المؤلفون: Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 1239-1245 (2018)

مصطلحات موضوعية: Vertically-stacked nanowire FETs, accumulation mode operation, self-heating-effect, source/drain recessed contact, p/n-stacked nanowire on bulk-FinFET, 3-dimensinal 6T-SRAM layout, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8540840/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/ce1ee70626f74aaeaca5484246517df9