المؤلفون: Fernandez-Garrido, Sergio, Ramsteiner, Manfred, Galves, Lauren A., Sinito, Chiara, Corfdir, Pierre, Schiaber, Ziani de Souza, Lopes, Joao Marcelo J., Geelhaar, Lutz, Brandt, Oliver, Chyi, J. I., Fujioka, H., Morkoc, H.

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: group-III nitrides, III-V semiconductors, nanowire, polarity junction, polarity inversion, polarity-induced selective area epitaxy

Relation: Gallium Nitride Materials And Devices Xiii; http://dx.doi.org/10.1117/12.2288233; Gallium Nitride Materials And Devices Xiii. Bellingham: Spie-int Soc Optical Engineering, v. 10532, 11 p., 2018.; http://hdl.handle.net/11449/186320; WOS:000452798100018

الاتاحة: http://hdl.handle.net/11449/186320
https://doi.org/10.1117/12.2288233