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1Academic Journal
المؤلفون: Cristoloveanu, S., Mohaghegh, A., de Pontcharra, J.
المصدر: ISSN: 0302-072X ; Journal de Physique Lettres ; https://hal.science/jpa-00231768 ; Journal de Physique Lettres, 1980, 41 (9), pp.235-237. ⟨10.1051/jphyslet:01980004109023500⟩.
مصطلحات موضوعية: double injecting p sup, nn sup, structures, carrier density, electric sensing devices, elemental semiconductors, magnetic variables measurement, Schottky barrier diodes, semiconductor doping, silicon, integrated magnetic sensor, silicon on sapphire Schottky magnetodiode, Schottky magnetodiode, magnetodiode effect, carrier density modulation, Schottky reverse current, magnetosensitivities, 10 V T, geometrical parameters, injection rate, doping level, device sensitivity, [PHYS.HIST]Physics [physics]/Physics archives
Relation: jpa-00231768; https://hal.science/jpa-00231768; https://hal.science/jpa-00231768/document; https://hal.science/jpa-00231768/file/ajp-jphyslet_1980_41_9_235_0.pdf
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2Academic Journal
المؤلفون: Cristoloveanu, S., Chovet, A., Kamarinos, G.
المصدر: ISSN: 0035-1687.
مصطلحات موضوعية: carrier lifetime, carrier mobility, electron hole recombination, Hall effect, metal insulator semiconductor structures, semiconductor thin films, silicon, thin SOS films, magnetodiode effect, surface recombination velocities, carrier bulk lifetime, Hall mobilities, Si SiO sub 2 interface, drift electron mobility, semiconductor structure, [PHYS.HIST]Physics [physics]/Physics archives
Relation: jpa-00244512; https://hal.archives-ouvertes.fr/jpa-00244512; https://hal.archives-ouvertes.fr/jpa-00244512/document; https://hal.archives-ouvertes.fr/jpa-00244512/file/ajp-rphysap_1978_13_12_615_0.pdf
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3
المؤلفون: A. Chovet, S. Cristoloveanu, G. Kamarinos
المصدر: Revue de Physique Appliquée
Revue de Physique Appliquée, Société française de physique / EDP, 1978, 13 (12), pp.615-618. ⟨10.1051/rphysap:019780013012061500⟩مصطلحات موضوعية: magnetodiode effect, semiconductor structure, Electron mobility, drift electron mobility, Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, electron hole recombination, Hall effect, 0103 physical sciences, carrier mobility, Hall mobilities, thin SOS films, 010302 applied physics, surface recombination velocities, Condensed matter physics, carrier lifetime, business.industry, silicon, Carrier lifetime, 021001 nanoscience & nanotechnology, chemistry, metal insulator semiconductor structures, carrier bulk lifetime, [PHYS.HIST]Physics [physics]/Physics archives, Sapphire, Optoelectronics, semiconductor thin films, 0210 nano-technology, Transport phenomena, business, Recombination, Order of magnitude, Si SiO sub 2 interface