المؤلفون: Yinuo Zhang, Xueyan Li, Yuang Li, Di Wu, Xuecen Miao, Lan Li, Tai Min, Yi Pan

المصدر: Small Structures, Vol 5, Iss 7, Pp n/a-n/a (2024)

مصطلحات موضوعية: 2H‐MoTe2, mirror twin boundary, semiconductor–metal transition, Physics, QC1-999, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2688-4062

URL الوصول: https://doaj.org/article/74beae0d6ac04a2c9cc34becbaa2f229

المؤلفون: Usuki, Takeshi, Benmore, Chris, Tverjanovich, Andrey, Bereznev, Sergei, Khomenko, Maxim, Sokolov, Anton, Fontanari, Daniele, Ohara, Koji, Bokova, Maria, Kassem, Mohammad, Bychkov, Eugene

المساهمون: Yamagata University, Advanced Photon Source ANL (APS), Argonne National Laboratory Lemont (ANL)-University of Chicago-US Department of Energy, St Petersburg State University (SPbU), Tallinn University of Technology (TalTech), Russian Academy of Sciences Moscow (RAS), Laboratoire de Physico-Chimie de l'Atmosphère (LPCA), Université du Littoral Côte d'Opale (ULCO), Japan Synchrotron Radiation Research Institute Hyogo (JASRI), European Project, European Project: FEDER

المصدر: ISSN: 1862-6254.

مصطلحات موضوعية: atomic structures, phase-change materials, semiconductor–metal transition, viscosities, [PHYS]Physics [physics]

الاتاحة: https://ulco.hal.science/hal-04443961
https://ulco.hal.science/hal-04443961v1/document
https://ulco.hal.science/hal-04443961v1/file/Physica%20Rapid%20Research%20Ltrs%20-%202024%20-%20Usuki%20-%20Atomic%20Structure%20and%20Dynamics%20of%20Unusual%20and%20Wide%E2%80%90Gap%20Phase%E2%80%90Change.pdf
https://doi.org/10.1002/pssr.202300482

المؤلفون: Ayesha Tasnim, Md. Mahamudujjaman, Md. Asif Afzal, R.S. Islam, S.H. Naqib

المصدر: Results in Physics, Vol 45, Iss , Pp 106236- (2023)

مصطلحات موضوعية: Density functional theory, Semiconductor-metal transition, Elastic properties, Optoelectronic properties, Physics, QC1-999

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2211379723000293; https://doaj.org/toc/2211-3797

URL الوصول: https://doaj.org/article/80b6ce3f22ab4912839183397026cb48

المؤلفون: Xiaochen Tian, Bocheng Li, Hu Sun, Yucheng Jiang, Run Zhao, Meng Zhao, Ju Gao, Jie Xing, Jie Qiu, Guozhen Liu

المصدر: Nanomaterials, Vol 13, Iss 23, p 3055 (2023)

مصطلحات موضوعية: KTaO 3, surface 2DEG, photoelectric response, semiconductor–metal transition, Chemistry, QD1-999

Relation: https://www.mdpi.com/2079-4991/13/23/3055; https://doaj.org/toc/2079-4991; https://doaj.org/article/b5a796043f364a33a56045f4a3dda6bf

الاتاحة: https://doi.org/10.3390/nano13233055
https://doaj.org/article/b5a796043f364a33a56045f4a3dda6bf

المؤلفون: Jiong-Hua Huang, Xue-Feng Wang, Yu-Shen Liu, Li-Ping Zhou

المصدر: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-11 (2019)

مصطلحات موضوعية: Black phosphorene nanoribbons, Half semiconductor, Spin diode, Semiconductor-metal transition, Edge functionalization, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-019-2971-5; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/665c0d01894c44ed9fcab85cab144176

المؤلفون: A-Long Yao, Xue-Feng Wang, Yu-Shen Liu, Ya-Na Sun

المصدر: Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-7 (2018)

مصطلحات موضوعية: InSe monolayer nanoribbon, Electronic structure, Negative differential resistance, Semiconductor-metal transition, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-018-2517-2; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/fbe3b736402942d294c929f1b9637793

المؤلفون: Mizsei, J. (J.), Lappalainen, J. (J.)

مصطلحات موضوعية: More-than-Moore, bit representation, metal-insulator transition (MIT), semiconductor-metal transition (smt), thermal-electronics

وصف الملف: application/pdf

الاتاحة: http://urn.fi/urn:nbn:fi-fe2019101532713

المؤلفون: Sousanis, Andreas, Poelman, Dirk, Smet, Philippe

المصدر: NANOMATERIALS ; ISSN: 2079-4991

مصطلحات موضوعية: Physics and Astronomy, SmS, EuS, semiconductor-metal transition, structural properties, piezoresistivity, interdiffusion, rare earths, thin films, PHASE-TRANSITION, TEMPERATURE, MECHANISM

وصف الملف: application/pdf

Relation: https://biblio.ugent.be/publication/8637452; http://hdl.handle.net/1854/LU-8637452; http://dx.doi.org/10.3390/nano9111513; https://biblio.ugent.be/publication/8637452/file/8637455

الاتاحة: https://biblio.ugent.be/publication/8637452
http://hdl.handle.net/1854/LU-8637452
https://doi.org/10.3390/nano9111513
https://biblio.ugent.be/publication/8637452/file/8637455

المؤلفون: Channam, Venkat Sunil Kumar, Maury, Francis, Bahlawane, Naoufal

المساهمون: Centre National de la Recherche Scientifique - CNRS (FRANCE), Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE), Université Toulouse III - Paul Sabatier - UT3 (FRANCE), Luxembourg Institute of Science and Technology - LIST (LUXEMBOURG)

مصطلحات موضوعية: Science des matériaux, Micro et nanotechnologies/Microélectronique, Metamaterial, Smart cermet, Vanadium oxide, MOCVD, Emissivity control, Solar selective coatings, Semiconductor-metal transition

وصف الملف: application/pdf

Relation: https://oatao.univ-toulouse.fr/19295/7/Kumar_19295.pdf; HAL : hal-01664250; Channam, Venkat Sunil Kumar and Maury, Francis and Bahlawane, Naoufal. Light modulation in phase change disordered metamaterial - A smart cermet concept. (2017) Materials Today Physics, 3. 41-47. ISSN 2542-5293

الاتاحة: https://oatao.univ-toulouse.fr/19295/
https://oatao.univ-toulouse.fr/19295/7/Kumar_19295.pdf
https://doi.org/10.1016/j.mtphys.2017.12.002

المؤلفون: Chérif, Amira, Saidani, Mohamed, Chérif, Ichraf, Greneche, Jean Marc, Thabet Mliki, Najeh

المساهمون: Laboratoire des Matériaux, Organisation et Propriétés, Université de Tunis, UREME (UR17ES45), Faculté des Sciences de Gabes - Tunisie, Université virtuelle de Tunis (UVT), Institut des Molécules et Matériaux du Mans (IMMM), Le Mans Université (UM)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 1293-2558 ; Solid State Sciences ; https://univ-lemans.hal.science/hal-04096192 ; Solid State Sciences, 2022, 134, pp.107028. ⟨10.1016/j.solidstatesciences.2022.107028⟩.

مصطلحات موضوعية: Nano-ferrite, Dielectric behavior, ac-Conductivity, Semiconductor-metal transition, [CHIM]Chemical Sciences

Relation: hal-04096192; https://univ-lemans.hal.science/hal-04096192

الاتاحة: https://univ-lemans.hal.science/hal-04096192
https://doi.org/10.1016/j.solidstatesciences.2022.107028

المؤلفون: Katagiri, Y., Nakamura, T., Ishii, A., Ohata, C., Hasegawa, M., Katsumoto, S., Cusati, Teresa, Fortunelli, A., IANNACCONE, GIUSEPPE, FIORI, GIANLUCA, Roche, S., Haruyama, J.

المساهمون: Katagiri, Y., Nakamura, T., Ishii, A., Ohata, C., Hasegawa, M., Katsumoto, S., Cusati, Teresa, Fortunelli, A., Iannaccone, Giuseppe, Fiori, Gianluca, Roche, S., Haruyama, J.

مصطلحات موضوعية: 1T phase, Atomically thin layer, electron-beam irradiation, Schottky junction, semiconductor-metal transition, Condensed Matter Physic, Bioengineering, Chemistry (all), Materials Science (all), Mechanical Engineering

Relation: info:eu-repo/semantics/altIdentifier/pmid/27152475; info:eu-repo/semantics/altIdentifier/wos/WOS:000377642700055; volume:16; issue:6; firstpage:3788; lastpage:3794; numberofpages:7; journal:NANO LETTERS; http://hdl.handle.net/11568/797648; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84974623453

الاتاحة: http://hdl.handle.net/11568/797648
https://doi.org/10.1021/acs.nanolett.6b01186
http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b01186

المؤلفون: Kang, CJ, Choi, HC, Kim, K, Min, BI

المساهمون: 물리학과, 10069852, Min, BI

مصطلحات موضوعية: SEMICONDUCTOR-METAL TRANSITION, HEAVY-FERMION SYSTEMS, HIGH-PRESSURE, INTERMEDIATE-VALENCE, ELECTRONIC-STRUCTURE, SAMARIUM SULFIDE, SMB6, MONOCHALCOGENIDES, STATES, GAP

Relation: PHYSICAL REVIEW LETTERS; 114; 16; SCI급, SCOPUS 등재논문; SCI; Physics, Multidisciplinary; Physics; 2015-OAK-0000032808; https://oasis.postech.ac.kr/handle/2014.oak/13229; 17541; PHYSICAL REVIEW LETTERS, v.114, no.16; 000353289300009; 2-s2.0-84929598541

الاتاحة: https://oasis.postech.ac.kr/handle/2014.oak/13229
https://doi.org/10.1103/PHYSREVLETT.114.166404

المؤلفون: Essalah, G., Leroy, Gérard, Guermazi, S., Guermazi, H., Carru, Jean-Claude, Duponchel, Benoit, Poupin, Christophe, Cousin, Renaud, Mascot, Manuel

المساهمون: Unité de Dynamique et Structure des Matériaux Moléculaires (UDSMM), Université du Littoral Côte d'Opale (ULCO), Université de Sfax - University of Sfax, Faculté des Sciences de Sfax (FSS), Unité de Chimie Environnementale et Interactions sur le Vivant (UCEIV), SFR Condorcet, Université de Reims Champagne-Ardenne (URCA)-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 0272-8842 ; Ceramics International ; https://hal.science/hal-04333676 ; Ceramics International, 2021, 47 (17), pp.24732-24742. ⟨10.1016/j.ceramint.2021.05.196⟩.

مصطلحات موضوعية: Composite, Semiconductor-metal transition, Conduction mechanisms, MWS, Dipolar relaxation, [CHIM]Chemical Sciences, [CHIM.CATA]Chemical Sciences/Catalysis

Relation: hal-04333676; https://hal.science/hal-04333676

الاتاحة: https://hal.science/hal-04333676
https://doi.org/10.1016/j.ceramint.2021.05.196

المؤلفون: Gaspard, Jean-Pierre, Bichara, C., Raty, Jean-Yves, Gonis, A., Colombo, L.

المصدر: urn:isbn:1 55899 396 7
Tight-Binding Approach to Computational Materials Science. Symposium Boston, MA, USA,, Boston, United States [US], 1-3 Dec. 1997

مصطلحات موضوعية: Theoretical or Mathematical/ liquid structure, liquid theory, metal-insulator transition, Monte Carlo methods, tight-binding calculations, van der Waals forces/ covalent liquids, tight binding simulation, repulsive potential, Peierls distortions, octet rule, threefold coordinated structure, sixfold coordinated structure, semiconductor-metal transition, tight binding Monte Carlo simulations, Van der Waals potential, Sb, As, AsSb/ A6120J Computer simulation of static and dynamic liquid behaviour A7130 Metal-insulator transitions and other electronic transitions A7115F Atomic- and molecular-orbital methods (condensed matter electronic structure) A7115Q Molecular dynamics calculations and other numerical simulations (condensed matter electronic structure)/ Sb/el, As/el, AsSb/bin As /bin Sb/bin, Physical, chemical, mathematical & earth Sciences, Physics, Chemistry, Physique, chimie, mathématiques & sciences de la terre, Physique, Chimie

URL الوصول: https://orbi.uliege.be/handle/2268/109698

المؤلفون: Dirk Poelman, Philippe Smet, Andreas Sousanis

المصدر: Nanomaterials, Vol 9, Iss 11, p 1513 (2019)
Nanomaterials
Volume 9
Issue 11
NANOMATERIALS

مصطلحات موضوعية: MECHANISM, Phase transition, Materials science, General Chemical Engineering, semiconductor-metal transition, 02 engineering and technology, 01 natural sciences, Article, lcsh:Chemistry, X-ray photoelectron spectroscopy, sms, 0103 physical sciences, General Materials Science, Thin film, TEMPERATURE, EUS, 010302 applied physics, structural properties, rare earths, Nanocomposite, business.industry, Drop (liquid), 021001 nanoscience & nanotechnology, Piezoresistive effect, Semiconductor, Physics and Astronomy, thin films, lcsh:QD1-999, SMS, PHASE-TRANSITION, Optoelectronics, Sublimation (phase transition), piezoresistivity, interdiffusion, 0210 nano-technology, business, eus

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::954e565b2e13ce88e05522b84f613059
https://www.mdpi.com/2079-4991/9/11/1513

المؤلفون: Hu, Qiang, Wei, Tongbo, Duan, Ruifei, Yang, Jiankun, Huo, Ziqiang, Zeng, Yiping, Xu, Shu, Hu, Q.(huqiang@semi.ac.cn)

مصطلحات موضوعية: Carrier Concentration, Etching, Gallium Alloys, Optical Properties, Point Defects, Raman Spectroscopy, Semiconducting Gallium Compounds, Vapor Phase Epitaxy, Vapors, 半导体材料, carrier density, aggressiveness, gases, carrier lifetime, carrier diffusion length, electron lifetime (semiconductors), carrier mean free path, mean free path, carrier, carrier mobility, mobility, carrier relaxation time, relaxation time, electrical conductivity transitions, semiconductor-metal transition, switching transitions, electron mean free path, electron mean free path (metals), electron relaxation time, electron lifetime (metals)

Relation: Materials Science in Semiconductor Processing; Hu, Qiang; Wei, Tongbo; Duan, Ruifei; Yang, Jiankun; Huo, Ziqiang; Zeng, Yiping; Xu, Shu. Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy, Materials Science in Semiconductor Processing,2011, ( ); http://ir.semi.ac.cn/handle/172111/23146

الاتاحة: http://ir.semi.ac.cn/handle/172111/23146

المؤلفون: Zhang, Yanbo, Du, Yandong, Xiong, Ying, Yang, Xiang, Han, Weihua, Yang, Fuhua, Han, W.(weihua@semi.ac.cn)

مصطلحات موضوعية: Carrier Concentration, Electric Fields, Fins(Heat Exchange), 微电子学, carrier density, carrier lifetime, carrier diffusion length, electron lifetime (semiconductors), carrier mean free path, mean free path, carrier, carrier mobility, mobility, carrier relaxation time, relaxation time, electrical conductivity transitions, semiconductor-metal transition, switching transitions, electron mean free path, electron mean free path (metals), electron relaxation time, electron lifetime (metals), electron relaxation time (metals), hall mobility, hole density, hole mobility, libre parcours moyen de l electron, mittlere freie elektronenweglaenge, astrophysical electric fields, electrostatic fields

Relation: Journal of Semiconductors; Zhang, Yanbo; Du, Yandong; Xiong, Ying; Yang, Xiang; Han, Weihua; Yang, Fuhua,. Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs, Journal of Semiconductors,2011,32(9):94001; http://ir.semi.ac.cn/handle/172111/23070

الاتاحة: http://ir.semi.ac.cn/handle/172111/23070

المؤلفون: Xiong KL (Xiong Kanglin), Lu SL (Lu Shulong), Jiang DS (Jiang Desheng), Dong JR (Dong Jianrong), Yang H (Yang Hui), Xiong, KL, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn

مصطلحات موضوعية: Carrier Lifetime, Numerical Analysis, Semiconductor Thin Films, Surface Recombination, Surface Texture, 光电子学, carrier density, semiconductor epitaxial layers, auger effect, segregation, carrier concentration, carrier diffusion length, electron lifetime (semiconductors), carrier mean free path, mean free path, carrier, carrier mobility, mobility, carrier relaxation time, relaxation time, electrical conductivity transitions, semiconductor-metal transition, switching transitions, electron mean free path, electron mean free path (metals), electron relaxation time, electron lifetime (metals), electron relaxation time (metals), hall mobility, hole density

Relation: APPLIED PHYSICS LETTERS; Xiong KL (Xiong Kanglin), Lu SL (Lu Shulong), Jiang DS (Jiang Desheng), Dong JR (Dong Jianrong), Yang H (Yang Hui).Effective recombination velocity of textured surfaces.APPLIED PHYSICS LETTERS,2010,96(19):Art. No. 193107; http://ir.semi.ac.cn/handle/172111/11277

الاتاحة: http://ir.semi.ac.cn/handle/172111/11277

المؤلفون: Ma BS, Wang WJ, Su FH, Den JJ, Jiang CP, Liu HL, Ding K, Zhao JH, Li GH, Ma, BS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

مصطلحات موضوعية: Gamnas, Raman Spectrum, Coupled Plamon-lo-phonon Mode, Hole Density, Gaas, Mocvd, (Ga, Films, Mn)As, Gan, 光电子学, carrier density, gallium arsenide, atomic layer deposition, photography--films, finite volume method, carrier concentration, carrier lifetime, carrier diffusion length, electron lifetime (semiconductors), carrier mean free path, mean free path, carrier, carrier mobility, mobility, carrier relaxation time, relaxation time, electrical conductivity transitions, semiconductor-metal transition, switching transitions

Relation: JOURNAL OF INFRARED AND MILLIMETER WAVES; Ma BS; Wang WJ; Su FH; Den JJ; Jiang CP; Liu HL; Ding K; Zhao JH; Li GH .Study on Raman spectra of GaMnAs ,JOURNAL OF INFRARED AND MILLIMETER WAVES,2006,25(3):207-212; http://ir.semi.ac.cn/handle/172111/10570

الاتاحة: http://ir.semi.ac.cn/handle/172111/10570

المؤلفون: Liping Zhou, Xue-Feng Wang, Jiong-Hua Huang, Yushen Liu

المصدر: Nanoscale Research Letters
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-11 (2019)

مصطلحات موضوعية: Materials science, Spin diode, Semiconductor-metal transition, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, symbols.namesake, chemistry.chemical_compound, Black phosphorene nanoribbons, Transition metal, Electric field, lcsh:TA401-492, General Materials Science, Spin (physics), Condensed matter physics, Nano Express, Edge functionalization, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Phosphorene, Ferromagnetism, Stark effect, chemistry, symbols, lcsh:Materials of engineering and construction. Mechanics of materials, Density functional theory, 0210 nano-technology, Half semiconductor

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2297de3ceb14e69c363d021d1dd86743
https://pubmed.ncbi.nlm.nih.gov/31030371