نتائج البحث - "koji Sueoka"

1

Academic Journal

Revisiting single-crystal silicon oxidation: A comprehensive analysis of crystal structural transformation to SiO2

المؤلفون: Eiji Kamiyama, Koji Sueoka

المصدر: AIP Advances, Vol 14, Iss 7, Pp 075217-075217-10 (2024)

مصطلحات موضوعية: Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2158-3226

URL الوصول: https://doaj.org/article/75973c4b47ba470a8378e7dc8958af1c

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2

Academic Journal

Surface Recrystallization Model of Fully Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate

المؤلفون: Koji Kobayashi, Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Ryo Hirose, Akihiro Suzuki, Sho Nagatomo, Yoshihiro Koga, Koji Sueoka, Kazunari Kurita

المصدر: Crystals, Vol 14, Iss 9, p 748 (2024)

مصطلحات موضوعية: molecular ion implantation, solid phase epitaxial growth, kinetic Monte Carlo simulation, Crystallography, QD901-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2073-4352/14/9/748; https://doaj.org/toc/2073-4352

URL الوصول: https://doaj.org/article/07fe0759e4b44756b9bb841d8deaa157

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3

Academic Journal

Method for estimating elastic modulus of doped semiconductors by using ab initio calculations—Doping effect on Young’s modulus of silicon crystal

المؤلفون: Eiji Kamiyama, Koji Sueoka

المصدر: AIP Advances, Vol 13, Iss 8, Pp 085224-085224-6 (2023)

مصطلحات موضوعية: Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2158-3226

URL الوصول: https://doaj.org/article/27808c436e1c4b15b9a145d67f7ecf26

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4

Academic Journal

TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface

المؤلفون: Koji Kobayashi, Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Ryo Hirose, Akihiro Suzuki, Yoshihiro Koga, Koji Sueoka, Kazunari Kurita

المصدر: Crystals, Vol 14, Iss 2, p 112 (2024)

مصطلحات موضوعية: molecular ion implantation, thermal annealing treatment, solid phase epitaxial growth, Crystallography, QD901-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2073-4352/14/2/112; https://doaj.org/toc/2073-4352

URL الوصول: https://doaj.org/article/a8bb5c1b932441e8b25416d9901fe0d9

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5

Academic Journal

Numerical simulations considering effects of thermal stress and impurities on the behavior of intrinsic point defects in Si crystal growing by Cz method / 不純物と熱応力の効果を考慮したCz法によるシリコン単結晶成長における点欠陥挙動に関する数値解析

المؤلفون: Koji Sueoka, Yuji Mukaiyama, 向山裕次, 末岡浩治

المصدر: 日本結晶成長学会誌 / Journal of the Japanese Association for Crystal Growth. 2023, 49(4):49-02

6

Academic Journal

Theoretical Studies on Point Defects and Impurities in Semiconductor Crystal Structures by First-Principles Calculations / 第一原理計算による半導体結晶中の点欠陥・不純物の理論研究

المؤلفون: Koji Sueoka, Yusuke Noda, 末岡浩治, 野田祐輔

المصدر: 日本結晶成長学会誌 / Journal of the Japanese Association for Crystal Growth. 2023, 49(4):49-01

7

Academic Journal

CZ-Si結晶成長中の点欠陥挙動に与える窒素の影響 (3) / Effect of nitrogen doping on intrinsic point defect behavior in growing CZ-Si crystal

المؤلفون: Koji Sueoka, Masataka Hourai, Motoharu Taniguchi, 宝来正隆, 末岡浩治, 谷口元春

المصدر: JSAP Annual Meetings Extended Abstracts. 2020, :2161

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8

Academic Journal

Analysis of metal gettering in pn junctions by Hakoniwa method / 「箱庭法」を用いた，pn接合部に対する金属元素のゲッタリング解析

المؤلفون: Eiji Kamiyama, Hiroki Nagakura, Koji Sueoka, 末岡浩治, 永倉大樹, 神山栄治

المصدر: JSAP Annual Meetings Extended Abstracts. 2020, :2164

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9

Academic Journal

First principles analysis of H-doping impact on intrinsic point defect behavior in growing CZ-Si crystal (3) / HドープCZ-Si結晶成長中の点欠陥挙動に関する第一原理解析(3)

المؤلفون: Koji Sueoka, Masataka Hourai, Takuya Kusunoki, Wataru Sugimura, 宝来正隆, 末岡浩治, 杉村渉, 楠木琢也

المصدر: JSAP Annual Meetings Extended Abstracts. 2020, :2162

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10

Academic Journal

Influence of Plane Stress on the Stability of Metal Impurities in Si Crystal / Si結晶中の金属不純物の安定性に与える平面応力の影響

المؤلفون: Hiroya Iwashiro, Kazuhisa Torigoe, Koji Sueoka, Toshiaki Ono, 小野敏昭, 岩城浩也, 末岡浩治, 鳥越和尚

المصدر: JSAP Annual Meetings Extended Abstracts. 2020, :2163

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11

Academic Journal

ANNポテンシャルによるSi結晶中の安定な原子空孔クラスターの形態検証 / Verification of stable vacancy clusters in Si crystal using ANN potential

المؤلفون: Eiji Kamiyama, Hiroki Nagakura, Koji Sueoka, Masato Ohbitsu, Takuto Ushiro, Tatsuya Yokoi, Yusuke Noda, 大櫃万聖, 後口拓登, 末岡浩治, 横井達矢, 永倉大樹, 神山栄治, 野田祐輔

المصدر: JSAP Annual Meetings Extended Abstracts. 2020, :2160

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12

Academic Journal

ANNポテンシャルを用いたSi結晶中の原子空孔クラスターに関する大規模計算(2) / Large-scale atomic level calculation of vacancy clusters in Si crystal using ANN potential (2)

المؤلفون: Eiji Kamiyama, Hiroki Nagakura, Koji Sueoka, Masato Ohbitsu, Takuto Ushiro, Tatsuya Yokoi, Yusuke Noda, 大櫃万聖, 後口拓登, 末岡浩治, 横井達矢, 永倉大樹, 神山栄治, 野田祐輔

المصدر: JSAP Annual Meetings Extended Abstracts. 2021, :2718

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13

Academic Journal

As-grown Si単結晶中の格子間Si系欠陥形態の考察 / Structural consideration of self-interstitial-type defects in as-grown Si crystals

المؤلفون: Eiji Kamiyama, Koji Sueoka, 末岡浩治, 神山栄治

المصدر: JSAP Annual Meetings Extended Abstracts. 2021, :2720

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14

Academic Journal

Gettering Sinks for Metallic Impurities Formed by Carbon-Cluster Ion Implantation in Epitaxial Silicon Wafers for CMOS Image Sensor

المؤلفون: Ayumi Onaka-Masada, Ryosuke Okuyama, Satoshi Shigematsu, Hidehiko Okuda, Takeshi Kadono, Ryo Hirose, Yoshihiro Koga, Koji Sueoka, Kazunari Kurita

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 1200-1206 (2018)

مصطلحات موضوعية: Atom prove tomography, CMOS image sensors, gettering, ion implantation, silicon, TCAD simulation, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8477004/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/27b63c310e5b456287a39010d802efb6

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15

Academic Journal

First principles analysis on the impact of surface oxide film on the stability and diffusion barrier in the depth direction of metal atoms / 酸化膜がSiウェーハ表面近傍の金属原子の安定性と拡散障壁に与える影響

المؤلفون: Koji Sueoka, Noriyuki Nonoda, 末岡浩治, 野々田典敬

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3681

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16

Academic Journal

Band Structure Analysis of the Bulk Lifetime-Control Defects in Silicon Crystals for Power Device Application / パワーデバイス用 Si 結晶中のライフタイム制御欠陥のバンド構造解析

المؤلفون: Daiki Tsuchiya, Hidekazu Yamamoto, Koji Sueoka, 土屋大輝, 山本秀和, 末岡浩治

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3680

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17

Academic Journal

First-principles analysis on the behavior of metal atom near dopant complex in Si crystal / Si結晶中のドーパント複合体近傍における重金属の挙動に関する第一原理解析

المؤلفون: Hiroki Nagakura, Koji Sueoka, 末岡浩治, 永倉大樹

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3677

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18

Academic Journal

CZ-Si結晶成長中の点欠陥挙動に与える窒素の影響 / Effect of nitrogen doping on intrinsic point defect behavior in growing CZ-Si crystal

المؤلفون: Koji Sueoka, Masataka Hourai, Motoharu Taniguchi, 宝来正隆, 末岡浩治, 谷口元春

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3679

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19

Academic Journal

Consideration of the determining mechanism of oxygen solubility in a Si crystal / シリコン結晶中における酸素固溶度を決定するメカニズムの考察

المؤلفون: Eiji Kamiyama, Koji Sueoka, 末岡浩治, 神山栄治

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3683

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20

Academic Journal

Influence of Stress on the Stability of Metal Impurities in Si Crystal / Si結晶中の金属不純物の安定性に与える応力の影響

المؤلفون: Hiroya Iwashiro, Kazuhisa Torigoe, Koji Sueoka, Toshiaki Ono, 小野敏昭, 岩城浩也, 末岡浩治, 鳥越和尚

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3682

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