المؤلفون: Kerstin Schneider-Hornstein, Bernhard Goll, Horst Zimmermann

المصدر: IEEE Photonics Journal, Vol 15, Iss 3, Pp 1-9 (2023)

مصطلحات موضوعية: CMOS circuits, integrated optoelectronics, p-i-n photodiodes, capacitive-feedback transimpedance amplifier, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10135079/; https://doaj.org/toc/1943-0655

URL الوصول: https://doaj.org/article/be495da02d5844f0a8d54bc6bd4ccca9

المؤلفون: Ruijun Zhang, Jia Liu, Geng Liu, Liang Yao, Ying Liu, Rongdun Hong, Feng Zhang

المصدر: Electronics Letters, Vol 59, Iss 18, Pp n/a-n/a (2023)

مصطلحات موضوعية: p‐i‐n photodiodes, ultraviolet detectors, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://doaj.org/toc/0013-5194; https://doaj.org/toc/1350-911X

URL الوصول: https://doaj.org/article/a5059769c7614d9196d04f4f1558969f

المؤلفون: Benfante, Marco, Reverchon, Jean-Luc, Gilard, Olivier, Demiguel, Stéphane, Virmontois, Cédric, Durnez, Clémentine, Dartois, Thierry, Goiffon, Vincent

المساهمون: Alcatel-Thales III-V Lab (III-V Lab ), THALES France, Institut Supérieur de l'Aéronautique et de l'Espace (ISAE-SUPAERO), Centre National d'Études Spatiales Toulouse (CNES), Thales Alenia Space Cannes (TAS), IEEE Transactions on Nuclear Science

المصدر: ISSN: 0018-9499.

مصطلحات موضوعية: electron-hole recombination, gallium arsenide, III-V semiconductors, indium compounds, p-i-n photodiodes, photodiodes, proton effects, [INFO.INFO-TS]Computer Science [cs]/Signal and Image Processing

Relation: hal-04293100; https://hal.science/hal-04293100; https://hal.science/hal-04293100/document; https://hal.science/hal-04293100/file/14390-FINAL%20VERSION.pdf

الاتاحة: https://hal.science/hal-04293100
https://hal.science/hal-04293100/document
https://hal.science/hal-04293100/file/14390-FINAL%20VERSION.pdf
https://doi.org/10.1109/TNS.2023.3244416

المؤلفون: Yanxia Ma, Qinghui Chen, Shuyan Wang, Shalini Sharma, Shaweta Khanna

المصدر: IET Collaborative Intelligent Manufacturing, Vol 3, Iss 3, Pp 205-214 (2021)

مصطلحات موضوعية: avalanche photodiodes, optical fibre communication, error statistics, p‐i‐n photodiodes, Manufactures, TS1-2301, Technological innovations. Automation, HD45-45.2

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2516-8398

URL الوصول: https://doaj.org/article/f571111e7ace4f1d93b1cbc1ca8d183e

المساهمون: Vydyanath, Honnavalli

وصف الملف: Medium: ED

URL الوصول: http://www.osti.gov/scitech/servlets/purl/807021

المؤلفون: Abdulwahid, Omar S., Kostakis, Ioannis, Muttlak, Saad G., Sexton, James, Ian, Kawa, Missous, Mohamed

المصدر: Abdulwahid , O S , Kostakis , I , Muttlak , S G , Sexton , J , Ian , K & Missous , M 2019 , ' Physical modelling of InGaAs-InAlAs APD and PIN photodetectors for >25 Gb/s data rate applications ' , IET Optoelectronics , vol. 13 , no. 1 , pp. 40-45 . https://doi.org/10.1049/iet-opt.2018.5030

مصطلحات موضوعية: aluminium compounds, avalanche photodiodes, gallium arsenide, III-V semiconductors, indium compounds, integrated optoelectronics, optimisation, photodetectors, p-i-n photodiodes

وصف الملف: application/vnd.openxmlformats-officedocument.wordprocessingml.document

الاتاحة: https://research.manchester.ac.uk/en/publications/7be8a819-4ee4-405a-9db7-3e2340a62bde
https://doi.org/10.1049/iet-opt.2018.5030
https://pure.manchester.ac.uk/ws/files/90876243/Author_Accepted_manuscript_24_08_2018.docx
http://www.scopus.com/inward/record.url?scp=85062092175&partnerID=8YFLogxK

المؤلفون: Shannon M. Madison, Jonathan Klamkin, Douglas C. Oakley, Antonio Napoleone, Jason J. Plant, Paul W. Juodawlkis

المصدر: IEEE Photonics Journal, Vol 3, Iss 4, Pp 676-685 (2011)

مصطلحات موضوعية: p-i-n photodiodes, optical waveguides, optical confinement factor, waveguide photodiode, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/5929483/; https://doaj.org/toc/1943-0655

URL الوصول: https://doaj.org/article/dc445d3e8f9240e783c339ccaceebcac

المؤلفون: Naughton, A, Lai, CP, Talli, G, Vaernewyck, Renato, Yin, Xin, Bauwelinck, Johan, Qiu, Xing-Zhi, Maxwell, G, Smith, DW, Borghesani, A, Cronin, R, Grobe, K, Eiselt, M, Parsons, N, Kehayas, E, Townsend, PD

المصدر: ELECTRONICS LETTERS ; ISSN: 0013-5194

مصطلحات موضوعية: Technology and Engineering, arrayed reflective electroabsorption modulator-based photonic integrated circuit, performance evaluation, low-power driver array, PIN photodiode array, integrated arrayed waveguide grating, power consumption, next generation optical access networks, BER performance, standard single mode fibre, mobile fronthaul, bit rate 80 Gbit, bit rate 82, 4 Gbit, IBCN, passive optical networks, optical transmitters, optical receivers, wavelength division multiplexing, arrayed waveguide gratings, p-i-n photodiodes, electro-optical modulation, integrated optics, low-power electronics, driver circuits, multichannel integrated transmitter, multichannel integrated receiver, wavelength-division multiplexing passive optical network, fronthauling applications

وصف الملف: application/pdf

Relation: https://biblio.ugent.be/publication/8166175; http://hdl.handle.net/1854/LU-8166175; http://dx.doi.org/10.1049/el.2015.4441; https://biblio.ugent.be/publication/8166175/file/8166375

الاتاحة: https://biblio.ugent.be/publication/8166175
http://hdl.handle.net/1854/LU-8166175
https://doi.org/10.1049/el.2015.4441
https://biblio.ugent.be/publication/8166175/file/8166375

المؤلفون: PEREVERTAYLO, Vladymyr, POPOV, Vladymyr, POKANEVICH, Aleksej, KARENGIN, Vitaliy

مصطلحات موضوعية: p-i-n photodiodes, high-resistivity silicon, MIS structures, silicon

وصف الملف: application/pdf

Relation: PEREVERTAYLO, Vladymyr, POPOV, Vladymyr, POKANEVICH, Aleksej et al. Characterization of silicon p-i-n photodiode electrophysical parameters. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 166-168. ISBN 9975-66-038-X.; 9975-66-038-X; http://repository.utm.md/handle/5014/4892

الاتاحة: http://repository.utm.md/handle/5014/4892

المؤلفون: Baier, N., Gravrand, O., Lobre, C., Boulade, O., Kerlain, A., Péré-Laperne, N.

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département d'Astrophysique (ex SAP) (DAP), Institut de Recherches sur les lois Fondamentales de l'Univers (IRFU), Université Paris-Saclay-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), LYNRED, The European Space Agency for their support of some parts of this work., ANR-11-LABX-0013,FOCUS,Des détecteurs pour Observer l'Univers(2011)

المصدر: ISSN: 0361-5235.

مصطلحات موضوعية: IR sensors, HgCdTe, P-on-n photodiodes, dark current, IR space applications, very long-wavelength IR, [SPI]Engineering Sciences [physics], [INFO.INFO-TS]Computer Science [cs]/Signal and Image Processing, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics

الاتاحة: https://cea.hal.science/cea-04797756
https://doi.org/10.1007/s11664-019-07299-z

المؤلفون: Lioliou, G., Meng, X., Ng, J.S., Barnett, A.M.

المصدر: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 813:1-9

مصطلحات موضوعية: p-i-n photodiodes, Visible and near infrared responsivity, X-ray spectroscopy, QC, QB, Gallium Arsenide

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::54743dd3975b25b1d7f4d46d77ea36f9

المؤلفون: Péré-Laperne, N., Baier, N., Cervera, C., Santailler, J. L., Lobre, C., Cassillo, C., Berthoz, J., Destefanis, V., Giao, D. Sam, Lamoure, A.

المساهمون: SOFRADIR (Veurey-Voroize), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), European Space Agency (ESA) 4000113066/15/NL/RA, LeVan, PD, Sood, AK, Wijewarnasuriya, P, DSouza, AI

المصدر: Conference on Infrared Sensors, Devices, and Applications VII ; https://cea.hal.science/cea-02202446 ; Conference on Infrared Sensors, Devices, and Applications VII, Aug 2017, San Diego, Canada. pp.UNSP 104040G, ⟨10.1117/12.2275359⟩

مصطلحات موضوعية: Space, infrared detector, HgCdTe, long wave infrared, p-on-n photodiodes, dark current, [SPI]Engineering Sciences [physics]

جغرافية الموضوع: San Diego

Time: San Diego, Canada

Relation: cea-02202446; https://cea.hal.science/cea-02202446

الاتاحة: https://cea.hal.science/cea-02202446
https://doi.org/10.1117/12.2275359

المؤلفون: Nicolas Péré-Laperne, Nicolas Baier, V. Destefanis, Jean-Louis Santailler, Diane Sam-giao, Cyril Cervera, Christine Cassillo, Clément Lobre, Jocelyn Berthoz, Adrien Lamoure

المساهمون: SOFRADIR (Veurey-Voroize), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), European Space Agency (ESA) [4000113066/15/NL/RA], LeVan, PD, Sood, AK, Wijewarnasuriya, P, DSouza, AI

المصدر: Conference on Infrared Sensors, Devices, and Applications VII
Conference on Infrared Sensors, Devices, and Applications VII, Aug 2017, San Diego, Canada. pp.UNSP 104040G, ⟨10.1117/12.2275359⟩

مصطلحات موضوعية: 010302 applied physics, Materials science, HgCdTe, dark current, Space, 02 engineering and technology, 021001 nanoscience & nanotechnology, Space (mathematics), 01 natural sciences, Computational physics, infrared detector, [SPI]Engineering Sciences [physics], 0103 physical sciences, p-on-n photodiodes, 0210 nano-technology, long wave infrared, Dark current

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2860d47215ac930e6a99b6784f502e76
https://cea.hal.science/cea-02202446

المؤلفون: A. Napoleone, Paul W. Juodawlkis, Jason J. Plant, Douglas C. Oakley, Shannon M. Madison, Jonathan Klamkin

المصدر: IEEE Photonics Journal, Vol 3, Iss 4, Pp 676-685 (2011)

مصطلحات موضوعية: Photocurrent, lcsh:Applied optics. Photonics, Materials science, business.industry, Attenuation length, lcsh:TA1501-1820, Optical power, optical waveguides, waveguide photodiode, Waveguide (optics), Atomic and Molecular Physics, and Optics, Photodiode, law.invention, optical confinement factor, Responsivity, Optics, p-i-n photodiodes, law, Attenuation coefficient, Optoelectronics, lcsh:QC350-467, Electrical and Electronic Engineering, business, Absorption (electromagnetic radiation), lcsh:Optics. Light

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e18893d6978cba4c4713ec6aeae540fd
https://ieeexplore.ieee.org/document/5929483/

المؤلفون: Heinz-Gunter Bach, G.G. Mekonnen, D. Schmidt, Andreas Beling, R. Kunkel

المساهمون: Publica

المصدر: IEEE Journal of Selected Topics in Quantum Electronics. 13:15-21

مصطلحات موضوعية: Materials science, Impedance matching, Photodetector, optical waveguides, law.invention, Optics, law, high-speed optical techniques, Traveling wave, Electrical and Electronic Engineering, integrated optoelectronics, Electrical impedance, monolithic integrated circuits, business.industry, Bandwidth (signal processing), iii-v-semiconductors, Atomic and Molecular Physics, and Optics, Photodiode, indium compounds, p-i-n photodiodes, integrated optics, Splitter, photodetectors, Optoelectronics, Integrated optics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe54b00f884f9c39b58ea7efe95c87f0
https://doi.org/10.1109/jstqe.2006.885331

المؤلفون: Lewen, R., Westergren, Urban, Schatz, Richard, Berglind, Eilert

المصدر: Journal of Lightwave Technology. 19(12):1956-1963

مصطلحات موضوعية: filters, inductance, optical communication, optical receivers, optoelectronic devices, p-i-n photodiodes (PDs), tuning, photodetectors, speed

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-21186

المؤلفون: Bulteel, Olivier, Flandre, Denis, International Symposium on Silicon on Insulator Technology and Devices 2009

المساهمون: UCL - FSA/ELEC - Département d'électricité

مصطلحات موضوعية: p-i-n photodiodes, SOI

Relation: boreal:90347; http://hdl.handle.net/2078.1/90347

الاتاحة: http://hdl.handle.net/2078.1/90347

المؤلفون: Yun, Changhun, Xie, Guohua, Murawski, Caroline, Lee, Jonghee, Ventsch, Fabian, Leo, Karl, Gather, Malte C.

المصدر: Yun , C , Xie , G , Murawski , C , Lee , J , Ventsch , F , Leo , K & Gather , M C 2013 , ' Understanding the influence of doping in efficient phosphorescent organic light-emitting diodes with an organic p-i-n homojunction ' , Organic Electronics , vol. 14 , no. 7 , pp. 1695-1703 . https://doi.org/10.1016/j.orgel.2013.04.018

مصطلحات موضوعية: Organic light emitting diodes, Phosphorescence, p-i-n Photodiodes, Homojunction, TRIPLET-TRIPLET ANNIHILATION, CARRIER TRANSPORT, LAYER, DEVICES, ELECTROPHOSPHORESCENCE, SEMICONDUCTORS, OXIDE

الاتاحة: https://risweb.st-andrews.ac.uk/portal/en/researchoutput/understanding-the-influence-of-doping-in-efficient-phosphorescent-organic-lightemitting-diodes-with-an-organic-pin-homojunction(d8752138-8c96-49c5-9697-ad6c7dc680ef).html
https://doi.org/10.1016/j.orgel.2013.04.018

المؤلفون: G. Unterbörsch, A. Umbach, M. Leone

المساهمون: Publica

المصدر: Journal of Applied Physics. 81:2511-2516

مصطلحات موضوعية: 50 GHz, Fabrication, Materials science, iii-v semiconductors, metal-organic vapor-phase epitaxy, enhanced diffusion component, General Physics and Astronomy, detector bandwidth, Integrated circuit, RC time constant, optical waveguides, high-frequency behavior, Waveguide (optics), law.invention, Gallium arsenide, high-speed detectors, chemistry.chemical_compound, optical butt coupling, Optics, law, high quantum efficiency, waveguide integrated photodiodes, carrier mobility, integrated optoelectronics, partially masked substrates, vapour phase epitaxial growth, quantum efficiency, business.industry, GaInAsP/InP material system, Detector, inp, 4 mum, smallest detector sizes, selective embedded growth, gallium arsenide, semiconductor growth, Photodiode, indium compounds, p-i-n photodiodes, chemistry, Optoelectronics, optoelectronical integrated circuits, Quantum efficiency, 8 GHz, gallium compounds, business, GaInAsP-InP

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4869491f2c22d2061c5dde6211ca8fe2
https://doi.org/10.1063/1.363959

المؤلفون: Bach, H.-G., Schlaak, W., Mekonnen, G.G., Steingrüber, R., Seeger, A., Passenberg, W., Ebert, W., Jacumeit, G., Eckhard, T., Ziegler, R., Beling, A., Schmauss, B., Munk, A., Engel, T., Umbach, A.

مصطلحات موضوعية: iii-v semiconductors, indium compounds, integrated optoelectronics, modules, optical modulation, optical receivers, p-i-n photodiodes, travelling wave amplifiers, photoreceiver modules, rz modulation format, nrz modulation format, pin twa photoreceiver, monolithically integrated taper, butt-coupled pig-tailed modules, cascode-type circuit schemes, integrated travelling wave amplifier, oeic, spot size converter, 50 GHz, 40 Gbit/s, 1.55 micron

Time: 621

Relation: European Conference on Optical Communication (ECOC) 2001; 27th European Conference on Optical Communication 2001. Proceedings. Vol.4: Regular papers & invited papers; https://publica.fraunhofer.de/handle/publica/339031

الاتاحة: https://publica.fraunhofer.de/handle/publica/339031
https://doi.org/10.1109/ECOC.2001.989109