المؤلفون: Zeyang Xiang, Kexiang Wang, Jie Lu, Zixuan Wang, Huilin Jin, Ranping Li, Mengrui Shi, Liuxuan Wu, Fuyu Yan, Ran Jiang

المصدر: Applied Sciences, Vol 14, Iss 6, p 2588 (2024)

مصطلحات موضوعية: homogeneous oxide stacking, multilevel-cell (MLC) NAND memory, hafnium-zirconium oxide (HfZrO), charge trap memory (CTM), Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999

Relation: https://www.mdpi.com/2076-3417/14/6/2588; https://doaj.org/toc/2076-3417; https://doaj.org/article/58524cfb35514c449f7ebcd073678929

الاتاحة: https://doi.org/10.3390/app14062588
https://doaj.org/article/58524cfb35514c449f7ebcd073678929

المؤلفون: Zhu, Qingxiao, Xu, Lihua, Zhou, Zhidao, Wei, Wei, Xv, Pan, Dou, Chunmeng, Wang, Lingfei, Luo, Qing, Li, Ling

المصدر: Nanotechnology ; ISSN:1361-6528

مصطلحات موضوعية: Device-to-device variation, FeFET, multilevel cell (MLC), percolation

Relation: https://doi.org/10.1088/1361-6528/ada4b8; https://pubmed.ncbi.nlm.nih.gov/39746219

الاتاحة: https://doi.org/10.1088/1361-6528/ada4b8
https://pubmed.ncbi.nlm.nih.gov/39746219

المؤلفون: Siddhartha Raman Sundara Raman, Shanshan Xie, Jaydeep P. Kulkarni

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 1, Pp 35-43 (2022)

مصطلحات موضوعية: Compute-in-memory (CIM), embedded DRAM (eDRAM), indium–gallium–zinc–oxide (IGZO), leakage, multilevel cell, read, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9815041/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/5450d2647f7c4ba6a393b1a076f8b885

المؤلفون: Taehun Lee, Hae-In Kim, Yoonjin Cho, Sangwoo Lee, Won-Yong Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Sin-Hyung Lee, Jaewon Jang

المصدر: Nanomaterials; Volume 13; Issue 17; Pages: 2432

مصطلحات موضوعية: sol–gel, Y 2 O 3, RRAM, multilevel cell

وصف الملف: application/pdf

Relation: Nanoelectronics, Nanosensors and Devices; https://dx.doi.org/10.3390/nano13172432

الاتاحة: https://doi.org/10.3390/nano13172432

المؤلفون: Furqan Zahoor, Tun Zainal Azni Zulkifli, Farooq Ahmad Khanday

المصدر: Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-26 (2020)

مصطلحات موضوعية: Emerging memory, Multilevel cell (MLC), Non-volatile storage, Oxygen vacancies, Resistive random access memory (RRAM), Resistance switching, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-020-03299-9; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/e43b1d5095784a5ebd8b158ea86bfbc0

المؤلفون: Milo V., Glukhov A., Perez E., Zambelli C., Lepri N., Mahadevaiah M. K., Quesada E. P. -B., Olivo P., Wenger C., Ielmini D.

المساهمون: Milo, V., Glukhov, A., Perez, E., Zambelli, C., Lepri, N., Mahadevaiah, M. K., Quesada, E. P. -B., Olivo, P., Wenger, C., Ielmini, D.

مصطلحات موضوعية: Artificial neural network (ANN), in-memory computing (IMC), multilevel-cell (MLC) operation, resistive switching memory (RRAM)

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000678349800021; volume:68; issue:8; firstpage:3832; lastpage:3837; numberofpages:6; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; https://hdl.handle.net/11392/2472239; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85111677554; https://ieeexplore.ieee.org/document/9472874

الاتاحة: https://hdl.handle.net/11392/2472239
https://doi.org/10.1109/TED.2021.3089995
https://ieeexplore.ieee.org/document/9472874

المؤلفون: Shanshan, Liu, Reviriego Vasallo, Pedro, Lombardi, Fabrizio

المساهمون: Comunidad de Madrid, Ministerio de Economía y Competitividad (España)

مصطلحات موضوعية: Error correction codes, Limited magnitude errors, Multilevel cell memories, SEC-DAEC codes, Telecomunicaciones

Relation: Gobierno de España. TEC2016-80339-R; Comunidad de Madrid. P2018/TCS-4496; Liu, S., Reviriego, P. y Lombardi, F. (2020). Codes for Limited Magnitude Error Correction in Multilevel Cell Memories. IEEE Transactions on Circuits and Systems I: Regular Papers, 67(5), pp. 1615-1626.; http://hdl.handle.net/10016/31883; https://doi.org/10.1109/TCSI.2019.2961847; 1615; 1626; IEEE Transactions on Circuits and Systems I: Regular Papers; 67; AR/0000025716

الاتاحة: http://hdl.handle.net/10016/31883
https://doi.org/10.1109/TCSI.2019.2961847

المؤلفون: Pal, P., Lee, K.-J., Thunder, S., De, Sourav, Huang, P.T., Kämpfe, Thomas, Wang, Y.H.

مصطلحات موضوعية: Bending, flexible, hafnium oxide (HfO ) 2, MNIST, multilevel cell (MLC), neural networks (NNs), nonvolatile memory, resistive RAM (RRAM), synaptic plasticity, variation

Relation: IEEE transactions on electron devices; https://publica.fraunhofer.de/handle/publica/436290

الاتاحة: https://publica.fraunhofer.de/handle/publica/436290
https://doi.org/10.1109/TED.2022.3186965

المؤلفون: Bin Gao, Lifeng Liu, Jinfeng Kang

المصدر: Progress in Natural Science: Materials International, Vol 25, Iss 1, Pp 47-50 (2015)

مصطلحات موضوعية: Hafnium oxide (HfOx), Resistive switching, Memristor, Multilevel cell (MLC), Synapse, Materials of engineering and construction. Mechanics of materials, TA401-492

Relation: http://www.sciencedirect.com/science/article/pii/S1002007115000064; https://doaj.org/toc/1002-0071; https://doaj.org/article/d1870cc821684525ba472911a7efea75

الاتاحة: https://doi.org/10.1016/j.pnsc.2015.01.005
https://doaj.org/article/d1870cc821684525ba472911a7efea75

المؤلفون: Zhang, Wenhui, Cao, Qiang, Lu, Zhonghai

المصدر: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 38(4):780-784

مصطلحات موضوعية: Bit-flipping, lifetime extension, multilevel cell (MLC) flash, retention error reduction, state dependent damage

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-249871

المؤلفون: Cristian Zambelli, Eduardo Perez, Daniele Ielmini, Piero Olivo, Christian Wenger, Emilio Perez-Bosch Quesada, Mamathamba Kalishettyhalli Mahadevaiah, Valerio Milo, Artem Glukhov, Nicola Lepri

مصطلحات موضوعية: Scheme (programming language), Computer science, Inference, 02 engineering and technology, multilevel-cell (MLC) operation, NO, 03 medical and health sciences, Acceleration, 0302 clinical medicine, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, PE7_2, PE7_5, Electrical and Electronic Engineering, computer.programming_language, Electronic circuit, Artificial neural network (ANN), Artificial neural network, 020208 electrical & electronic engineering, resistive switching memory (RRAM), Electronic, Optical and Magnetic Materials, Resistive random-access memory, Logic gate, Multiplication, in-memory computing (IMC), computer, 030217 neurology & neurosurgery

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::456e6691671d344e3c74663ae0d15fd9
https://hdl.handle.net/11392/2472239

المؤلفون: Masato KITAKAMI, Shohei KOTAKI

المصدر: IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. 2017, E100.A(2):653

المؤلفون: Hitoshi KUME, 久米 均

المصدر: 応用物理 / OYOBUTURI. 1996, 65(11):1114

المؤلفون: Lifeng Liu, Bin Gao, Jinfeng Kang

المصدر: Progress in Natural Science: Materials International, Vol 25, Iss 1, Pp 47-50 (2015)

مصطلحات موضوعية: Materials science, chemistry.chemical_element, Memristor, law.invention, Hafnium oxide (HfOx), Reliability (semiconductor), Stack (abstract data type), law, Multilevel cell (MLC), Electronic engineering, Hardware_INTEGRATEDCIRCUITS, lcsh:TA401-492, General Materials Science, Resistive switching, Electronics, General, business.industry, Synapse, chemistry, Neuromorphic engineering, Electrode, Optoelectronics, lcsh:Materials of engineering and construction. Mechanics of materials, business, Tin, Low voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::590065f46d508e37e789c0c5631d2cd1
http://www.sciencedirect.com/science/article/pii/S1002007115000064

المؤلفون: Zeinali, Behzad, Esmaeili, Mahsa, Madsen, Jens Kargaard, Moradi, Farshad

المصدر: Zeinali , B , Esmaeili , M , Madsen , J K & Moradi , F 2017 , Multilevel SOT-MRAM Cell with a Novel Sensing Scheme for High-Density Memory Applications . in 2017 47th European Solid-State Device Research Conference : ESSDERC 2017 . IEEE , pp. 172-175 , European Solid-State Device Research Conference , Leuven , Belgium , 11/09/2017 . https://doi.org/10.1109/ESSDERC.2017.8066619

مصطلحات موضوعية: SOT-MRAM, p-MTJ, Spin-Hall Effect, Sensing scheme, Multilevel cell

الاتاحة: https://pure.au.dk/portal/da/publications/multilevel-sotmram-cell-with-a-novel-sensing-scheme-for-highdensity-memory-applications(82cd5c07-8dc2-46a2-92b8-3ff7b2165f41).html
https://doi.org/10.1109/ESSDERC.2017.8066619

المؤلفون: Alamgir, Zahiruddin, Beckmann, Karsten, Holt, Joshua, Cady, Nathaniel C.

مصطلحات موضوعية: neuromorphic computing, cognitive computing, resistive random access memory, memristor, non-volatile memory, computer memory, computer storage, data storage, metal-insulator-metal (MIM), structure, multilevel cell (MLC) storage

وصف الملف: application/pdf

Relation: Appl. Phys. Lett. 111, 063111 (2017); http://dx.doi.org/10.1063/1.4993058; http://hdl.handle.net/1951/69365

الاتاحة: http://hdl.handle.net/1951/69365
https://doi.org/10.1063/1.4993058

المؤلفون: Prakash A., Hyunsang Hwang

المساهمون: Hyunsang Hwang

مصطلحات موضوعية: conductive filament, Emerging memory, high density, memory margin, MLC reliability, multilevel cell storage (MLC), non-volatile storage, resistive random access memory (ReRAM), storage, variability

Relation: Physical Sciences Reviews; https://oasis.postech.ac.kr/handle/2014.oak/37692; 23224; Physical Sciences Reviews, v.1, no.6; 2-s2.0-85060068052

الاتاحة: https://oasis.postech.ac.kr/handle/2014.oak/37692
https://doi.org/10.1515/psr-2016-0010

المؤلفون: Kim, Yusung, Fong, Xuanyao, Kwon, Kon-Woo, Chen, Mei-Chin, Roy, Kaushik

المساهمون: DEPT OF ELECTRICAL & COMPUTER ENGG

المصدر: Elements

مصطلحات موضوعية: Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Magnetic memory, multilevel cell (MLC), spin-Hall effect (SHE), spin-orbit torque (SOT), spin-transfer torque (STT)

Relation: Kim, Yusung, Fong, Xuanyao, Kwon, Kon-Woo, Chen, Mei-Chin, Roy, Kaushik (2015-02-01). Multilevel Spin-Orbit Torque MRAMs. IEEE TRANSACTIONS ON ELECTRON DEVICES 62 (2) : 561-568. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2014.2377721; https://scholarbank.nus.edu.sg/handle/10635/156182

الاتاحة: https://scholarbank.nus.edu.sg/handle/10635/156182

المؤلفون: Stoliar, P., Levy, P., Sanchez, M.J., Leyva, A.G., Albornoz, C.A., Gomez-Marlasca, F., Zanini, A., Toro Salazar, C., Ghenzi, N., Rozenberg, M.J.

المساهمون: Laboratoire de Physique des Solides (LPS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 1549-7747 ; EISSN: 1558-3791.

مصطلحات موضوعية: Multilevel cell (MLC) memory, Multilevel resistive switching, Non-volatile memory, Nonvolatile memory devices, Resistive Random Access Memory (ReRAM), Resistive switching, Random access storage, Cells, Cytology, Manganites, Nonvolatile storage, Timing circuits, Transition metal oxides, Transition metals, Arbitrary values, Multi level cell (MLC), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: info:eu-repo/semantics/altIdentifier/arxiv/1310.3613; ARXIV: 1310.3613

الاتاحة: https://hal.science/hal-04882773
https://doi.org/10.1109/TCSII.2013.2290921

المؤلفون: Francesca Vipiana, J. A. Tobon Vasquez, Ladislau Matekovits, Matteo Alessandro Francavilla, Giuseppe Vecchi

مصطلحات موضوعية: Fast Fourier transform, Method of moments, Method of moments (statistics), Computational science, Automatic Generation, Electronic engineering, Fast solvers, Electrically large, Multilevel cell, Integral equations, 3D Structure, Mathematics, Subdivision, Block (data storage), Numerical experiments, business.industry, Numerical analysis, Domain decomposition methods, Arbitrary structures, Solver, Compression techniques, Function expansion, synthetic functions expansion (SFX), Antennas, Numerical methods, Computational electromagnetics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd8011f61449ccd5525f1c0c87439229
http://hdl.handle.net/11583/2480395