المؤلفون: Dongxia Wei, Bingtian Guo, Adam A. Dadey, J. Andrew McArthur, Junwu Bai, Seth R. Bank, Joe C. Campbell

المصدر: Advanced Photonics Research, Vol 5, Iss 9, Pp n/a-n/a (2024)

مصطلحات موضوعية: amorphous germanium, metasurfaces, p–i–n photodetectors, quantum efficiencies, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2699-9293

URL الوصول: https://doaj.org/article/59023e975c4d4f69b87b1e2517fe5e70

المؤلفون: Jiulong Yu, Guangyang Lin, Shilong Xia, Wei Huang, Tianwei Yang, Jinlong Jiao, Xiangquan Liu, Songyan Chen, Cheng Li, Jun Zheng, Jun Li

المصدر: Applied Physics Express, Vol 17, Iss 4, p 045501 (2024)

مصطلحات موضوعية: magnetron sputtering, single-crystal, GePb films and GePb based p-i-n photodetectors, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1882-0786

URL الوصول: https://doaj.org/article/98a500062ec44cd9bb8eeb29b18ce2d0

المؤلفون: Frederick, van Laere, Stomeo, Tiziana, Cambournac, Cyril, Ayre, Melanie, Brenot, Romain, Benisty, Henri, Roelkens, Günther, Krauss, Thomas F., van Thourhout, Dries, Baets, R.

المساهمون: Department of Information Technology (INTEC), Universiteit Gent = Ghent University = Université de Gand (UGENT), SUPA School of Physics and Astronomy University of St Andrews, University of St Andrews Scotland -Scottish Universities Physics Alliance (SUPA), Laboratoire Charles Fabry de l'Institut d'Optique / Naphel, Laboratoire Charles Fabry de l'Institut d'Optique (LCFIO), Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES France -ALCATEL

المصدر: ISSN: 0733-8724.

مصطلحات موضوعية: CWDM, demultiplexer, integrated optics, photonic crystal, p-i-n photodetectors, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]

الاتاحة: https://iogs.hal.science/hal-00567023
https://iogs.hal.science/hal-00567023v1/document
https://iogs.hal.science/hal-00567023v1/file/18B_00506.pdf

المؤلفون: Hostut, M., Alyoruk, M., Tansel, T., Kilic, A., Turan, R., Aydinli, A., Ergun, Y.

المصدر: Superlattices and Microstructures

مصطلحات موضوعية: III-V semiconductors, InAs/AlSb/GaSb, Infrared detector, MWIR, Photodetectors, Type-II superlattice, Calculations, Electronic properties, Energy gap, Gallium alloys, Indium antimonides, Infrared detectors, Infrared radiation, Photons, First-principles calculation, II-IV semiconductors, InAs, Interface transitions, P-i-n photodetectors, Theoretical approach, Type-II superlattices, Superlattices

وصف الملف: application/pdf

Relation: http://dx.doi.org/10.1016/j.spmi.2014.12.022; 7496036; http://hdl.handle.net/11693/24603

الاتاحة: http://hdl.handle.net/11693/24603
https://doi.org/10.1016/j.spmi.2014.12.022

المؤلفون: Menderes Alyoruk, Rasit Turan, Tunay Tansel, Abidin Kılıç, Yüksel Ergün, Mustafa Hoştut, Atilla Aydinli

المساهمون: Aydınlı, Atilla, Anadolu Üniversitesi, Fen Fakültesi, Fizik Bölümü, Ergün, Yüksel

المصدر: Superlattices and Microstructures

مصطلحات موضوعية: First-principles calculation, Materials science, III-V semiconductors, Superlattices, Band gap, Superlattice, Theoretical approach, Photodetector, InAs/AlSb/GaSb, Specific detectivity, Infrared detector, InAs, Type-II superlattice, Indium antimonides, General Materials Science, Type-II superlattices, Interface transitions, Electrical and Electronic Engineering, Infrared radiation, Photons, business.industry, III–V semiconductors, Detector, Photodetectors, Gallium alloys, MWIR, Condensed Matter Physics, P-i-n photodetectors, Energy gap, Wavelength, Electronic properties, Optoelectronics, II-IV semiconductors, business, Calculations, Infrared detectors, Dark current

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbeddf200f5a6f6becd00fcf1e73f773
https://hdl.handle.net/20.500.12438/7874

المؤلفون: Onaran, E., Onbasli, M.C., Yesilyurt, A., Yu H.Y., Nayfeh, A.M., Okyay, A., K.

المصدر: Optics Express

مصطلحات موضوعية: Epitaxial films, Epitaxial growth, Leakage currents, Monolithic integrated circuits, Single crystals, Applied voltages, Epitaxial techniques, Epitaxially grown, Growth techniques, High-quality films, Monolithic integration, Multiquantum wells, Near Infrared, P-i-n photodetectors, Responsivity, Reverse leakage current, Silicon Germanium, Silicon substrates, Spectral responsivity, VLSI technology, Photodetectors, germanium, silicon, article, chemistry, equipment, equipment design, infrared radiation, instrumentation, near infrared spectroscopy

وصف الملف: application/pdf

Relation: http://dx.doi.org/10.1364/OE.20.007608; http://hdl.handle.net/11693/21540

الاتاحة: http://hdl.handle.net/11693/21540
https://doi.org/10.1364/OE.20.007608

المؤلفون: Yang, Y., Liu, H.C., Shen, W.Z., Gupta, J.A., Luo, H., Buchanan, M., Wasilewski, Z.R.

مصطلحات موضوعية: GaAs/AlGaAs, Near infra red, P-i-n photodetectors, Room temperature, Up-conversion, Wafer fusion, Gallium alloys, Gallium arsenide, Light emitting diodes, Optoelectronic devices, Semiconducting gallium, Infrared devices

وصف الملف: text

Relation: Electronics Letters, Volume: 47, Issue: 6, Publication date: 2011, Pages: 393–395

الاتاحة: https://doi.org/10.1049/el.2010.3543
https://nrc-publications.canada.ca/eng/view/object/?id=d093a160-588e-4229-ba9a-50d1821f5d6a
https://nrc-publications.canada.ca/fra/voir/objet/?id=d093a160-588e-4229-ba9a-50d1821f5d6a

المؤلفون: Hsu S.-H., Chen Y.-J., You H.-Z.

المساهمون: 國立臺灣科技大學電子工程系

مصطلحات موضوعية: 10-Gbit/s, 3 dB bandwidth, AlGaAs/GaAs, Data transmission, Ground signal grounds, High-speed, Internal reflectors, Optical interconnections, P-i-n photodetectors, Coplanar waveguides, Optical communication, Optical interconnects, Optoelectronic devices, Polyimides, Light transmission

Relation: Electronics Letters, Vol.46, No.2, pp.149-150; http://ir.lib.ntust.edu.tw/handle/987654321/27819; http://ir.lib.ntust.edu.tw/bitstream/987654321/27819/-1/index.html

الاتاحة: http://ir.lib.ntust.edu.tw/handle/987654321/27819
https://doi.org/10.1049/el.2010.1439
http://ir.lib.ntust.edu.tw/bitstream/987654321/27819/-1/index.html

المصدر: Sensor Electronics and Microsystem Technologies; Том 9, № 2 (2012); 25-33
Сенсорная электроника и микросистемные технологии; Том 9, № 2 (2012); 25-33
Сенсорна електроніка і мікросистемні технології; Том 9, № 2 (2012); 25-33

مصطلحات موضوعية: Physics::Instrumentation and Detectors, dislocations, photocurrent amplification factor, quantum efficiency, p-i-n-photodetectors, Physics::Optics, Quantum Physics, дислокації, коефіцієнт посилення фотоструму, квантова ефективність, p-i-n-фото- приймачі, дислокации, коэффициент усиления фототока, квантовая эффективность, p-i-n- фотоприемники

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=scientific_p::77a83b060a7a9fd3b1e475b7779c8bae
http://semst.onu.edu.ua/article/view/112994

المؤلفون: Van Laere, Frederik, Stomeo, Tiziana, Cambournac, Cyril, Ayre, Melanie, Brenot, Romain, Benisty, Henri, Roelkens, Guenther, Krauss, Thomas Fraser, Van Thourhout, Dries, Baets, Roel

المصدر: Van Laere , F , Stomeo , T , Cambournac , C , Ayre , M , Brenot , R , Benisty , H , Roelkens , G , Krauss , T F , Van Thourhout , D & Baets , R 2009 , ' Nanophotonic Polarization Diversity Demultiplexer Chip ' , Journal of Lightwave Technology , vol. 27 , no. 1-4 , pp. 417-425 . https://doi.org/10.1109/JLT.2008.929414

مصطلحات موضوعية: CWDM, demultiplexer, integrated optics, photonic crystal, p-i-n photodetectors, 2-DIMENSIONAL PHOTONIC-CRYSTAL, WIRE WAVE-GUIDES, GRATING COUPLERS, COMPACT, CIRCUIT, DEVICES, NANOCAVITY, MEMBRANE, FIBERS, LASER

الاتاحة: https://research-portal.st-andrews.ac.uk/en/publications/2ac05615-7777-4ffb-9298-6a0c69dd3244
https://doi.org/10.1109/JLT.2008.929414
http://www.scopus.com/inward/record.url?scp=61649102914&partnerID=8YFLogxK

المؤلفون: Yu H.-Y., Ren, S., Jung W.S., Okyay, A., K., Miller, D.A.B., Saraswat, K.C.

المصدر: IEEE Electron Device Letters

مصطلحات موضوعية: Germanium, Photodiode, Selective, Strain, Tensile, Absorption edges, Enhanced efficiency, Heteroepitaxy, High efficiency, Hydrogen annealing, Monolithic integration, Monolithically integrated, Near Infrared, Normal incidence, On chips, Optimal antireflection, P-i-n photodetectors, Pin photodiode, Residual tensile strain, Antireflection coatings, Epitaxial growth, Monolithic integrated circuits, Optoelectronic devices, Photodetectors, Photodiodes, Tensile strain

وصف الملف: application/pdf

Relation: http://dx.doi.org/10.1109/LED.2009.2030905; 7413106; http://hdl.handle.net/11693/22596

الاتاحة: http://hdl.handle.net/11693/22596
https://doi.org/10.1109/LED.2009.2030905

المؤلفون: Y. Yang, Margaret Buchanan, Z. R. Wasilewski, H. Luo, Wenzhong Shen, James A. Gupta, H. C. Liu

مصطلحات موضوعية: Infrared devices, Materials science, Photodetector, Up-conversion, Optoelectronic devices, Gallium arsenide, law.invention, chemistry.chemical_compound, Optics, GaAs/AlGaAs, law, Near infra red, Wafer, Electrical and Electronic Engineering, Semiconducting gallium, Room temperature, business.industry, Near-infrared spectroscopy, Nonlinear optics, Gallium alloys, Photon upconversion, P-i-n photodetectors, Light emitting diodes, Wavelength, chemistry, Optoelectronics, Wafer fusion, business, Light-emitting diode

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3948caeb2999b3d2ab7e4b4aaacd65b
https://nrc-publications.canada.ca/eng/view/object/?id=d093a160-588e-4229-ba9a-50d1821f5d6a

المؤلفون: D. Van Thourhout, Cyril Cambournac, F. Van Laere, Gunther Roelkens, M. Ayre, Roel Baets, Henri Benisty, Tiziana Stomeo, Romain Brenot, Thomas F. Krauss

المساهمون: Benisty, Henri, Department of Information Technology (INTEC), Universiteit Gent = Ghent University [Belgium] (UGENT), SUPA School of Physics and Astronomy [University of St Andrews], University of St Andrews [Scotland]-Scottish Universities Physics Alliance (SUPA), Laboratoire Charles Fabry de l'Institut d'Optique / Naphel, Laboratoire Charles Fabry de l'Institut d'Optique (LCFIO), Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL

المصدر: Journal of Lightwave Technology
Journal of Lightwave Technology, Institute of Electrical and Electronics Engineers (IEEE)/Optical Society of America(OSA), 2009, 27 (4), pp.417

مصطلحات موضوعية: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], Demultiplexer, demultiplexer, p-i-n photodetectors, Transmission loss, 02 engineering and technology, 01 natural sciences, Multiplexing, 010309 optics, 020210 optoelectronics & photonics, Optics, Wavelength-division multiplexing, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Optical polarization, Polarization (waves), Atomic and Molecular Physics, and Optics, Fiber optic sensor, integrated optics, CWDM, Photonics, business, photonic crystal

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::acd79a63656381ac033d5b3038d30e2d
https://hal-iogs.archives-ouvertes.fr/hal-00567023

المؤلفون: Fang, Z-Q., Look, David C., Lu, C., Morkoç, H.

المصدر: Physics Faculty Publications

مصطلحات موضوعية: GaN p-i-n photodetectors, Reactive molecular beam epitaxy, Electrical characterizations, Electron and hole traps, Physical Sciences and Mathematics, Physics

Relation: https://corescholar.libraries.wright.edu/physics/391; http://link.springer.com/content/pdf/10.1007%2Fs11664-004-0274-8

الاتاحة: https://corescholar.libraries.wright.edu/physics/391
https://doi.org/10.1007/s11664-004-0274-8
http://link.springer.com/content/pdf/10.1007%2Fs11664-004-0274-8

المؤلفون: Ali, Dyan

المساهمون: Goldhar, Julius, Richardson, Christopher J.K., Digital Repository at the University of Maryland, University of Maryland (College Park, Md.), Electrical Engineering

مصطلحات موضوعية: Electrical engineering, Materials Science, Molecular Beam Epitaxy, P-i-n photodetectors, Silicon germanium

وصف الملف: application/pdf

Relation: http://hdl.handle.net/1903/13075

الاتاحة: http://hdl.handle.net/1903/13075

المؤلفون: 葉育翔, Yu-Hsiang Yeh

المساهمون: 光電工程系

مصطلحات موضوعية: 氮化鋁鎵, 選擇性成長, 倒置型p-i-n偵測器, AlGaN, selective-area grown techniques, Inverted p-i-n photodetectors

Time: 14

وصف الملف: 143 bytes; application/octet-stream

Relation: http://ir.lib.stust.edu.tw/handle/987654321/18140

الاتاحة: http://ir.lib.stust.edu.tw/handle/987654321/18140

Additional Titles: АНАЛИЗ ТЕМПЕРАТУРНЫХ ЗАВИСИМОСТЕЙ КОЭФФИЦИЕНТА УСИЛЕНИЯ ФОТОТОКА И КВАНТОВОЙ ЭФФЕКТИВНОСТИ КРЕМНИЕВЫХ P-I-N-ФОТО ПРИЕМНИКОВ, ПРЕДНАЗНАЧЕННЫХ ДЛЯ РЕГИСТРАЦИИ ИЗЛУЧЕНИЯ В ИНФРАКРАСНОЙ ОБЛАСТИ СПЕКТРА, ПРОВЕДЕННЫЙ ДЛЯ РАЗЛИЧНЫХ ПЛОТНОСТЕЙ ДИСЛОКАЦИЙ В ПРИБОР
АНАЛІЗ ТЕМПЕРАТУРНИХ ЗАЛЕЖНОСТЕЙ КОЕФІЦІЄНТА ПОСИЛЕННЯ ФОТОСТРУМУ І КВАНТОВОЇ ЕФЕКТИВНОСТІ КРЕМНІЄВИХ P-I-N-ФОТО ПРИЙМАЧІВ, ВИГОТОВЛЕНИХ ДЛЯ РЕЄСТРАЦІЇ ВИПРОМІНЕННЯ В ІНФРАЧЕРВОНІЙ ОБЛАСТІ СПЕКТРУ, ПРОВЕДЕНИЙ ДЛЯ РІЗНИХ ГУСТИН ДИСЛОКАЦІЙ У ПРИЛАДАХ

المؤلفون: Свірідова, О. В.; Одеський національний університет імені І. І. Мечникова

المصدر: Сенсорна електроніка і мікросистемні технології; Том 9, № 2 (2012); 25-33; Сенсорная электроника и микросистемные технологии; Sensor Electronics and Microsystem Technologies; 2415-3508; 1815-7459

مصطلحات الفهرس: dislocations, photocurrent amplification factor, quantum efficiency, p-i-n-photodetectors, дислокации, коэффициент усиления фототока, квантовая эффективность, p-i-n- фотоприемники, дислокації, коефіцієнт посилення фотоструму, квантова ефективність, p-i-n-фото- приймачі, info:eu-repo/semantics/article, info:eu-repo/semantics/publishedVersion

URL: http://semst.onu.edu.ua/article/view/112994
http://semst.onu.edu.ua/article/view/112994/113366
http://semst.onu.edu.ua/article/view/112994/113366