المؤلفون: Caterina Sbandati, Xiongfei Jiang, Deepika Yadav, Spyros Stathopoulos, Dana Cohen, Alex Serb, Shiwei Wang, Themis Prodromakis

المصدر: Advanced Electronic Materials, Vol 10, Iss 12, Pp n/a-n/a (2024)

مصطلحات موضوعية: brain‐machine interface, HfOx, metal‐oxide RRAM, MIS, multi‐unit activity envelope, TiOx, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/9ac8941e73ef42818704b13ca2afa361

المؤلفون: Sbandati, Caterina, Yadav, Deepika, Stathopoulos, Spyros, Prodromakis, Themis, Cohen, Dana, Jiang, Xiongfei, Serb, Alex, Wang, Shiwei

المساهمون: EPSRC - Engineering and Physical Sciences Research Council, Sbandati, C.A.L

مصطلحات موضوعية: Metal-oxide RRAM, TiOx, HfOx, Memristive Integrating Sensor (MIS), brain-machine interface, multi-unit activity envelope, Engineering::Electronic Engineering

جغرافية الموضوع: UK, UNITED KINGDOM

وصف الملف: application/zip; text/plain

Relation: https://doi.org/10.1002/aelm.202400638; Sbandati, Caterina; Yadav, Deepika; Stathopoulos, Spyros; Prodromakis, Themis; Cohen, Dana; Jiang, Xiongfei; Serb, Alex; Wang, Shiwei. (2024). Dataset for Neuronal Multi Unit Activity Processing With Metal Oxide Memristive Devices, [dataset]. University of Edinburgh. School of Engineering. Institute for Integrated Micro and Nano Systems. https://doi.org/10.7488/ds/7823.; https://hdl.handle.net/10283/8884; https://doi.org/10.7488/ds/7823

الاتاحة: https://hdl.handle.net/10283/8884
https://doi.org/10.7488/ds/7823

المؤلفون: Lammie C., Azghadi M. R., Ielmini D.

المساهمون: Lammie, C., Azghadi, M. R., Ielmini, D.

مصطلحات موضوعية: Deep learning, Endurance, Metal-oxide RRAM, Retention, Simulation

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000642199100001; volume:36; issue:6; firstpage:1; lastpage:7; numberofpages:7; journal:SEMICONDUCTOR SCIENCE AND TECHNOLOGY; http://hdl.handle.net/11311/1173655; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85105044391

الاتاحة: http://hdl.handle.net/11311/1173655
https://doi.org/10.1088/1361-6641/abf29d

المؤلفون: Corey Lammie, Mostafa Rahimi Azghadi, Daniele Ielmini

مصطلحات موضوعية: Artificial neural network, Computer science, business.industry, Deep learning, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Resistive random-access memory, Power (physics), Endurance, Metal-oxide RRAM, Retention, Materials Chemistry, Artificial intelligence, Electrical and Electronic Engineering, Crossbar switch, business, Simulation, Energy (signal processing)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17b04977d59222be8c6737326df28013
http://hdl.handle.net/11311/1173655

المؤلفون: A. Khanna, P. Kumbhare, Udayan Ganguly, Indranil Chakraborty, Neeraj Panwar

المصدر: IEEE Transactions on Electron Devices. 64:137-144

مصطلحات موضوعية: Materials science, 02 engineering and technology, Pr0.7ca0.3mno3 (Pcmo), 01 natural sciences, Temperature measurement, Memory, 0103 physical sciences, Devices, Self-Heating, Electrical and Electronic Engineering, Exponential decay, Positive feedback, 010302 applied physics, business.industry, Metal-Oxide Rram, Electrical engineering, 021001 nanoscience & nanotechnology, Rram, Transient Iv, Electronic, Optical and Magnetic Materials, Computational physics, Resistive random-access memory, Transient (oscillation), 0210 nano-technology, business, Joule heating, Reset (computing), Technology CAD, Model

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88a9a568786f1b57b2e1ce0dbf4ec356
https://doi.org/10.1109/ted.2016.2632712

المؤلفون: Huang, Peng, Zhu, Dongbin, Chen, Sijie, Zhou, Zheng, Chen, Zhe, Gao, Bin, Liu, Lifeng, Liu, Xiaoyan, Kang, Jinfeng

المساهمون: Huang, P (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China.

المصدر: SCI

مصطلحات موضوعية: Electronic synapse, neuromorphic computing, pattern classification, stochastic learning, RESISTIVE-SWITCHING MEMORY, METAL-OXIDE RRAM, SYSTEMS, SYNAPSES, NETWORK, COMPUTATION

Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES.2017,64(2),614-621.; 1909943; http://hdl.handle.net/20.500.11897/475425; WOS:000394691600040

الاتاحة: https://hdl.handle.net/20.500.11897/475425
https://doi.org/10.1109/TED.2016.2643162

المؤلفون: Jiang, Yuning, Kang, Jinfeng, Wang, Xinan

المساهمون: Jiang, YN, Kang, JF (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Wang, XN (reprint author), Peking Univ, Key Lab Integrated Microsyst, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Key Lab Integrated Microsyst, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China.

المصدر: SCI

مصطلحات موضوعية: METAL-OXIDE RRAM, NEUROMORPHIC SYSTEMS, DEVICE, ALGORITHMS, MEMORY

Relation: SCIENTIFIC REPORTS.2017,7.; 1908889; http://hdl.handle.net/20.500.11897/474498; WOS:000397293100001

الاتاحة: https://hdl.handle.net/20.500.11897/474498
https://doi.org/10.1038/srep45233

المؤلفون: PANWAR, N, KHANNA, A, KUMBHARE, P, CHAKRABORTY, I, GANGULY, U

مصطلحات موضوعية: Metal-Oxide Rram, Devices, Model, Memory, Pr0.7ca0.3mno3 (Pcmo), Rram, Self-Heating, Transient Iv

Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES,64(1)137-144; http://dx.doi.org/10.1109/TED.2016.2632712

الاتاحة: https://doi.org/10.1109/TED.2016.2632712

المؤلفون: Zhao, Yudi, Huang, Peng, Chen, Zhe, Liu, Chen, Li, Haitong, Chen, Bing, Ma, Wenjia, Zhang, Feifei, Gao, Bin, Liu, Xiaoyan, Kang, Jinfeng

المساهمون: Zhao, YD, Huang, P, Chen, Z, Liu, C, Li, HT, Chen, B, Ma, WJ, Zhang, FF, Gao, B, Liu, XY, Kang, JF (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China.

المصدر: EI ; SCI

مصطلحات موضوعية: Monte Carlo simulation, oxygen vacancies, phase transition (P-T), resistive random access memory (RRAM), resistive switching (RS), TaOx, RESISTIVE SWITCHING MEMORIES, METAL-OXIDE RRAM, TANTALUM-PENTOXIDE, DEVICES

Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES.2016,63,(4),1524-1532.; 1394912; http://hdl.handle.net/20.500.11897/437514; WOS:000373063800018

الاتاحة: https://hdl.handle.net/20.500.11897/437514
https://doi.org/10.1109/TED.2016.2532470

المؤلفون: Liu, Lifeng, Hou, Yi, Chen, Bing, Gao, Bin, Kang, Jinfeng

المساهمون: Liu, LF (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China.

المصدر: SCI ; EI

مصطلحات موضوعية: METAL-OXIDE RRAM, MODEL

Relation: JAPANESE JOURNAL OF APPLIED PHYSICS.2015,54,(9).; 1293239; http://hdl.handle.net/20.500.11897/416568; WOS:000362024900029

الاتاحة: https://hdl.handle.net/20.500.11897/416568
https://doi.org/10.7567/JJAP.54.094201

المؤلفون: Li, Haitong, Gao, Bin, Chen, Hong-Yu, Chen, Zhe, Huang, Peng, Liu, Rui, Zhao, Liang, Jiang, Zizhen, Liu, Lifeng, Liu, Xiaoyan, Yu, Shimeng, Kang, Jinfeng, Nishi, Yoshi, Wong, H.S. Philip

المساهمون: Li, HT (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA., Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85281 USA.

المصدر: SCI ; EI

مصطلحات موضوعية: 3-D array, optimization, reliability, resistive random access memory (RRAM), variability, RANDOM-ACCESS MEMORY, METAL-OXIDE RRAM, DEVICES, MODEL, SIMULATION

Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES.2015,62,(10),3160-3167.; 1290406; http://hdl.handle.net/20.500.11897/415993; WOS:000361684000008

الاتاحة: https://hdl.handle.net/20.500.11897/415993
https://doi.org/10.1109/TED.2015.2468602

المؤلفون: Chen, Zhe, Zhang, Feifei, Chen, Bing, Zheng, Yang, Gao, Bin, Liu, Lifeng, Liu, Xiaoyan, Kang, Jinfeng

المساهمون: Kang, JF (reprint author), Peking Univ, Inst Microelect, 5 Yiheyuan Rd, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, 5 Yiheyuan Rd, Beijing 100871, Peoples R China.

المصدر: EI ; SCI ; PubMed

مصطلحات موضوعية: RRAM, Cross-point array, Atomic layer deposition (ALD), METAL-OXIDE RRAM, PARAMETER VARIATION, OPERATION, DEVICE, RERAM, TEMPERATURE, RETENTION, MODEL

Relation: NANOSCALE RESEARCH LETTERS.2015,10.; 649709; http://hdl.handle.net/20.500.11897/291358; WOS:000350686600001

الاتاحة: https://hdl.handle.net/20.500.11897/291358
https://doi.org/10.1186/s11671-015-0738-1

المؤلفون: Zheng, L Zheng, Le, Shin, S Shin, Sangho, Kang, SMS Kang, Sung-Mo Steve

مصطلحات موضوعية: METAL-OXIDE RRAM, SENSING SCHEME, SPICE MODEL, LARGE-SCALE, DEVICES, CIRCUIT, CAM, ARCHITECTURE, TCAM, SWITCHES

الاتاحة: http://hdl.handle.net/10203/192929
https://doi.org/10.1088/0268-1242/29/10/104010

المؤلفون: Deng, Yexin, Huang, Peng, Chen, Bing, Yang, Xiaolin, Gao, Bin, Wang, Juncheng, Zeng, Lang, Du, Gang, Kang, Jinfeng, Liu, Xiaoyan

المساهمون: Deng, YX (reprint author), Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China.

المصدر: EI ; SCI

مصطلحات موضوعية: Crossbar, leakage path, memory array, nonlinearity, readout margin, resistive random access memory (RRAM), selection device, selector, METAL-OXIDE RRAM, SWITCHING PARAMETER VARIATION, HIGH-DENSITY, MEMORY, DESIGN

Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES.2013,60,(2,SI),719-726.; 837039; http://hdl.handle.net/20.500.11897/291771; WOS:000316817900026

الاتاحة: https://hdl.handle.net/20.500.11897/291771
https://doi.org/10.1109/TED.2012.2231683

المؤلفون: Yu, Shimeng, Chen, Hong-Yu, Gao, Bin, Kang, Jinfeng, Wong, H.S. Philip

المساهمون: Yu, SM (reprint author), Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA., Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA., Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China.

المصدر: SCI ; EI

مصطلحات موضوعية: resistive switching, RRAM, cross-point array, HfO2, bit-cost-effective, 3D integration, METAL-OXIDE RRAM, NONVOLATILE MEMORY, PARAMETER VARIATION, DATA-STORAGE, DEVICE, NANOFILAMENTS, MECHANISM, MODEL

Relation: ACS NANO.2013,7,(3),2320-2325.; 837775; http://hdl.handle.net/20.500.11897/226408; WOS:000316846700049

الاتاحة: https://hdl.handle.net/20.500.11897/226408
https://doi.org/10.1021/nn305510u