المؤلفون: Feng Su, Yifeng Hu, Xiaoqin Zhu, Li Li

المصدر: Journal of Materials Research and Technology, Vol 27, Iss , Pp 3079-3085 (2023)

مصطلحات موضوعية: Bending, Flexible film, Resistance drift, Mining engineering. Metallurgy, TN1-997

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2238785423025905; https://doaj.org/toc/2238-7854

URL الوصول: https://doaj.org/article/6a7a1633c639487588390bff6ea85d1a

المؤلفون: Zhenhao Sun, Yunjiang Yin, Baoguo Liu, Tao Xue, Qiang Zou

المصدر: Sensors, Vol 24, Iss 10, p 3232 (2024)

مصطلحات موضوعية: wearable, flexible electronics, stability, self-calibration compensation strategy, resistance drift, amphibious environment, Chemical technology, TP1-1185

Relation: https://www.mdpi.com/1424-8220/24/10/3232; https://doaj.org/toc/1424-8220; https://doaj.org/article/40f78969684349fb9eb474d44b294568

الاتاحة: https://doi.org/10.3390/s24103232
https://doaj.org/article/40f78969684349fb9eb474d44b294568

المؤلفون: Christian Stenz, Julian Pries, T. Wesley Surta, Michael W. Gaultois, Matthias Wuttig

المصدر: Advanced Science, Vol 10, Iss 36, Pp n/a-n/a (2023)

مصطلحات موضوعية: metavalent bonding, pair distribution function, phase change materials, resistance drift, reverse Monte‐Carlo simulation, structural relaxation, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2198-3844

URL الوصول: https://doaj.org/article/ab52ecc0abe94d5abce8e56fee9e8ca4

المؤلفون: Bin Chen, Xue‐Peng Wang, Fangying Jiao, Long Ning, Jiaen Huang, Jiatao Xie, Shengbai Zhang, Xian‐Bin Li, Feng Rao

المصدر: Advanced Science, Vol 10, Iss 25, Pp n/a-n/a (2023)

مصطلحات موضوعية: antimony, phase‐change memory, resistance drift, structural relaxation, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2198-3844

URL الوصول: https://doaj.org/article/39bda364588a47589a920eca3189c63c

المؤلفون: Ning Li, Charles Mackin, An Chen, Kevin Brew, Timothy Philip, Andrew Simon, Iqbal Saraf, Jin‐Ping Han, Syed Ghazi Sarwat, Geoffrey W. Burr, Malte Rasch, Abu Sebastian, Vijay Narayanan, Nicole Saulnier

المصدر: Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)

مصطلحات موضوعية: deep neural network, in‐memory computing, non‐volatile memory, phase change memory, resistance drift, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/21e46ddebffb4e81b334c7208c700cea

المؤلفون: Junbo Xu, Yifeng Hu

المصدر: Journal of Materials Research and Technology, Vol 18, Iss , Pp 4631-4640 (2022)

مصطلحات موضوعية: HfO2 interlayers, Sb/HfO2, Amorphous stability, Resistance drift, Electrical properties, Mining engineering. Metallurgy, TN1-997

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2238785422006342; https://doaj.org/toc/2238-7854

URL الوصول: https://doaj.org/article/38f25dd34b584c3fa23fe998a63aed63

المؤلفون: Guochun Chen, Fuxin Zhao, Yingjun Zeng, Zhixuan Su, Lida Xu, Chenhe Shao, Chao Wu, Gonghan He, Qinnan Chen, Yang Zhao, Daoheng Sun, Zhenyin Hai

مصطلحات موضوعية: Biophysics, Sociology, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, state response consistent, highly promising approach, engine turbine blade, 800 ° c, 496 ° c, 200 ° c, state strain tests, film strain gauge, compressive strain testing, temperature piezoresistive film, temperature strain transducer, temperature strain tests, temperature strain testing, temperature strain coefficient, resistance drift rate, poor surface compatibility, pt thick films, conformal pt thick, curved metallic substrate, temperature strain, thick films, curved surface, temperature parameters, oxidation resistance, conformal fabrication, curved surfaces

Relation: https://figshare.com/articles/journal_contribution/Conformal_Fabrication_of_Thick_Film_Platinum_Strain_Gauge_Via_Error_Regulation_Strategies_for_In_Situ_High-Temperature_Strain_Detection/24856067

الاتاحة: https://doi.org/10.1021/acsami.3c10866.s001
https://figshare.com/articles/journal_contribution/Conformal_Fabrication_of_Thick_Film_Platinum_Strain_Gauge_Via_Error_Regulation_Strategies_for_In_Situ_High-Temperature_Strain_Detection/24856067

المؤلفون: Feng Su, Yifeng Hu, Xiaoqin Zhu, Tianshu Lai

المصدر: Coatings; Volume 13; Issue 5; Pages: 927

مصطلحات موضوعية: In 2 Se 3 interlayers, resistance drift, thermal stability, phase change memory

وصف الملف: application/pdf

Relation: Thin Films; https://dx.doi.org/10.3390/coatings13050927

الاتاحة: https://doi.org/10.3390/coatings13050927

المؤلفون: Ivan Kalinin, Ilya Roslyakov, Dmitry Khmelenin, Kirill Napolskii

المصدر: Nanomaterials; Volume 13; Issue 1; Pages: 94

مصطلحات موضوعية: microheater, adhesion layer, anodic aluminium oxide, thermal stability, resistance drift

وصف الملف: application/pdf

Relation: Nanofabrication and Nanomanufacturing; https://dx.doi.org/10.3390/nano13010094

الاتاحة: https://doi.org/10.3390/nano13010094

المؤلفون: Taehyun Kwon, Muhammad Imran, Joon-Sung Yang

المصدر: IEEE Access, Vol 8, Pp 44006-44018 (2020)

مصطلحات موضوعية: Emerging memories, phase change memory (PCM), MLC PCM, resistance drift, error correction code (ECC), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8999530/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/4cf6415432d24b66b9efa9bf83b65326

المؤلفون: Yi Lv, Qian Wang, Houpeng Chen, Chenchen Xie, Shenglan Ni, Xi Li, Zhitang Song

المصدر: Micromachines; Volume 12; Issue 9; Pages: 1085

مصطلحات موضوعية: phase change memory, resistance drift, 2T2R, multilevel storage

وصف الملف: application/pdf

Relation: D1: Semiconductor Devices; https://dx.doi.org/10.3390/mi12091085

الاتاحة: https://doi.org/10.3390/mi12091085

المؤلفون: Capasso G., Zanuccoli M., Tallarico A. N., Fiegna C.

المساهمون: Capasso G., Zanuccoli M., Tallarico A.N., Fiegna C.

مصطلحات موضوعية: DC-DC converter, GaN HEMT, in-circuit characterization, ON-state resistance drift, reliability, threshold voltage shift

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001082241300001; volume:70; issue:11; firstpage:5807; lastpage:5813; numberofpages:7; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; https://hdl.handle.net/11585/954868; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85174820532; https://ieeexplore.ieee.org/document/10269789

الاتاحة: https://hdl.handle.net/11585/954868
https://doi.org/10.1109/TED.2023.3318865
https://ieeexplore.ieee.org/document/10269789

المؤلفون: Sparsh Mittal

المصدر: Computers; Volume 6; Issue 1; Pages: 8

مصطلحات موضوعية: reliability, non-volatile memory, PCM, STT-RAM, soft-error, read disturbance, write disturbance, resistance drift, error-correcting code (ECC)

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/computers6010008

الاتاحة: https://doi.org/10.3390/computers6010008

المؤلفون: Evan Ma, Wei Zhang

المصدر: Materials Today. 41:156-176

مصطلحات موضوعية: Resistance drift, business.industry, Computer science, Mechanical Engineering, 02 engineering and technology, Research opportunities, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Engineering physics, 0104 chemical sciences, Amorphous solid, Phase-change memory, Mechanics of Materials, Computer data storage, General Materials Science, 0210 nano-technology, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1da80f2765f92033399816cd537f4fcb
https://doi.org/10.1016/j.mattod.2020.07.016

المؤلفون: Muhammad Imran, Joon-Sung Yang, Taehyun Kwon

المصدر: IEEE Access, Vol 8, Pp 44006-44018 (2020)

مصطلحات موضوعية: Hardware_MEMORYSTRUCTURES, General Computer Science, business.industry, Computer science, Reliability (computer networking), Emerging memories, 020208 electrical & electronic engineering, General Engineering, 020206 networking & telecommunications, 02 engineering and technology, resistance drift, Phase-change memory, phase change memory (PCM), 0202 electrical engineering, electronic engineering, information engineering, MLC PCM, Overhead (computing), error correction code (ECC), General Materials Science, lcsh:Electrical engineering. Electronics. Nuclear engineering, Error detection and correction, business, lcsh:TK1-9971, Dram, Computer hardware, Parity bit

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b8e6727984c9b8d3cc47939d33ab52e
https://ieeexplore.ieee.org/document/8999530/

المؤلفون: Saeed Rashidi, Hamid Sarbazi-Azad, Majid Jalili

المصدر: ACM Computing Surveys. 52:1-38

مصطلحات موضوعية: 010302 applied physics, Resistance drift, Hardware_MEMORYSTRUCTURES, General Computer Science, Computer science, business.industry, 02 engineering and technology, 01 natural sciences, Cache management, 020202 computer hardware & architecture, Theoretical Computer Science, Resistive random-access memory, Phase-change memory, Short lifetime, Embedded system, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, business, Auxiliary memory, Wear leveling

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::83e2c6e8676bb021ada7b0455f4c2848
https://doi.org/10.1145/3332257

المؤلفون: Duygu Kuzum, Zhisheng Huang, Yuhan Shi, Sangheon Oh

المصدر: IEEE Electron Device Letters. 40:1325-1328

مصطلحات موضوعية: 010302 applied physics, Resistance drift, Artificial neural network, Computer science, Computer Science::Neural and Evolutionary Computation, Perceptron, 01 natural sciences, Convolutional neural network, Electronic, Optical and Magnetic Materials, Phase-change memory, 0103 physical sciences, Electrical and Electronic Engineering, Biological system, Pulse-width modulation, Degradation (telecommunications)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0767dd3849b1518cfcfb490209aea2e3
https://doi.org/10.1109/led.2019.2925832

المؤلفون: Tae Hoon Lee, Konstantinos Konstantinou, Stephen R. Elliott, Felix-Cosmin Mocanu

المساهمون: Konstantinou, Konstantinos [0000-0003-1291-817X], Mocanu, Felix C [0000-0001-6649-3029], Apollo - University of Cambridge Repository

المصدر: Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019)

مصطلحات موضوعية: 0301 basic medicine, Materials science, Band gap, Science, Alloy, General Physics and Astronomy, Interatomic potential, 02 engineering and technology, Electron, engineering.material, General Biochemistry, Genetics and Molecular Biology, Electronic states, 03 medical and health sciences, 0912 Materials Engineering, lcsh:Science, Resistance drift, Multidisciplinary, Condensed matter physics, General Chemistry, 021001 nanoscience & nanotechnology, Amorphous solid, 030104 developmental biology, engineering, lcsh:Q, 0210 nano-technology

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1356931ff7caf2893bdc8ed6b7f0e63
http://link.springer.com/article/10.1038/s41467-019-10980-w

المؤلفون: Martin eWimmer, Matthias eKaes, Christian eDellen, Martin eSalinga

المصدر: Frontiers in Physics, Vol 2 (2014)

مصطلحات موضوعية: phase change materials, chalcogenides, GeTe, amorphous semiconductors, resistance drift, Resistive memories, Physics, QC1-999

وصف الملف: electronic resource

Relation: http://journal.frontiersin.org/Journal/10.3389/fphy.2014.00075/full; https://doaj.org/toc/2296-424X

URL الوصول: https://doaj.org/article/704a8ee37a97445f9448ee02b550d08e

المؤلفون: Yimao Cai, Zongwei Wang, Qingyu Chen, Ru Huang, Lindong Wu, Yabo Qin, Zhizhen Yu

المصدر: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

مصطلحات موضوعية: Resistance drift, Nonlinear system, Artificial neural network, Computer science, Electronic engineering, Process (computing), Inference, Process optimization, Resistive random-access memory

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::445e0ca2126c88dcd8cb9b17b4f43385
https://doi.org/10.1109/edtm50988.2021.9421034