المؤلفون: Jiakai Liu (517920), Kepeng Song (1775857), Xiaopeng Zheng (1683742), Jun Yin (94374), Ke Xin Yao (1948699), Cailing Chen (1719463), Haoze Yang (3745759), Mohamed Nejib Hedhili (2590510), Wang Zhang (289732), Peigang Han (11591539), Omar F. Mohammed (1262202), Yu Han (251741), Osman M. Bakr (1262199)

مصطلحات موضوعية: Biophysics, Medicine, Cell Biology, Molecular Biology, Pharmacology, Biotechnology, Cancer, Computational Biology, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, Information Systems not elsewhere classified, withdrawing cyanamide molecules, metal halide perovskites, large part obscure, elementally resolved details, composition along regions, atomistic principles underlying, addressing fundamental questions, decomposition processes remain, nanoplates primarily stems, 3 , nanoplates enabled atomic, high beam stability, regrowth processes, beam stability, beam irradiation, work illustrates, unprecedented level, ultrahigh stability, two contributions

Relation: https://figshare.com/articles/journal_contribution/Cyanamide_Passivation_Enables_Robust_Elemental_Imaging_of_Metal_Halide_Perovskites_at_Atomic_Resolution/16847134

الاتاحة: https://doi.org/10.1021/acs.jpclett.1c02830.s001

المؤلفون: Li Chen (5749), Wei Lin (6475), Hangyang Chen (10669046), Houqiang Xu (6106262), Chenyu Guo (10669049), Zhibin Liu (4399105), Jianchang Yan (2572537), Jie Sun (74648), Huan Liu (281351), Jason Wu (360804), Wei Guo (86150), Junyong Kang (1412080), Jichun Ye (1580179)

مصطلحات موضوعية: Medicine, Cell Biology, Ecology, Sociology, Developmental Biology, Cancer, Plant Biology, Biological Sciences not elsewhere classified, Physical Sciences not elsewhere classified, quality control, regrowth processes, m-plane sapphire, epitaxial growth, High-quality AlN, growth mode, AlN layer, repeatable techniques, polarization field, HTA, AlN regrowth layer exhibits, anisotropic growth rate, lattice mismatch, transmission electron microscopy, high-efficiency semipolar UV semico., High-Temperature Annealing, AlN regrowth layer, AlN regrowth, Strain management, MOVPE Regrowth Semipolar III-nitrides, optoelectronic devices

Relation: https://figshare.com/articles/journal_contribution/Annihilation_and_Regeneration_of_Defects_in_112_2_Semipolar_AlN_i_via_i_High-Temperature_Annealing_and_MOVPE_Regrowth/14450042

الاتاحة: https://doi.org/10.1021/acs.cgd.1c00086.s001