المؤلفون: Seo-Hyun Moon (11597334), Soo-Hyun Bae (11597337), Young Ha Kwon (11597340), Nak-Jin Seong (4174894), Jong-Heon Yang (1644727), Yong-Hae Kim (6913895), Kyu-Jeong Choi (11361633), Chi-Sun Hwang (1644721), Sung-Min Yoon (1644733)

مصطلحات موضوعية: Biochemistry, Medicine, Pharmacology, Biotechnology, Plant Biology, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, oxygen vacancy within, cationic composition control, – ga precursor, atomic layer deposition, stack process conditions, process conditions using, ga ratio increased, ald cyclic ratios, film transistors using, active channels prepared, 3 , 2 , stack formation processes, ald igzo thin, stack process, ga ratios, ga ratio, film transistors, ald processes, device using, protection layer, igzo film

Relation: https://figshare.com/articles/journal_contribution/Combination_of_Gate-Stack_Process_and_Cationic_Composition_Control_for_Boosting_the_Performance_of_Thin-Film_Transistors_Using_In_Ga_Zn_O_Active_Channels_Prepared_by_Atomic_Layer_Deposition/16862115

الاتاحة: https://doi.org/10.1021/acsaelm.1c00689.s001