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1Report
المؤلفون: Cui M, Zhou TF, Wang MR, Huang J, Huang HJ, Zhang JP, Xu K, Yang H, Cui, M (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China, tfzhou2007@sinano.ac.cn, kxu2006@sinano.ac.cn
مصطلحات موضوعية: Light-emitting-diodes, Temperature-measurements, Gan, Scattering, Dependence, Junction, Phonons, Aln, 半导体器件, light emitting diodes, temperature measurements, potential scattering, dependency, leds (light emitting diodes), led, organic light emitting diodes, oled, polymer led, superluminescent diodes, led (diodes), light-emitting diodes, leds, organic led, light emitting diode, 计温学, thermometers and thermometry, heat--measurement, heat measurements, temperature--measurement, thermometry
Relation: JOURNAL OF PHYSICS D-APPLIED PHYSICS; Cui M; Zhou TF; Wang MR; Huang J; Huang HJ; Zhang JP; Xu K; Yang H.Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(35):355101; http://ir.semi.ac.cn/handle/172111/22771
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2Report
المؤلفون: Liu JQ, Wang JF, Gong XJ, Huang J, Xu K, Zhou TF, Zhong HJ, Qiu YX, Cai DM, Ren GQ, Yang H, Xu, K, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China. kxu2006@sinano.ac.cn
مصطلحات موضوعية: Output Voltage, Nanowires, Nanogenerators, Growth, 光电子学, development, atomic wires, molecular wires, quantum wires, subnanoscale wires, semiconductor nanowires, semiconductor quantum wires, quantum wire lasers, nano-sized wires, nano scale wires, nano wires, nanoscale wires, 展开, ontogeny, alloy development, 增长性, animal growth, hypertrophy, maturing, growth rate (animals)
Relation: APPLIED PHYSICS EXPRESS; Liu JQ; Wang JF; Gong XJ; Huang J; Xu K; Zhou TF; Zhong HJ; Qiu YX; Cai DM; Ren GQ; Yang H.Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays,APPLIED PHYSICS EXPRESS,2011,4(4):Article no.45001; http://ir.semi.ac.cn/handle/172111/20975
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3ReportDetermination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction
المؤلفون: Liu, JQ (Liu, J. Q.), Wang, JF (Wang, J. F.), Qiu, YX (Qiu, Y. X.), Guo, X (Guo, X.), Huang, K (Huang, K.), Zhang, YM (Zhang, Y. M.), Hu, XJ (Hu, X. J.), Xu, Y (Xu, Y.), Xu, K (Xu, K.), Huang, XH (Huang, X. H.), Yang, H (Yang, H.), Xu, K, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: kxu2006@sinano.ac.cn
مصطلحات موضوعية: Thin-films, 光电子学, thin films, films, thin, solid film, dielectric thin films, epitaxial layers, high-k dielectric thin films, insulating thin films, low-k dielectric thin films, semimetallic thin films, superconducting epitaxial layers, superconducting superlattices, superconducting thin films, duennfilme, films minces
Relation: SEMICONDUCTOR SCIENCE AND TECHNOLOGY; Liu, JQ (Liu, J. Q.); Wang, JF (Wang, J. F.); Qiu, YX (Qiu, Y. X.); Guo, X (Guo, X.); Huang, K (Huang, K.); Zhang, YM (Zhang, Y. M.); Hu, XJ (Hu, X. J.); Xu, Y (Xu, Y.); Xu, K (Xu, K.); Huang, XH (Huang, X. H.); Yang, H (Yang, H.) .Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,DEC 2009 ,24(12):Art.No.125007; http://ir.semi.ac.cn/handle/172111/7509