المؤلفون: Soyeon Seo, Jinho Lee, Yongho Lee, Hyunchol Shin

المصدر: Sensors, Vol 24, Iss 4, p 1087 (2024)

مصطلحات موضوعية: phase shifter, phase calibration technique, gallium nitride (GaN), high electron mobility transistor (HEMT), 28 GHz, Chemical technology, TP1-1185

Relation: https://www.mdpi.com/1424-8220/24/4/1087; https://doaj.org/toc/1424-8220; https://doaj.org/article/8b263b1e6bf94554b401aaf73841ca77

الاتاحة: https://doi.org/10.3390/s24041087
https://doaj.org/article/8b263b1e6bf94554b401aaf73841ca77