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1Academic JournalConsiderations on the Development of High-Power Density Inverters for Highly Integrated Motor Drives
المؤلفون: Yury Mikhaylov, Ahmed Aboelhassan, Giampaolo Buticchi, Michael Galea
المصدر: Electronics, Vol 13, Iss 2, p 355 (2024)
مصطلحات موضوعية: three-phase inverter, parallel MOSFETs, silicon carbide (SiC), Electronics, TK7800-8360
Relation: https://www.mdpi.com/2079-9292/13/2/355; https://doaj.org/toc/2079-9292; https://doaj.org/article/ee822bf9b18a4ddb9dca32ed9cb99212
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2Conference
المؤلفون: Race, Salvatore, Nagel, Michel, Brandl, Anja, Kovacevic-Badstuebner, Ivana, id_orcid:0 000-0001-6960-2470, Popescu, Dan, Popescu, Bogdan, Grossner, Ulrike, id_orcid:0 000-0002-2495-8550
المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
مصطلحات موضوعية: SiC power MOSFET, gate resistance, switching behavior, parallel MOSFETs, device variability
Relation: info:eu-repo/semantics/altIdentifier/isbn/979-8-3503-9482-5; info:eu-repo/semantics/altIdentifier/isbn/979-8-3503-9483-2; info:eu-repo/semantics/altIdentifier/wos/001270353500127; http://hdl.handle.net/20.500.11850/700138
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3Academic Journal
المؤلفون: Wikkerink, D.P. (author), Gagic, Mladen (author), Mor, A. R. (author), Polinder, H. (author), Ross, Robert (author)
مصطلحات موضوعية: Converter, cryocooled electronics, cryostat, degaussing, high temperature superconductors, magnetic signature, parallel MOSFETs, ReBCO
Relation: http://www.scopus.com/inward/record.url?scp=85181080751&partnerID=8YFLogxK; IEEE Transactions on Applied Superconductivity--1051-8223--1be86713-a06a-4ea3-841d-d59f7e9041b1; http://resolver.tudelft.nl/uuid:cecaa425-5484-40fa-8c27-a130fa014fe2; https://doi.org/10.1109/tasc.2023.3337767
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4
المؤلفون: Cheng Zhao, Fan Zhang, Jianpeng Wang, Binyu Wang, Jia Lixin, Christoph Friedrich Bayer, Fengtao Yang, Jan Abraham Ferreira, Laili Wang
المساهمون: Power Electronics, Digital Society Institute, Publica
المصدر: IEEE Transactions on Power Electronics, 37(2):9520279, 1615-1629. IEEE
مصطلحات موضوعية: Materials science, multichip module, Thermal resistance, packaging, Silicon carbide, chemistry.chemical_compound, MOSFET, Reliability (semiconductor), Planar, Power semiconductor device, Multichip modules, Electrical and Electronic Engineering, multichip power module, Electronic packaging thermal management, parallel MOSFETs, Substrates, business.industry, Electrical engineering, chemistry, Power module, 2023 OA procedure, business, Cooling, Switches, Decoupling (electronics)
وصف الملف: application/pdf
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5
المؤلفون: Djurre Wikkerink, Armando Rodrigo Mor, Henk Polinder, Robert Ross
المصدر: IEEE Access, 10
مصطلحات موضوعية: degaussing, magnetic signature, General Computer Science, Resistance, General Engineering, Coils, cryocooled electronics, Capacitors, Converters, Topology, MOSFET, High-temperature superconductors, General Materials Science, Converter, cryostat, HTS, Electrical and Electronic Engineering, parallel MOSFETs
وصف الملف: application/pdf
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6Academic Journal
المؤلفون: Wikkerink, D.P. (author), Mor, A. R. (author), Polinder, H. (author), Ross, Robert (author)
مصطلحات موضوعية: Capacitors, Coils, Converter, Converters, cryocooled electronics, cryostat, degaussing, High-temperature superconductors, HTS, magnetic signature, MOSFET, parallel MOSFETs, Resistance, Topology
Relation: http://www.scopus.com/inward/record.url?scp=85144745357&partnerID=8YFLogxK; IEEE Access--2169-3536--10db88dc-1095-4941-a22e-625ab24bc7b9; http://resolver.tudelft.nl/uuid:f82c2435-cc0e-4118-87ec-99d78c983d6d; https://doi.org/10.1109/ACCESS.2022.3227508
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7Academic Journal
المؤلفون: Jiang, Y, Shen, Y, Shillaber, L, Jiang, C, Long, T
مصطلحات موضوعية: Switches, Capacitance, Junctions, Inductors, Zero voltage switching, MOSFET, Switching loss, Dual operation modes, parallel MOSFETs, zero-current switching (ZCS), zero-voltage switching (ZVS)
وصف الملف: application/pdf
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8Academic Journal
المؤلفون: Yang, F., Lixin, J., Wang, L., Zhang, F., Wang, B., Zhao, C., Wang, J., Bayer, C.F., Ferreira, J.A.
مصطلحات موضوعية: cooling, electronic packaging thermal management, MOSFET, multichip module, multichip power module, packaging, parallel MOSFETs, silicon carbide, substrates, switches
Time: 670, 621, 620, 530
Relation: IEEE transactions on power electronics; https://publica.fraunhofer.de/handle/publica/270283