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المؤلفون: Ronald D. Schrimpf, Alessandro Paccagnella, Edoardo Lerario, Szymon Kulis, Daniel M. Fleetwood, Federico Faccio, Simone Gerardin, Stefano Bonaldo, Stefano Michelis, Giulio Borghello
مصطلحات موضوعية: lightly doped drain spacers, gamma-ray effects, ionisation, isolation technology, MOSFET, passivation, radiation hardening (electronics), semiconductor doping, X-ray effects, TID-induced damage, radiation response, complementary metal- oxide-semiconductor gate oxides, deep-sub-micrometer technologies, ionization mechanisms, ultrahigh total ionizing dose experiments, passivation oxides, linear bipolar technologies, enhanced low-dose rate sensitivity, CMOS technologies, radiation sources, shallow trench isolation oxide, electric field, ELDRS, X-rays, γ-rays, size 65 nm, Degradation, Sensitivity, Electric fields, Radiation effects, Deep-sub-micrometer metal–oxide–semiconductor (MOS), enhanced low-dose-rate sensitivity (ELDRS), total ionizing dose (TID) effects, 02 engineering and technology, 01 natural sciences, law.invention, law, Shallow trench isolation, Transistor, Deep-sub-micrometer metal-oxide-semiconductor (MOS), 021001 nanoscience & nanotechnology, CMOS, Absorbed dose, Optoelectronics, 0210 nano-technology, Nuclear and High Energy Physics, Materials science, Passivation, Radiation, 0103 physical sciences, Electrical and Electronic Engineering, 010308 nuclear & particles physics, business.industry, Doping, Nuclear Energy and Engineering, business