المؤلفون: Fernando Silveira, Nahuel Vega, Emmanuel De La Fourniere, Felix Palumbo, Nahuel Muller, M.E. Debray, Sebastian M. Pazos, Fernando L. Aguirre, Andres Fontana

المصدر: CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET

مصطلحات موضوعية: Nuclear and High Energy Physics, Materials science, Radiation effects, Analog Single Event Transients (Aset), purl.org/becyt/ford/2.2 [https], Hardware_PERFORMANCEANDRELIABILITY, INGENIERÍAS Y TECNOLOGÍAS, 01 natural sciences, law.invention, Charge sharing, Superposition principle, Hardware_GENERAL, law, Microbeam, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Pulse Quenching, Ingeniería Eléctrica y Electrónica, Electrical and Electronic Engineering, Heavy Ion, Ingeniería Eléctrica, Ingeniería Electrónica e Ingeniería de la Información, Charge Sharing, Analogue electronics, 010308 nuclear & particles physics, business.industry, Transistor, purl.org/becyt/ford/2 [https], Nuclear Energy and Engineering, CMOS, Operational amplifier, Optoelectronics, Full custom, business

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3694240f7c5faa1a68b9e9979e936c38
https://ieeexplore.ieee.org/document/8675987/

المؤلفون: Andreou, Charalambos M., Javanainen, Arto, Rominski, Adrian, Virtanen, Ari, Liberali, Valentino, Calligaro, Cristiano, Prokofiev, Alexander V., Gerardin, Simone, Bagatin, Marta, Paccagnella, Alessandro, Gonzalez-Castano, Diego M., Gomez, Faustino, Nahmad, Daniel, Georgiou, Julius

المصدر: IEEE Transactions on Nuclear Science. 63(6):2950-2961

مصطلحات موضوعية: Analog single-event transient (ASET), bandgap voltage reference (BGR), charge sharing, CMOS analog integrated circuits, heavy ion, ionization, parasitic bipolar effect, pulse quenching, radiation effects, radiation hardening by design (RHBD), reference circuits, single-event effects (SEE), single-event transient (SET), space electronics, voltage reference

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-315921

المؤلفون: Guillaume Hubert, Laurent Artola

المساهمون: ONERA - The French Aerospace Lab [Toulouse], ONERA

المصدر: Semiconductor Science and Technology
Semiconductor Science and Technology, IOP Publishing, 2016, 31 (124002), p. 1-9. ⟨10.1088/0268-1242/31/12/124002⟩

مصطلحات موضوعية: Materials science, Silicon on insulator, Nanotechnology, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, HEAVY IONS, 0103 physical sciences, Materials Chemistry, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, PULSE QUENCHING, SILICON-ON-INSULATOR, VOLTAGE SCALING, Scaling, 010302 applied physics, Quenching, Very-large-scale integration, 010308 nuclear & particles physics, business.industry, Condensed Matter Physics, [PHYS.PHYS.PHYS-SPACE-PH]Physics [physics]/Physics [physics]/Space Physics [physics.space-ph], Electronic, Optical and Magnetic Materials, Pulse (physics), SINGLE EVENT TRANSIENT, Soft error, CMOS, SIMULATION, Optoelectronics, MULTI-COLLECTION, business, Voltage, Hardware_LOGICDESIGN

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d483a4069d9a815a877b38bc988922d
https://hal.archives-ouvertes.fr/hal-01430348

المؤلفون: Artola, Laurent, Hubert, Guillaume

المساهمون: ONERA - The French Aerospace Lab Toulouse, ONERA

المصدر: ISSN: 0268-1242.

مصطلحات موضوعية: SINGLE EVENT TRANSIENT, MULTI-COLLECTION, PULSE QUENCHING, SILICON-ON-INSULATOR, HEAVY IONS, VOLTAGE SCALING, SIMULATION, [PHYS.PHYS.PHYS-SPACE-PH]Physics [physics]/Physics [physics]/Space Physics [physics.space-ph]

Relation: hal-01430348; https://hal.science/hal-01430348

الاتاحة: https://hal.science/hal-01430348
https://doi.org/10.1088/0268-1242/31/12/124002

Thesis Advisors: Chen, Li

مصطلحات موضوعية: dynamic logic, single event effect, pulse quenching

الاتاحة: http://hdl.handle.net/10388/ETD-2015-09-2253

المؤلفون: Chatterjee, I., Narasimham, B., Mahatme, N. N., Bhuva, B. L., Reed, R. A., Schrimpf, R. D., Wang, J. K., Vedula, N., Bartz, B., Monzel, C.

المصدر: Chatterjee , I , Narasimham , B , Mahatme , N N , Bhuva , B L , Reed , R A , Schrimpf , R D , Wang , J K , Vedula , N , Bartz , B & Monzel , C 2014 , ' Impact of technology scaling on SRAM soft error rates ' , IEEE Transactions on Nuclear Science , vol. 61 , no. 6 , 6957610 , pp. 3512-3518 . https://doi.org/10.1109/TNS.2014.2365546

مصطلحات موضوعية: Dual well, multiple-node charge collection, pulse quenching, reinforcing charge collection, scaling trends, single event upset reversal (SEUR), soft error, static random access memories (SRAM), triple-well

Relation: https://research-information.bris.ac.uk/en/publications/b1808eee-8db3-4c50-968a-14b91f568711

الاتاحة: https://hdl.handle.net/1983/b1808eee-8db3-4c50-968a-14b91f568711
https://research-information.bris.ac.uk/en/publications/b1808eee-8db3-4c50-968a-14b91f568711
https://doi.org/10.1109/TNS.2014.2365546
http://www.scopus.com/inward/record.url?scp=84919790042&partnerID=8YFLogxK

المؤلفون: Fontana, Andrés, Pazos, Sebastián Matías, Aguirre, Fernando Leonel, Vega, Nahuel Agustín, Muller, Nahuel, De la Fourniere, Emmanuel, Silveira, Fernando, Debray, Mario Ernesto, Palumbo, Félix Roberto Mario

مصطلحات موضوعية: Analog Single Event Transients (Aset), Radiation effects, Microbeam, Pulse Quenching, Heavy Ion, Charge Sharing, https://purl.org/becyt/ford/2.2, https://purl.org/becyt/ford/2

وصف الملف: application/pdf

Relation: info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/8675987/; http://hdl.handle.net/11336/121724; Fontana, Andrés; Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Vega, Nahuel Agustín; Muller, Nahuel; et al.; Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp; Institute of Electrical and Electronics Engineers Inc.; IEEE Transactions on Nuclear Science; 66; 7; 3-2019; 1473-1482; CONICET Digital; CONICET

الاتاحة: http://hdl.handle.net/11336/121724

المؤلفون: Li, Mulong

المساهمون: Chen, Li, Deters, Ralph, Dinh, Anh, Wahid, Khan

مصطلحات موضوعية: dynamic logic, single event effect, pulse quenching

Relation: http://hdl.handle.net/10388/ETD-2015-09-2253; TC-SSU-2015092253

الاتاحة: http://hdl.handle.net/10388/ETD-2015-09-2253