المؤلفون: Sungjoo Song, Seung-Hwan Kim, Kyu-Hyun Han, Hyung-jun Kim, Hyun-Yong Yu

مصطلحات موضوعية: Medicine, Cancer, Infectious Diseases, Space Science, Biological Sciences not elsewhere classified, Mathematical Sciences not elsewhere classified, self alignment effect, schottky barrier height, performance device applications, induced gap states, extremely challenging problem, excellent ohmic contacts, si substrate resulted, work function differences, cmos logical circuitry, drain contact structure, level using graphene, gr effectively modulated, metal work function, one semiconductor type, sbh values reduced, work function, contact structure, type si, sbh values, effectively alleviated, contact structures, contact resistance, contact metal, universal source

Relation: https://figshare.com/articles/journal_contribution/In-Depth_Analysis_on_Self_Alignment_Effect_of_the_Fermi-Level_Using_Graphene_on_Both_n-_and_p_Type_Semiconductors/24700965

الاتاحة: https://doi.org/10.1021/acsami.3c14386.s001
https://figshare.com/articles/journal_contribution/In-Depth_Analysis_on_Self_Alignment_Effect_of_the_Fermi-Level_Using_Graphene_on_Both_n-_and_p_Type_Semiconductors/24700965