المؤلفون: Lingjun Kong, Haiyang Liu, Wentao Hou, Chao Meng

المصدر: Entropy, Vol 26, Iss 1, p 54 (2024)

مصطلحات موضوعية: bilayer low-density parity-check (LDPC) codes, genetic algorithm (GA), perturbation noise, NAND flash memory, multi-level cell (MLC), Science, Astrophysics, QB460-466, Physics, QC1-999

Relation: https://www.mdpi.com/1099-4300/26/1/54; https://doaj.org/toc/1099-4300; https://doaj.org/article/92682b9940f54e03ae6ae10efcbe0d39

الاتاحة: https://doi.org/10.3390/e26010054
https://doaj.org/article/92682b9940f54e03ae6ae10efcbe0d39

المؤلفون: Wang, C, Li, J, Kong, L, Shu, F, Lau, FCM

المساهمون: Department of Electrical and Electronic Engineering

مصطلحات موضوعية: 2D scheduling, Majority-logic decoding (MLGD), Multi-level cell (MLC), NAND flash memory, Non-binary low-density parity-check (NB-LDPC) codes

Relation: http://hdl.handle.net/10397/107128; 1349; 1353; 67; 2-s2.0-85087447071; EIE-0184; 6630898

الاتاحة: http://hdl.handle.net/10397/107128
https://doi.org/10.1109/TCSII.2019.2935031

المؤلفون: Lingjun Kong, Yahui Liu, Haiyang Liu, Shengmei Zhao

المصدر: IEEE Access, Vol 7, Pp 37131-37140 (2019)

مصطلحات موضوعية: Protograph low-density parity-check (LDPC) codes, polar codes, extrinsic information transfer (EXIT) chart, NAND flash, multi-level cell (MLC), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8666631/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/ed52e8d4e5854c408b50945a9de7042a

المؤلفون: Jianjun MU, Xiaopeng JIAO, Xuan ZHANG, Yu-Cheng HE

المصدر: IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. 2019, E102.A(11):1571

المؤلفون: Sung, Changhyuck, Lim, Seokjae, Kim, Hyungjun, Kim, Taesu, Moon, Kibong, Song, Jeonghwan, Kim, Jae-Joon, Hwang, Hyunsang

المساهمون: Sung, Changhyuck, Lim, Seokjae, Kim, Hyungjun, Kim, Taesu, Moon, Kibong, Song, Jeonghwan, Kim, Jae-Joon, Hwang, Hyunsang

مصطلحات موضوعية: Classification (of information), Image classification, Image enhancement, Oxygen vacancies, Pattern recognition, Pattern recognition systems, RRAM, Tantalum compounds, Classification accuracy, Multi level cell (MLC), Neural network hardware, Neuromorphic systems, Pattern Recognition accuracies, Resistive random access memory (rram), synapse device, TaOx, Random access storage, MEMORY, conductance linearity, neuromorphic system

Relation: NANOTECHNOLOGY; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Science & Technology - Other Topics; Materials Science; Physics; https://oasis.postech.ac.kr/handle/2014.oak/94605; 30883; NANOTECHNOLOGY, v.29, no.11; 000424466200002; 2-s2.0-85041924421

الاتاحة: https://oasis.postech.ac.kr/handle/2014.oak/94605
https://doi.org/10.1088/1361-6528/aaa733

المؤلفون: Lim, Seokjae, Sung, Changhyuck, Kim, Hyungjun, Kim, Taesu, Song, Jeonghwan, Kim, Jae-Joon, Hwang, Hyunsang

المساهمون: Lim, Seokjae, Sung, Changhyuck, Kim, Hyungjun, Kim, Taesu, Song, Jeonghwan, Kim, Jae-Joon, Hwang, Hyunsang

مصطلحات موضوعية: Metal ions, Metals, Classification accuracy, Conductive-bridging RAM (CBRAM), Device engineering, Inherent characteristics, Ion injection, Multi level cell (MLC), Neuromorphic systems, synaptic device, Classification (of information), PERFORMANCE, MEMORY, Neuromorphic system, linear conductance

Relation: IEEE ELECTRON DEVICE LETTERS; Engineering, Electrical & Electronic; Engineering; https://oasis.postech.ac.kr/handle/2014.oak/94607; 30884; IEEE ELECTRON DEVICE LETTERS, v.39, no.2, pp.312 - 315; 000424080800037; 2-s2.0-85040080763

الاتاحة: https://oasis.postech.ac.kr/handle/2014.oak/94607
https://doi.org/10.1109/LED.2018.2789425

المؤلفون: Yu Cai, Gulay Yalcin, Onur Mutlu, Erich F. Haratsch, Adrian Cristal, Osman S. Unsal, Ken Mai

مصطلحات موضوعية: Computer Engineering, Electrical and Electronic Engineering not elsewhere classified, NAND Flash, reliability, error correction, multi-level cell (MLC)

Relation: https://figshare.com/articles/Flash_Correct-and-Refresh_Retention-Aware_Error_Management_for_Increased_Flash_Memory_Lifetime/6468821

الاتاحة: https://doi.org/10.1184/r1/6468821.v1
https://figshare.com/articles/Flash_Correct-and-Refresh_Retention-Aware_Error_Management_for_Increased_Flash_Memory_Lifetime/6468821

المؤلفون: 謝仁偉

المساهمون: 國立臺灣科技大學資訊工程系

مصطلحات موضوعية: 旋轉力矩轉移隨機存取記憶體, 末級快取, 多階儲存單元, 寫入干擾, 讀取干擾, 兩步驟轉換, Spin Torque Transfer Random Access Memory (STT-RAM), Last Level Cache (LLC), Multi-level Cell (MLC), write disturbance, read disturbance, Two-step Transition (TT)

وصف الملف: 117 bytes; text/html

Relation: http://ir.lib.ntust.edu.tw/handle/987654321/80608; http://ir.lib.ntust.edu.tw/bitstream/987654321/80608/1/index.html

الاتاحة: http://ir.lib.ntust.edu.tw/handle/987654321/80608
http://ir.lib.ntust.edu.tw/bitstream/987654321/80608/1/index.html

المؤلفون: Stoliar, P., Levy, P., Sanchez, M.J., Leyva, A.G., Albornoz, C.A., Gomez-Marlasca, F., Zanini, A., Toro Salazar, C., Ghenzi, N., Rozenberg, M.J.

المساهمون: Laboratoire de Physique des Solides (LPS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 1549-7747 ; EISSN: 1558-3791.

مصطلحات موضوعية: Multilevel cell (MLC) memory, Multilevel resistive switching, Non-volatile memory, Nonvolatile memory devices, Resistive Random Access Memory (ReRAM), Resistive switching, Random access storage, Cells, Cytology, Manganites, Nonvolatile storage, Timing circuits, Transition metal oxides, Transition metals, Arbitrary values, Multi level cell (MLC), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: info:eu-repo/semantics/altIdentifier/arxiv/1310.3613; ARXIV: 1310.3613

الاتاحة: https://hal.science/hal-04882773
https://doi.org/10.1109/TCSII.2013.2290921

المؤلفون: Irom, Farokh, Allen, Gregory R.

مصطلحات موضوعية: space radiation, nonvolatile flash memory, Single-Event Effect (SEE), total ionizing dose (TID), Single-Level Cell (SLC), Multi-level cell (MLC), NAND flash memory, micron technology, floating gate (FG), Single-event functional interrupt (SEFI), Electronics and Electrical Engineering

وصف الملف: application/pdf

Relation: JPL Publication; 12-19; http://hdl.handle.net/2014/43134

الاتاحة: http://hdl.handle.net/2014/43134

المؤلفون: Heidecker, Jason

مصطلحات موضوعية: flash memory reliability, endurancy cycling, latency, NAND Flash, multi-level-cell (MLC)

وصف الملف: application/pdf

Relation: JPL Publication; 10-19; http://hdl.handle.net/2014/41716

الاتاحة: http://hdl.handle.net/2014/41716

المؤلفون: Sheldon, Douglas, Freie, Michael

مصطلحات موضوعية: NASA Electronic Parts and Packaging (NEPP), NAND flash devices, multi-level cell (MLC) NAND

وصف الملف: application/pdf

Relation: JPL Publication; 08-07; http://hdl.handle.net/2014/40761

الاتاحة: http://hdl.handle.net/2014/40761

المؤلفون: Stoliar, P., Levy, P., Sanchez, M.J., Leyva, A.G., Albornoz, C.A., Gomez-Marlasca, F., Zanini, A., Toro Salazar, C., Ghenzi, N., Rozenberg, M.J.

مصطلحات موضوعية: Multilevel cell (MLC), nonvolatile memory, resistive random access memory (ReRAM), resistive switching (RS), Metallic compounds, Switching systems, Transition metals, Multi level cell (MLC), Multilevel cell (MLC) memory, Multilevel resistive switching, Non-volatile memory, Nonvolatile memory devices, Resistive switching, Transition-metal oxides, Nonvolatile storage

Relation: http://hdl.handle.net/20.500.12110/paper_15497747_v61_n1_p21_Stoliar

الاتاحة: https://hdl.handle.net/20.500.12110/paper_15497747_v61_n1_p21_Stoliar

المؤلفون: Levy, Pablo Eduardo, Sánchez, María José, Rozenberg, Marcelo Javier

مصطلحات موضوعية: Multilevel cell (MLC), nonvolatile memory, resistive random access memory (ReRAM), resistive switching (RS), Metallic compounds, Switching systems, Transition metals, Multi level cell (MLC), Multilevel cell (MLC) memory, Multilevel resistive switching, Non-volatile memory, Nonvolatile memory devices, Resistive switching, Transition-metal oxides, Nonvolatile storage

Relation: https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_15497747_v61_n1_p21_Stoliar; http://hdl.handle.net/20.500.12110/paper_15497747_v61_n1_p21_Stoliar

الاتاحة: https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_15497747_v61_n1_p21_Stoliar
https://hdl.handle.net/20.500.12110/paper_15497747_v61_n1_p21_Stoliar