS; Li JM; Lin LY; Zhang FF .The growth of SiC on Si substrates with C2H4 and Si2H6 ,APPLIED SURFACE SCIENCE,1999,148(3-4):189-195; http://ir.semi.ac.cn/handle/172111/12860

الاتاحة: http://ir.semi.ac.cn/handle/172111/12860

المؤلفون: Yin F, Li XP, Xiao XR, Zhang BW, Cao Y, Chen JR, Li GH, Han HX, Wang ZP, Xiao XR,Acad Sinica,Inst Photog Chem,Beijing 100101,Peoples R China.

مصطلحات موضوعية: Chemical Adsorption, Porous Silicon, Photoluminescence, Si, 半导体化学, metric system, silicon, 光致发光, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium, sudden impulse, systeme international, state interaction method, stieltje imaging, spherical interaction approximation

Relation: JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY; Yin F; Li XP; Xiao XR; Zhang BW; Cao Y; Chen JR; Li GH; Han HX; Wang ZP .Effects of 9-cyanoanthracene and anthracene adsorption on the photoluminescence of porous silicon ,JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY,1998,112(1):59-61; http://ir.semi.ac.cn/handle/172111/13272

الاتاحة: http://ir.semi.ac.cn/handle/172111/13272

المؤلفون: Gao M, Duan XF, Wang FL, Li JM, Gao M,Chinese Acad Sci,Beijing Lab Electron Microscopy,Inst Phys,Beijing 100080,Peoples R China.

مصطلحات موضوعية: Cavities, Defects, Si, Au, Bubbles, 半导体物理, holes, metric system, silicon, gold, apertures, openings (holes), orifices, perforations, pits (holes), bohrungen, loecher, trous, bores, anomalies, defauts, fehler, flaws, imperfections, faults (defects), international metric system, international system of units, si (weights and measures), si-metric, metric unit

Relation: APPLIED PHYSICS LETTERS; Gao M; Duan XF; Wang FL; Li JM .Two-dimensional network of dislocations and nanocavities in hydrogen-implanted and two-step annealed silicon ,APPLIED PHYSICS LETTERS,1998,72(20):2544-2546; http://ir.semi.ac.cn/handle/172111/13202

الاتاحة: http://ir.semi.ac.cn/handle/172111/13202

المؤلفون: Yin F, Xiao XR, Li XP, Zhang ZZ, Zhang BW, Cao Y, Li GH, Wang ZP, Xiao XR,Chinese Acad Sci,Inst Photog Chem,Beijing 100101,Peoples R China.

مصطلحات موضوعية: Si, Luminescence, Emission, Surface, Wafers, 半导体化学, metric system, silicon, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium, sudden impulse, systeme international, state interaction method, stieltje imaging, spherical interaction approximation, 发光, emission spectra, candoluminescence, ionoluminescence, stokes law (optical), triboluminescence, mechanoluminescence, infrared luminescence, glow, noctilucence

Relation: JOURNAL OF PHYSICAL CHEMISTRY B; Yin F; Xiao XR; Li XP; Zhang ZZ; Zhang BW; Cao Y; Li GH; Wang ZP .Photoluminescence enhancement of porous silicon by organic cyano compounds ,JOURNAL OF PHYSICAL CHEMISTRY B,1998,102(41):7978-7982; http://ir.semi.ac.cn/handle/172111/13076

الاتاحة: http://ir.semi.ac.cn/handle/172111/13076

المؤلفون: XING YR, JAMAL Z, JOYCE TB, BULLOUGH TJ, KIELY CJ, GOODHEW PJ, XING YR UNIV LIVERPOOLDEPT MAT SCI & ENGNPOB 147LIVERPOOL L69 3BXENGLAND

مصطلحات موضوعية: Molecular-beam, Temperature, Si, 半导体材料, molecular beam, metric system, silicon, 分子束, 温度, curing temperature, temperatur, temperature (francais), body temperature (non-biological), atmospheric temperature, temperature control, water temperature, temperatures, absolute temperature, ambient temperature, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium, sudden impulse, systeme international, state interaction method, stieltje imaging

Relation: APPLIED PHYSICS LETTERS; XING YR; JAMAL Z; JOYCE TB; BULLOUGH TJ; KIELY CJ; GOODHEW PJ.GROWTH OF HIGH-QUALITY GALLIUM-ARSENIDE ON HF-ETCHED SILICON (001) BY CHEMICAL BEAM EPITAXY,APPLIED PHYSICS LETTERS,1993,62(14):1653-1655; http://ir.semi.ac.cn/handle/172111/14111

الاتاحة: http://ir.semi.ac.cn/handle/172111/14111

المؤلفون: Fang, Q, Li, F, Liu, YL, Fang, Q, Chinese Acad Sci, Inst Semicond, Opt Elect Res & Dev Ctr, Beijing 100083, Peoples R China.

مصطلحات موضوعية: Arrayed Waveguide Grating, Compact, Polarization-insensitive, SilicOn On Insulator, Silicon-on-insulator, Wavelength Demultiplexer, Multiplexer, Inp, Si, 光电子学, semiconductor-insulator boundaries, metric system, silicon, 紧[的], insulator-semiconductor boundaries, semiconductor-on-insulator, soi, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium, sudden impulse, systeme international, state interaction method, stieltje imaging, spherical interaction approximation

Relation: OPTOELECTRONIC DEVICES AND INTEGRATION丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE); Fang, Q; Li, F; Liu, YL .Compact polarization-insensitive arrayed waveguide grating based on SOI material .见：SPIE-INT SOC OPTICAL ENGINEERING .OPTOELECTRONIC DEVICES AND INTEGRATION丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) ,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2005,PTS 1 AND 2 5644: 769-776 Part 1-2; http://ir.semi.ac.cn/handle/172111/10078

الاتاحة: http://ir.semi.ac.cn/handle/172111/10078

المؤلفون: Tan LW, Wang J, Wang QY, Yu YH, Lin LY, Tan LW Chinese Acad Sci Inst Semicond Ctr Mat Sci Beijing 100083 Peoples R China.

مصطلحات موضوعية: Epitaxial-growth, Al2o3, Si, 半导体材料, epitaxy, metric system, silicon, epitaxial growth, solid phase epitaxial growth, solid phase epitaxy, spe, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium, sudden impulse, systeme international, state interaction method, stieltje imaging, spherical interaction approximation

Relation: INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29); Tan LW; Wang J; Wang QY; Yu YH; Lin LY .Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon .见：WORLD SCIENTIFIC PUBL CO PTE LTD .INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29),JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE ,2002,4302-4305; http://ir.semi.ac.cn/handle/172111/14875

الاتاحة: http://ir.semi.ac.cn/handle/172111/14875

المؤلفون: Wang QM, Li C, Yang QQ, Liu YL, Zhu YQ, Cheng BW, Yu JZ, Wang QM Chinese Acad Sci Inst Semicond State Key Joint Lab Integrated Optoelect Beijing 100083 Peoples R China.

مصطلحات موضوعية: Long-wavelength, Si, Waveguide, Resonant-cavity-enhanced Photodetector, And Optical Communication, 光电子学, metric system, silicon, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium, sudden impulse, systeme international, state interaction method, stieltje imaging, spherical interaction approximation, 波导

Relation: APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580; Wang QM; Li C; Yang QQ; Liu YL; Zhu YQ; Cheng BW; Yu JZ .Long-wavelength Si-based MQW photodetectors for application in optical fiber communication .见：SPIE-INT SOC OPTICAL ENGINEERING .APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2001,243-250; http://ir.semi.ac.cn/handle/172111/13667

الاتاحة: http://ir.semi.ac.cn/handle/172111/13667

المؤلفون: Zou LF, Wang ZG, Sun DZ, Fan TW, Liu XF, Zhang JW, Zou LF CHINESE ACAD SCIINST SEMICONDLAB SEMICOND MAT SCIBEIJING 100083PEOPLES R CHINA.

مصطلحات موضوعية: 半导体材料, Silicon, Si, Precipitation, Temperature, amorphisation, metric system, stieltje imaging, spherical interaction approximation, international metric system, international system of units, si (weights and measures), si-metric, metric unit, silicium, silizium, sudden impulse, systeme international, state interaction method, 降水, decomposition, amorphization, amorphous state, peritectic transformations, displacive transformations, ferroelastic transitions, ferroelasticity, ferroelastic domains, ferroic materials, multiferroics

Relation: CHINESE PHYSICS LETTERS; Zou LF; Wang ZG; Sun DZ; Fan TW; Liu XF; Zhang JW .Diffusion of ion implanted as in Si1-xGex epilayers ,CHINESE PHYSICS LETTERS,1997,14(1):51-54; http://ir.semi.ac.cn/handle/172111/15261

الاتاحة: http://ir.semi.ac.cn/handle/172111/15261