المؤلفون: José Carlos Pérez‐Martínez, Diego Martín‐Martín, Belén Arredondo, Beatriz Romero

المصدر: Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024)

مصطلحات موضوعية: buffer layer, perovskite memristor, resistive switching memory devices, retention time, TCAD numerical simulations, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/29a578ff1b7f4a44b82bd69a7dcfe06e

المؤلفون: Bixin Li, Fei Xia, Bin Du, Shiyang Zhang, Lan Xu, Qiong Su, Dingke Zhang, Junliang Yang

المصدر: Advanced Science, Vol 11, Iss 23, Pp n/a-n/a (2024)

مصطلحات موضوعية: 2D halide perovskite, artificial synapses, resistive switching memory, Ruddlesden–Popper, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2198-3844

URL الوصول: https://doaj.org/article/9a005a24613641d28aaf8d2b0cd0da51

المؤلفون: Cheema, Suraj S, Shanker, Nirmaan, Hsu, Cheng‐Hsiang, Datar, Adhiraj, Bae, Jongho, Kwon, Daewoong, Salahuddin, Sayeef

المصدر: Advanced Electronic Materials. 8(6)

مصطلحات موضوعية: Engineering, Materials Engineering, Nanotechnology, ferroelectric tunnel junction, hafnium oxide, resistive switching memory, ultrathin ferroelectricity, Electrical and Electronic Engineering, Macromolecular and materials chemistry, Materials engineering

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/9068914v
https://escholarship.org/content/qt9068914v/qt9068914v.pdf

المؤلفون: Zolile Wiseman Dlamini, Sreedevi Vallabhapurapu, Jennifer Nambooze, Anke Wilhelm, Elizabeth Erasmus, Refilwe Mogale, Marthinus Rudi Swart, Vijaya Srinivasu Vallabhapurapu, Bheki Mamba, Wendy Setlalentoa, Tebogo Sfiso Mahule, Vanessa de Oliveira Arnoldi Pellegrini, Shaun Cronje, Igor Polikarpov

المصدر: Polymers ; Volume 16 ; Issue 20 ; Pages: 2949

مصطلحات موضوعية: resistive switching memory, NaCMC, plant extract, biodegradable

وصف الملف: application/pdf

Relation: Biobased and Biodegradable Polymers; https://dx.doi.org/10.3390/polym16202949

الاتاحة: https://doi.org/10.3390/polym16202949

المؤلفون: Cheema, SS, Shanker, N, Hsu, CH, Datar, A, Bae, J, Kwon, D, Salahuddin, S

مصطلحات موضوعية: ferroelectric tunnel junction, hafnium oxide, resistive switching memory, ultrathin ferroelectricity, Electrical and Electronic Engineering, Materials Engineering

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/9068914v

المؤلفون: Seung Soo Kim, Soo Kyeom Yong, Jihun Kim, Jin Myung Choi, Tae Won Park, Hyun Young Kim, Hae Jin Kim, Cheol Seong Hwang

المصدر: Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)

مصطلحات موضوعية: Al‐doped HfO 2, intercell interference, lateral charge spreading, self‐rectifying memory, vertical resistive switching memory, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/3616e16c945b4aeab0153e149bd2b5e4

المؤلفون: Yang Li, Wei Wang, Di Zhang, Maria Baskin, Aiping Chen, Shahar Kvatinsky, Eilam Yalon, Lior Kornblum

المصدر: Advanced Electronic Materials, Vol 9, Iss 2, Pp n/a-n/a (2023)

مصطلحات موضوعية: atomic layer deposition, conductive oxide interfaces, resistive switching, resistive switching memory, 2D electron gas, valence change memory, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/df9c38b0b59443329e764d45fec3b84d

المؤلفون: Aguilera Pedregosa, Cristina, Maldonado Correa, David, Jiménez Molinos, Francisco, Roldán Aranda, Juan Bautista

مصطلحات موضوعية: Resistive switching memory, RRAM, Temperature characterization, Simulation, Variability, Modeling, Kinetic Monte Carlo, Series resistance

Relation: Aguilera-Pedregosa, C.; Maldonado, D.; González, M.B.; Moreno, E.; Jiménez-Molinos, F.; Campabadal, F.; Roldán, J.B. Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories. Micromachines 2023, 14, 630. [https://doi.org/10.3390/mi14030630]; https://hdl.handle.net/10481/81740

الاتاحة: https://hdl.handle.net/10481/81740
https://doi.org/10.3390/mi14030630

المؤلفون: Min-Kyu Song, Ji-Hoon Kang, Xinyuan Zhang, Wonjae Ji, Alon Ascoli, Ioannis Messaris, Ahmet Samil Demirkol, Bowei Dong, Samarth Aggarwal, Weier Wan, Seok-Man Hong, Suma George Cardwell, Irem Boybat, Jae-sun Seo, Jang-Sik Lee, Mario Lanza, Hanwool Yeon, Murat Onen, Ju Li, Bilge Yildiz, Jes('(u))s A. del Alamo, Seyoung Kim, Shinhyun Choi, Gianluca Milano, Carlo Ricciardi, Lambert Alff, Yang Chai, Zhongrui Wang, Harish Bhaskaran, Mark C. Hersam, Dmitri Strukov, H. -S. Philip Wong, Ilia Valov, Bin Gao, Huaqiang Wu, Ronald Tetzlaff, Abu Sebastian, Wei Lu, Leon Chua, J. Joshua Yang, Jeehwan Kim

المساهمون: Song, Min-Kyu, Kang, Ji-Hoon, Zhang, Xinyuan, Ji, Wonjae, Ascoli, Alon, Messaris, Ioanni, Samil Demirkol, Ahmet, Dong, Bowei, Aggarwal, Samarth, Wan, Weier, Hong, Seok-Man, George Cardwell, Suma, Boybat, Irem, Seo, Jae-sun, Lee, Jang-Sik, Lanza, Mario, Yeon, Hanwool, Onen, Murat, Li, Ju, Yildiz, Bilge, del Alamo, Jes('(u))s. A., Kim, Seyoung, Choi, Shinhyun, Milano, Gianluca, Ricciardi, Carlo, Alff, Lambert, Chai, Yang, Wang, Zhongrui, Bhaskaran, Harish, Hersam, Mark C., Strukov, Dmitri, Philip Wong, H. -S., Valov, Ilia, Gao, Bin, Wu, Huaqiang, Tetzlaff, Ronald, Sebastian, Abu, Lu, Wei, Chua, Leon, Joshua Yang, J., Kim, Jeehwan

مصطلحات موضوعية: compute-in-memory, ferroelectric memory, in-sensor computing, ion-intercalation resistor, memristor, memtransistor, neuromorphic computing, phase change memory, resistive switching memory

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001019357000001; volume:17; issue:13; firstpage:11994; lastpage:12039; numberofpages:46; journal:ACS NANO; https://hdl.handle.net/11583/2981583; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85164302676

الاتاحة: https://hdl.handle.net/11583/2981583
https://doi.org/10.1021/acsnano.3c03505
https://pubs.acs.org/doi/10.1021/acsnano.3c03505

المؤلفون: Juan Ramirez-Rios, Karla Esther González-Flores, José Juan Avilés-Bravo, Sergio Alfonso Pérez-García, Javier Flores-Méndez, Mario Moreno-Moreno, Alfredo Morales-Sánchez

المصدر: Nanomaterials; Volume 13; Issue 14; Pages: 2124

مصطلحات موضوعية: resistive switching memory, conductive filaments, silicon nanocrystals, two-dimensional oxygen vacancy configuration, valence change memory

وصف الملف: application/pdf

Relation: Nanoelectronics, Nanosensors and Devices; https://dx.doi.org/10.3390/nano13142124

الاتاحة: https://doi.org/10.3390/nano13142124

المؤلفون: Robert Winkler, Alexander Zintler, Stefan Petzold, Eszter Piros, Nico Kaiser, Tobias Vogel, Déspina Nasiou, Keith P. McKenna, Leopoldo Molina‐Luna, Lambert Alff

المصدر: Advanced Science, Vol 9, Iss 33, Pp n/a-n/a (2022)

مصطلحات موضوعية: first principle calculation, grain boundary atomic structures, hafnium oxide, resistive switching memory, scanning transmission electron microscopy, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2198-3844

URL الوصول: https://doaj.org/article/aae7e74c78ff4b93b6b77cf8d0629c7b

المؤلفون: Cheong Kuan Yew, Tayeb Ilias Ait, Zhao Feng, Abdullah Jafri Malin

المصدر: Nanotechnology Reviews, Vol 10, Iss 1, Pp 680-709 (2021)

مصطلحات موضوعية: green electronic, resistive switching memory, bio-organic materials, memory mechanism, metal–insulator–metal, Technology, Chemical technology, TP1-1185, Physical and theoretical chemistry, QD450-801

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2191-9097

URL الوصول: https://doaj.org/article/e6f07842c69e4e5cbc99470eb449e12e

المؤلفون: Saverio Ricci, Piergiulio Mannocci, Matteo Farronato, Shahin Hashemkhani, Daniele Ielmini

المصدر: Advanced Intelligent Systems, Vol 4, Iss 8, Pp n/a-n/a (2022)

مصطلحات موضوعية: forming, in-memory computing, matrix-vector multiplication, principal component analysis, resistive switching memory, Computer engineering. Computer hardware, TK7885-7895, Control engineering systems. Automatic machinery (General), TJ212-225

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2640-4567

URL الوصول: https://doaj.org/article/e47f0f84c0ed440192be920247a9e143

المؤلفون: Vokhmintsev, A., Petrenyov, I., Kamalov, R., Weinstein, I.

المصدر: Nanotechnology

مصطلحات موضوعية: MEMRISTOR, OXYGEN VACANCIES, QUANTUM CONDUCTIVE FILAMENTS, RESISTANCE STATE, ZRO2, DIGITAL STORAGE, ELECTRIC FIELDS, GOLD COMPOUNDS, MEMRISTORS, NANOTUBES, QUANTUM THEORY, ZIRCONIA, CONDUCTIVE FILAMENTS, HIGH RESISTANCE, LOW RESISTANCE, MEMORY EFFECTS, QUANTUM CONDUCTIVE FILAMENT, RESISTANCE RATIO, RESISTIVE SWITCHING MEMORY, ZIRCONIA NANOTUBES

وصف الملف: application/pdf

Relation: Quantum Conductors Formation and Resistive Switching Memory Effects in Zirconia Nanotubes / A. Vokhmintsev, I. Petrenyov, R. Kamalov et al. // Nanotechnology. — 2022. — Vol. 33. — Iss. 7. — 075208.; All Open Access, Green; http://elar.urfu.ru/handle/10995/111396; 85121784261; 000723405100001

الاتاحة: http://elar.urfu.ru/handle/10995/111396
https://doi.org/10.1088/1361-6528/ac2e22

المؤلفون: Maldonado, D., Aguilera-Pedregosa, C., Vinuesa, G., García, H., Dueñas, S., Castán, H., Aldana, S., González, M.B., Moreno, E., Jiménez-Molinos, F., Campabadal, F., Roldán, J.B.

مصطلحات موضوعية: Resistive switching memory, RRAM, Temperature characterization, Simulation, Variability, Modeling, Kinetic Monte Carlo, Series resistance

وصف الملف: application/pdf

Relation: https://www.sciencedirect.com/science/article/pii/S096007792200457X?via%3Dihub#ks0005; https://doi.org/10.1016/j.chaos.2022.112247; Volume 160, July 2022, 112247; https://uvadoc.uva.es/handle/10324/66071; 112247; Chaos, Solitons & Fractals; 160

الاتاحة: https://uvadoc.uva.es/handle/10324/66071
https://doi.org/10.1016/j.chaos.2022.112247

المؤلفون: Maldonado Correa, David, Aldana Delgado, Samuel, González, M. B., Jiménez Molinos, Francisco, Campabadal, F., Roldán Aranda, Juan Bautista

مصطلحات موضوعية: Resistive switching memory, RRAM parameter extraction, Kinetic Monte Carlo simulation, Variability, Numerical methods, Series resistance

Relation: Microelectronic Engineering 265 (2022) 111876 [https://doi.org/10.1016/j.mee.2022.111876]; http://hdl.handle.net/10481/76703

الاتاحة: http://hdl.handle.net/10481/76703
https://doi.org/10.1016/j.mee.2022.111876

المؤلفون: Maldonado Correa, David, Aldana Delgado, Samuel, González, M. B., Jiménez Molinos, Francisco, Ibáñez Pérez, María José, Barrera Rosillo, Domingo, Campabadal, F., Roldán Aranda, Juan Bautista

مصطلحات موضوعية: Resistive switching memory, RRAM, Parameter extraction, Kinetic Monte Carlo simulation, Variability, Modeling, Numerical techniques

Relation: D. Maldonado et al. Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective. Microelectronic Engineering 257 (2022) 111736 [https://doi.org/10.1016/j.mee.2022.111736]; http://hdl.handle.net/10481/72821

الاتاحة: http://hdl.handle.net/10481/72821
https://doi.org/10.1016/j.mee.2022.111736

المؤلفون: Tong Chen, Kangmin Leng, Zhongyuan Ma, Xiaofan Jiang, Kunji Chen, Wei Li, Jun Xu, Ling Xu

المصدر: Nanomaterials; Volume 13; Issue 1; Pages: 85

مصطلحات موضوعية: resistive switching memory, transient current, trap state

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/nano13010085

الاتاحة: https://doi.org/10.3390/nano13010085

المؤلفون: Jaegun Lee, Ju-Young Choi, Junhwan Jang, Sechang Park, Gyumin Ji, Seung-Hyun Lee, Dam-Bi Kim, Kang-Hoon Yoon, Chan-Moon Chung, Soohaeng Cho

المصدر: Nanomaterials; Volume 12; Issue 9; Pages: 1457

مصطلحات موضوعية: colorless poly(amide-imide), Ag nanowire, GO-cysteamine-Ag nanoparticle (GCA), transparent and flexible electrode, resistive switching memory

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/nano12091457

الاتاحة: https://doi.org/10.3390/nano12091457

المؤلفون: Branca, Nuno Miguel de Almeida Casa

المساهمون: Kiazadeh, Asal, Deuermeier, Jonas, RUN

مصطلحات موضوعية: memristor, resistive switching memory, ZTO, transparent electronic, Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia

وصف الملف: application/pdf

الاتاحة: http://hdl.handle.net/10362/99348