المؤلفون: Yefei Yin, Atasi Chatterjee, Davood Momeni, Mattias Kruskopf, Martin Götz, Stefan Wundrack, Frank Hohls, Klaus Pierz, Hans W. Schumacher

المصدر: Advanced Physics Research, Vol 1, Iss 1, Pp n/a-n/a (2022)

مصطلحات موضوعية: epitaxial graphene on SiC, F4‐TCNQ, graphene functionalization, molecular doping, quantum Hall resistance, quantum resistance metrology, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2751-1200

URL الوصول: https://doaj.org/article/3dcf80f6845e489bab45409df8f56f0f

المؤلفون: He, Hans, 1989

مصطلحات موضوعية: Epitaxial Graphene, Magnetotransport, Quantum Resistance Metrology, Chemical Doping

وصف الملف: electronic

URL الوصول: https://research.chalmers.se/publication/503124
https://research.chalmers.se/publication/503124/file/503124_Fulltext.pdf

المؤلفون: Lartsev, Arseniy, 1987, Lara Avila, Samuel, 1983, Danilov, Andrey, 1961, Tzalenchuk, A.Y., Kubatkin, Sergey, 1959

المصدر: Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship) New Electronics Concept: Wafer-Scale Epitaxial Graphene (ConceptGraphene) Journal of Applied Physics. 118(4)

مصطلحات موضوعية: resistance metrology, Graphene, quantum Hall effect

وصف الملف: electronic

URL الوصول: https://research.chalmers.se/publication/220052
http://publications.lib.chalmers.se/records/fulltext/220052/local_220052.pdf

المؤلفون: Lartsev, Arseniy, 1987

مصطلحات موضوعية: quantum Hall effect, resistance metrology, epitaxial graphene, quantum Hall array, magnetotransport

وصف الملف: electronic

URL الوصول: https://research.chalmers.se/publication/222139
http://publications.lib.chalmers.se/records/fulltext/222139/222139.pdf

المؤلفون: Yager, Thomas, 1987

مصطلحات موضوعية: charge neutrality, optical microscopy, Epitaxial graphene, resistance metrology, silicon carbide, quantum Hall effect, electron transport, bilayer graphene

وصف الملف: electronic

URL الوصول: https://research.chalmers.se/publication/225692
http://publications.lib.chalmers.se/records/fulltext/225692/225692.pdf

المؤلفون: Momeni Pakdehi, Davood

مصطلحات موضوعية: SiC, Argon-Flussrate, polymer-assisted sublimation growth, Wachstum des epitaktischen Graphens, Polarization doping, epitaxial graphene growth, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Widerstandsanisotropie, resistance anisotropy, argon flow-rate, silicon carbide, 0103 physical sciences, homogenous quasi-freestanding graphene, Stacking-order, ddc:530, Dewey Decimal Classification::500 | Naturwissenschaften::530 | Physik, Quantum resistance metrology, 010306 general physics, 0210 nano-technology, homogenes quasi-freistehendes Graphen, Siliciumcarbid

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70288ade250e8e224d7fba4b633ab04c

المؤلفون: Mattias Kruskopf, Randolph E. Elmquist

المصدر: Metrologia

مصطلحات موضوعية: Fabrication, Materials science, Graphene, System of measurement, General Engineering, 02 engineering and technology, Quantum Hall effect, 021001 nanoscience & nanotechnology, 01 natural sciences, Engineering physics, epitaxial graphene, Article, law.invention, Metrology, quantum Hall effect, law, 0103 physical sciences, Epitaxial graphene, quantum resistance metrology, Ohm, 010306 general physics, 0210 nano-technology, Quantum

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::571f8dcd79b0ec6cc93fe718ac3c1493
http://europepmc.org/articles/PMC6463316

المؤلفون: Chua, C., Connolly, M., Lartsev, Arseniy, 1987, Yager, Thomas, 1987, Lara Avila, Samuel, 1983, Kubatkin, Sergey, 1959, Kopylov, S., Fal'ko, V., Yakimova, R., Pearce, R., Janssen, Tjbm, Tzalenchuk, A.Y., Smith, C. G.

المصدر: Nano Letters. 14(6):3369-3373

مصطلحات موضوعية: resistance metrology, monolayer and bilayer graphene, quantum point contact, scanning gate microscopy, SiC epitaxial graphene, quantum hall effect

URL الوصول: https://research.chalmers.se/publication/200387
http://dx.doi.org/10.1021/nl5008757

المؤلفون: Chae, Dong-Hun, Kim, Wan-Seop, Satrapinski, Alexandre, Novikov, Sergei

المصدر: Chae , D-H , Kim , W-S , Satrapinski , A & Novikov , S 2016 , Precision measurements of quantum hall resistance plateau in doping-controlled graphene device . in Precision Electromagnetic Measurements (CPEM 2016), 2016 Conference on . , 7540495 , IEEE Institute of Electrical and Electronic Engineers , pp. 1 - 2 , Conference on Precision Electromagnetic Measurements, CPEM 2016 , Ottawa , Canada , 10/07/16 . https://doi.org/10.1109/CPEM.2016.7540495

مصطلحات موضوعية: cryogenic current comparator, Graphene, precision measurement, quantum Hall effect, resistance metrology

الاتاحة: https://cris.vtt.fi/en/publications/aa4bfc7e-cf86-4b65-b48f-67984d6decdd
https://doi.org/10.1109/CPEM.2016.7540495

المؤلفون: Yin, Yefei, Chatterjee, Atasi, Momeni, Davood, Kruskopf, Mattias, Götz, Martin, Wundrack, Stefan, Hohls, Frank, Pierz, Klaus, Schumacher, Hans W.

مصطلحات موضوعية: epitaxial graphene on SiC, F4-TCNQ, graphene functionalization, molecu- lar doping, quantum Hall resistance, quantum resistance metrology

Relation: https://doi.org/10.1002/apxr.202200015; https://zenodo.org/communities/18sib07-giqs; https://doi.org/10.5281/zenodo.7342463; https://doi.org/10.5281/zenodo.7342464; oai:zenodo.org:7342464

الاتاحة: https://doi.org/10.5281/zenodo.7342464

المؤلفون: Alexander Tzalenchuk, Samuel Lara-Avila, Sergey Kubatkin, Arseniy Lartsev, Rositsa Yakimova, Andrey Danilov

المصدر: Journal of Applied Physics (0021-8979) vol.118(2015)

مصطلحات موضوعية: Materials science, General Physics and Astronomy, 02 engineering and technology, Quantum Hall effect, Series and parallel circuits, 7. Clean energy, 01 natural sciences, law.invention, quantum Hall effect, chemistry.chemical_compound, resistance metrology, law, Electrical resistivity and conductivity, 0103 physical sciences, Silicon carbide, 010306 general physics, Condensed matter physics, Graphene, Kemi, Orders of magnitude (numbers), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Magnetic field, chemistry, Chemical Sciences, 0210 nano-technology, Current density

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f532141662ede854ad16e035bfacb57a
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-120874

المؤلفون: Connolly, M.R., Puddy, R.K., Logoteta, D., Marconcini, P., Roy, Mervyn, Griffiths, J.P., Jones, G.A.C., Maksym, P.A., Macucci, M., Smith, C.G.

مصطلحات موضوعية: Graphene, scanning gate microscopy, quantum Hall effect, resistance metrology, quantum percolation

Relation: http://www.ncbi.nlm.nih.gov/pubmed/23078572; Nano Letters, 2012, 12 (11), pp 5448–5454; http://hdl.handle.net/2381/28149

الاتاحة: http://pubs.acs.org/doi/abs/10.1021/nl3015395
http://hdl.handle.net/2381/28149
https://doi.org/10.1021/nl3015395

المؤلفون: M.R. Connolly, R.K. Puddy, D. Logoteta, P. Marconcini, Mervyn Roy, J.P. Griffiths, G.A.C. Jones, P.A. Maksym, M. Macucci, C.G. Smith

مصطلحات موضوعية: Uncategorized, Graphene, scanning gate microscopy, quantum Hall effect, resistance metrology, quantum percolation

Relation: 2381/28149; https://figshare.com/articles/journal_contribution/Unraveling_Quantum_Hall_Breakdown_in_Bilayer_Graphene_with_Scanning_Gate_Microscopy/10135886

الاتاحة: https://figshare.com/articles/journal_contribution/Unraveling_Quantum_Hall_Breakdown_in_Bilayer_Graphene_with_Scanning_Gate_Microscopy/10135886

المؤلفون: Kruskopf, Mattias, Bauer, Stephan, Pimsut, Yaowaret, Chatterjee, Atasi, Patel, Dinesh K, Rigosi, Albert F., Elmquist, Randolph E., Pierz, Klaus, Pesel, Eckart, Götz, Martin, Schurr, Jürgen

مصطلحات موضوعية: epitaxial graphene, quantum Hall effect, electrical metrology, resistance metrology, quantum metrology

Relation: https://doi.org/10.1109/TED.2021.3082809; https://zenodo.org/communities/18sib07-giqs; https://doi.org/10.5281/zenodo.5076039; https://doi.org/10.5281/zenodo.5076040; oai:zenodo.org:5076040

الاتاحة: https://doi.org/10.5281/zenodo.5076040

المؤلفون: Janssen, Tjbm, Rozhko, S., Williams, J. M., Ireland, J., Giblin, S. P., He, Hans, 1989, Lara Avila, Samuel, 1983, Kubatkin, Sergey, 1959, Yakimova, R., Tzalenchuk, A.Y.

المصدر: 2016 Conference on Precision Electromagnetic Measurements (Cpem 2016).

مصطلحات موضوعية: primary resistance metrology, quantum Hall effect, cryogenic current comparators, graphene

URL الوصول: https://research.chalmers.se/publication/245644

المؤلفون: Janssen, T. J. B. M., Rozhko, S., Williams, J. M., Ireland, J., Giblin, S. P., He, H., Lara-Avila, S., Kubatkin, S., Yakimova, Rositsa, Tzalenchuk, A.

مصطلحات الفهرس: quantum Hall effect; graphene; primary resistance metrology; cryogenic current comparators, Other Electrical Engineering, Electronic Engineering, Information Engineering, Annan elektroteknik och elektronik, Conference paper, info:eu-repo/semantics/conferenceObject, text

URL: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-132237
2016 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2016)

المؤلفون: Chua, Cassandra, Connolly, Malcolm, Lartsev, Arseniy, Yager, Tom, Lara-Avila, Samuel, Kubatkin, Sergey, Kopylov, Sergey, Falko, Vladimir, Yakimova, Rositsa, Pearce, Ruth, Janssen, T.J. B. M., Tzaenchuk, Alexander, Smith, Charles G.

مصطلحات الفهرس: SiC epitaxial graphene; quantum hall effect; scanning gate microscopy; monolayer and bilayer graphene; resistance metrology; quantum point contact, Engineering and Technology, Teknik och teknologier, Article in journal, info:eu-repo/semantics/article, text

URL: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-108933
Nano letters (Print), 1530-6984, 2014, 14:6, s. 3369-3373