المؤلفون: G. Unterbörsch, A. Umbach, M. Leone

المساهمون: Publica

المصدر: Journal of Applied Physics. 81:2511-2516

مصطلحات موضوعية: 50 GHz, Fabrication, Materials science, iii-v semiconductors, metal-organic vapor-phase epitaxy, enhanced diffusion component, General Physics and Astronomy, detector bandwidth, Integrated circuit, RC time constant, optical waveguides, high-frequency behavior, Waveguide (optics), law.invention, Gallium arsenide, high-speed detectors, chemistry.chemical_compound, optical butt coupling, Optics, law, high quantum efficiency, waveguide integrated photodiodes, carrier mobility, integrated optoelectronics, partially masked substrates, vapour phase epitaxial growth, quantum efficiency, business.industry, GaInAsP/InP material system, Detector, inp, 4 mum, smallest detector sizes, selective embedded growth, gallium arsenide, semiconductor growth, Photodiode, indium compounds, p-i-n photodiodes, chemistry, Optoelectronics, optoelectronical integrated circuits, Quantum efficiency, 8 GHz, gallium compounds, business, GaInAsP-InP

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4869491f2c22d2061c5dde6211ca8fe2
https://doi.org/10.1063/1.363959