المؤلفون: Gang Wang (36685), Jinju Zheng (2131303), Boyi Xu (10429389), Chaonan Zhang (6325781), Yue Zhu (306128), Zhi Fang (1261068), Zuobao Yang (2891468), Ming-Hui Shang (1975048), Weiyou Yang (1418827)

مصطلحات موضوعية: Biophysics, Cell Biology, Physiology, Biotechnology, Evolutionary Biology, Marine Biology, Cancer, Space Science, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Physical Sciences not elsewhere classified, Valance Band Edge, Ni atom increases, SQS, conduction band edge, Tailored Electronic Band Gap, p-type semiconductor candidate, VBM, Ni t 2 g states, doping electron-poor S, gap, majority, S 3 p, NiO, S density, minority

Relation: https://figshare.com/articles/journal_contribution/Tailored_Electronic_Band_Gap_and_Valance_Band_Edge_of_Nickel_Oxide_via_p_Type_Incorporation/14298207

الاتاحة: https://doi.org/10.1021/acs.jpcc.1c01463.s001