المؤلفون: SHAN Ziyang, JIAO Xuesheng, YUAN Daqing

المصدر: Yuanzineng kexue jishu, Vol 58, Iss 11, Pp 2402-2411 (2024)

مصطلحات موضوعية: gallium oxide, p-type doping, proton irradiation, Nuclear engineering. Atomic power, TK9001-9401, Nuclear and particle physics. Atomic energy. Radioactivity, QC770-798

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1000-6931

URL الوصول: https://doaj.org/article/09747ff608c94dd0b4badc7baff4c5cf

المؤلفون: Yuyan Wang, Sihao Xia, Yu Diao, Hongkai Shi, Xian Wu, Yuting Dai, Caixia Kan, Daning Shi

المصدر: Journal of Materials Research and Technology, Vol 30, Iss , Pp 5512-5522 (2024)

مصطلحات موضوعية: AlxGa1-xN nanowires, p-type doping, Bandgap, Effective mass, Bond population, Mining engineering. Metallurgy, TN1-997

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2238785424009943; https://doaj.org/toc/2238-7854

URL الوصول: https://doaj.org/article/8eb01cb7fa1240779aaad4762ee87bbe

المؤلفون: Elzbieta Guziewicz, Sushma Mishra, Matteo Amati, Luca Gregoratti, Oksana Volnianska

المصدر: Nanomaterials, Vol 15, Iss 1, p 30 (2024)

مصطلحات موضوعية: zinc oxide, p-type doping, photoelectron spectroscopy, Density Functional Theory calculations, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-4991/15/1/30; https://doaj.org/toc/2079-4991

URL الوصول: https://doaj.org/article/bab31f0bda3c4fd296461461c589f64f

المؤلفون: Adán de Jesús Bautista-Morantes, Carlos Ordulio Calderón-Carvajal, Jairo Alberto Gómez-Cuaspud, Enrique Vera-López

المصدر: Materials Science for Energy Technologies, Vol 7, Iss , Pp 335-348 (2024)

مصطلحات موضوعية: Perovskite, P-type doping, Bandgap, Conductivity, Oxygen vacancy, Materials of engineering and construction. Mechanics of materials, TA401-492, Energy conservation, TJ163.26-163.5

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2589299124000077; https://doaj.org/toc/2589-2991

URL الوصول: https://doaj.org/article/4295df3c5d1a41b6934503f47ee99415

المؤلفون: Van Tu Vu, Minh Chien Nguyen, Whan Kyun Kim, Van Dam Do, Vu Khac Dat, Woo Jong Yu

المصدر: Small Structures, Vol 5, Iss 5, Pp n/a-n/a (2024)

مصطلحات موضوعية: bilayers, chemical vapor deposition growths, exfoliations, p‐type doping, transition metal dichalcogenide heterostructures, Physics, QC1-999, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2688-4062

URL الوصول: https://doaj.org/article/4a62d5db996b4c5bae5887b54d71dd12

المؤلفون: L. O. Agbolade, A. K. Y. Dafhalla, D. M. I. Zayan, T. Adam, A. Chik, A. A. Adewale, S. C. B. Gopinath, U. Hashim

المصدر: Journal of Nigerian Society of Physical Sciences, Vol 6, Iss 1 (2024)

مصطلحات موضوعية: Graphene, P-type doping, Dielectrics, DFT, Semiconducting devices, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://journal.nsps.org.ng/index.php/jnsps/article/view/1730; https://doaj.org/toc/2714-2817; https://doaj.org/toc/2714-4704

URL الوصول: https://doaj.org/article/b8b3ad27c0fa42448d8ee2ecf80862c8

المؤلفون: Kumar, Ashutosh, Berg, Martin, Wang, Qin, Uzuhashi, Jun, Ohkubo, Tadakatsu, Salter, Michael, Ramvall, Peter

المصدر: Journal of Applied Physics. 134(3)

مصطلحات موضوعية: Chemical activation, Gallium nitride, Hall mobility, Hole concentration, Hole mobility, III-V semiconductors, Magnesium compounds, Acceptor activation, Activation annealing, Ambient gas, Compensation effects, Free hole concentration, GaN layers, Growth pressure, Mg-doping, P-type doping, XRD, Annealing

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-65990
https://doi.org/10.1063/5.0139114

المؤلفون: Yiting Li, Yang Shen, Qianglong Fang, Shuqin Zhang, Xiaodong Yang, Liang Chen, Shangzhong Jin

المصدر: Journal of Materials Research and Technology, Vol 19, Iss , Pp 2402-2409 (2022)

مصطلحات موضوعية: Al0.5Ga0.5N nanowire, p-type doping, Interstitial doping, Substitutional doping, Mining engineering. Metallurgy, TN1-997

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2238785422008808; https://doaj.org/toc/2238-7854

URL الوصول: https://doaj.org/article/a283f1f26d9d447cac94742f24eb582a

المؤلفون: Jae‐Hyeok Cho, Ji‐Young Go, Tan Tan Bui, Seunguk Mun, Yunseok Kim, Kyunghan Ahn, Yong‐Young Noh, Myung‐Gil Kim

المصدر: Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)

مصطلحات موضوعية: defect passivation, metal halide perovskites, p‐type doping, thin‐film transistor, xanthates, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/6e4269ce3bbf48f2866b97c974225b0f

المؤلفون: Argyris Tilemachou, Matthew Zervos, Andreas Othonos, Theodoros Pavloudis, Joseph Kioseoglou

المصدر: Electronic Materials, Vol 3, Iss 1, Pp 15-26 (2022)

مصطلحات موضوعية: copper nitride, copper iodide, semiconductors, p-type doping, p-n heterojunctions, Instruments and machines, QA71-90

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2673-3978/3/1/2; https://doaj.org/toc/2673-3978

URL الوصول: https://doaj.org/article/a6f1195ec53c4652a927f4642240effb

المؤلفون: Yang, Jiali, Liu, Yu, Wang, En-Yang, Pang, Jinbo, Huang, Shirong, Gemming, Thomas, Bi, Jinshun, Bachmatiuk, Alicja, Jia, Hao, Hu, Shu-Xian, Jiang, Chongyun, Liu, Hong, Cuniberti, Gianaurelio, Zhou, Weijia, Rümmeli, Mark H.

مصطلحات موضوعية: two-dimensional (2D) materials, Lewis acid treatment, p-type doping, field-effect transistors, transfer characteristic

Relation: Nano Research; https://doi.org/10.1007/s12274-023-6196-7; Nano Research. 2023.; http://hdl.handle.net/10084/154858; 001116536900002

الاتاحة: http://hdl.handle.net/10084/154858
https://doi.org/10.1007/s12274-023-6196-7

المؤلفون: Xiaoming Yang, Taiqiang Cao, Xiaohua Zhang, Tianqian Li, Hang Luo

المصدر: Micromachines; Volume 14; Issue 4; Pages: 887

مصطلحات موضوعية: silicon-on-insulator, MOS devices, deep depletion, breakdown voltage, transient breakdown voltage, step P-type doping buried layer

وصف الملف: application/pdf

Relation: D1: Semiconductor Devices; https://dx.doi.org/10.3390/mi14040887

الاتاحة: https://doi.org/10.3390/mi14040887

المؤلفون: Kakanakova-Georgieva, Anelia, 1970, Papamichail, Alexis, 1990, Stanishev, Vallery, 1970, Darakchieva, Vanya, 1971

المصدر: Physica status solidi. B, Basic research. 259(10)

مصطلحات موضوعية: gallium nitride, hydrogen, metal-organic chemical vapor deposition, p-type doping

وصف الملف: electronic

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-186495
https://liu.diva-portal.org/smash/get/diva2:1677999/FULLTEXT01.pdf

المؤلفون: Sangyeon Pak

المصدر: Nanomaterials; Volume 12; Issue 17; Pages: 2893

مصطلحات موضوعية: MoS 2 monolayer, copper chloride, transition metal chloride, p-type doping, spin coating

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/nano12172893

الاتاحة: https://doi.org/10.3390/nano12172893

المؤلفون: Siyabonga B. Mdluli, Morongwa E. Ramoroka, Sodiq T. Yussuf, Kwena D. Modibane, Vivian S. John-Denk, Emmanuel I. Iwuoha

المصدر: Polymers; Volume 14; Issue 4; Pages: 716

مصطلحات موضوعية: heterojunction solar cell, hole transporting layer, n- and p-type doping, organic photovoltaic cell, π -conjugated polymer

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/polym14040716

الاتاحة: https://doi.org/10.3390/polym14040716

المؤلفون: Yuliya Spivak, Ekaterina Muratova, Vyacheslav Moshnikov, Alexander Tuchkovsky, Igor Vrublevsky, Nikita Lushpa

المصدر: Materials; Volume 15; Issue 3; Pages: 990

مصطلحات موضوعية: organometallic perovskites, photovoltaic applications, grain boundaries, amines, p-type doping, carbon nanotubes, electrical conductivity

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/ma15030990

الاتاحة: https://doi.org/10.3390/ma15030990

المؤلفون: Ramos, Raul, Godoy, Marcio Peron Franco de, Rangel, Elidiane Cipriano, Cruz, Nilson Cristino da, Durrant, Steven F., Bortoleto, José Roberto Ribeiro

المصدر: Materials Research. January 2020 23(3)

مصطلحات موضوعية: zinc oxide, p-type doping, co-doping, ZnO:Al-N, room temperature

وصف الملف: text/html

URL الوصول: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000300221

المؤلفون: Krishna, Athith

مصطلحات موضوعية: Electrical engineering, Materials Science, acceptors, III-nitrides, p-type doping, semiconductors, superlattices, traps

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/1xg2w410

المؤلفون: Marcelo Rizzo Piton, Teemu Hakkarainen, Joonas Hilska, Eero Koivusalo, Donald Lupo, Helder Vinicius Avanço Galeti, Yara Galvão Gobato, Mircea Guina

المصدر: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-7 (2019)

مصطلحات موضوعية: Nanowires, GaAs, p-type doping, Ohmic contacts, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-019-3175-8; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/f5a3ec259f604fb490c08b3066b39099

المساهمون: Noufi, R

المصدر: Conference: Prepared for the 31st IEEE Photovoltaics Specialists Conference and Exhibition, Lake Buena Vista, FL (US), 01/03/2005--01/07/2005; Other Information: PBD: 1 Feb 2005

وصف الملف: Medium: ED; Size: 8 pages

URL الوصول: http://www.osti.gov/scitech/servlets/purl/15016401