المؤلفون: Lucas Barroso Spejo, Lars Knoll, Renato Amaral Minamisawa

المصدر: Electronics ; Volume 13 ; Issue 22 ; Pages: 4548

مصطلحات موضوعية: SiC PiN diode, SiC Junction Barrier Schottky (JBS) diode, SiC MOSFET, Si IGBT, hybrid topology, neutral point clamped inverter (NPC), power electronics, power losses

وصف الملف: application/pdf

Relation: Industrial Electronics; https://dx.doi.org/10.3390/electronics13224548

الاتاحة: https://doi.org/10.3390/electronics13224548

المؤلفون: Zhikang Wu, Yun Bai, Chengyue Yang, Chengzhan Li, Jilong Hao, Xiaoli Tian, Antao Wang, Yidan Tang, Jiang Lu, Xinyu Liu

المصدر: Electronics; Volume 12; Issue 9; Pages: 2133

مصطلحات موضوعية: heavy ions, junction barrier Schottky (JBS) diode, silicon carbide (SiC), power device, single event effects

وصف الملف: application/pdf

Relation: Circuit and Signal Processing; https://dx.doi.org/10.3390/electronics12092133

الاتاحة: https://doi.org/10.3390/electronics12092133

المؤلفون: Kjarsgaard, Benjamin Futtrup, Yan, Zhixing, Dalal, Dipen Narandra, Jorgensen, Jannick Kjar, Beczkowski, Szymon, Bech, Michael Moller, Uhrenfeldt, Christian, Zhao, Hongbo, Munk-Nielsen, Stig

المصدر: Kjarsgaard , B F , Yan , Z , Dalal , D N , Jorgensen , J K , Beczkowski , S , Bech , M M , Uhrenfeldt , C , Zhao , H & Munk-Nielsen , S 2024 , Comprehensive Analysis of Switching Effects from External Anti-Parallel 10 kV JBS Diode . in 2024 IEEE 10th International Power Electronics and Motion Control Conference, IPEMC 2024 ECCE Asia . IEEE Signal Processing Society , 2024 IEEE 10th International Power Electronics and Motion Control Conference, IPEMC 2024 ECCE Asia , pp. 132-139 , 10th IEEE International Power Electronics and ....

مصطلحات موضوعية: Capacitive couplings, Junction Barrier Schottky (JBS) diode, Silicon Carbide (SiC) MOSFET, Switching losses

Relation: urn:ISBN:9798350351330

الاتاحة: https://vbn.aau.dk/da/publications/1210d795-16cd-425f-ac75-20fb6676b778
https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567354
http://www.scopus.com/inward/record.url?scp=85199085754&partnerID=8YFLogxK

المؤلفون: Witulski, A. F., Arslanbekov, R., Raman, A., Schrimpf, R. D., Sternberg, A., Galloway, K. F., Javanainen, Arto, Grider, D., Lichtenwalner, D. J., Hull, B.

مصطلحات موضوعية: single event effects, heavy ions, silicon carbide, power diodes, junction barrier schottky (JBS) diode, single-event burnout, thermal coefficients of silicon carbide

وصف الملف: 256-261; application/pdf

Relation: IEEE Transactions on Nuclear Science; 65; CONVID_27817017

الاتاحة: http://urn.fi/URN:NBN:fi:jyu-201801251329

المؤلفون: Rusch, Oleg, Moult, Jonathan, Erlbacher, Tobias

مصطلحات موضوعية: 4H-SiC, Junction Barrier Schottky (JBS) Diode, trench, Schottky Barrier Lowering, Design Study, ohmic contact

Time: 670, 620, 530

Relation: European Conference on Silicon Carbide and Related Materials (ECSCRM) 2018; Silicon Carbide and Related Materials 2018; https://publica.fraunhofer.de/handle/publica/405312

الاتاحة: https://publica.fraunhofer.de/handle/publica/405312
https://doi.org/10.4028/www.scientific.net/MSF.963.549

المؤلفون: A. F. Witulski, David Grider, Ashok Raman, Andrew L. Sternberg, Kenneth F. Galloway, Daniel J. Lichtenwalner, Robert R. Arslanbekov, Arto Javanainen, Brett Hull, Ronald D. Schrimpf

المصدر: IEEE Transactions on Nuclear Science. 65:256-261

مصطلحات موضوعية: Nuclear and High Energy Physics, Materials science, single-event burnout, Schottky barrier, power diodes, 01 natural sciences, Ion, chemistry.chemical_compound, silicon carbide, Electric field, 0103 physical sciences, Silicon carbide, thermal coefficients of silicon carbide, Power semiconductor device, Electrical and Electronic Engineering, heavy ions, Diode, 010302 applied physics, ta114, 010308 nuclear & particles physics, business.industry, Schottky diode, High voltage, single event effects, junction barrier schottky (JBS) diode, Nuclear Energy and Engineering, chemistry, Optoelectronics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7be6e16a9a1fa8a9d135f75d5948ceb5
https://doi.org/10.1109/tns.2017.2782227

المؤلفون: Schöck, Johannes, Büttner, Jonas, Rommel, Mathias, Erlbacher, Tobias, Bauer, Anton

مصطلحات موضوعية: Junction Barrier Schottky (JBS) Diode, DBC-Mounted, Floating Field Rings, 4H-SiC, Leistungselektronik

Time: 670, 620, 530

Relation: European Conference on Silicon Carbide and Related Materials (ECSCRM) 2016; Silicon carbide and related materials 2016; https://publica.fraunhofer.de/handle/publica/395947

الاتاحة: https://publica.fraunhofer.de/handle/publica/395947
https://doi.org/10.4028/www.scientific.net/MSF.897.427

المؤلفون: Lim, Jang-Kwon, Reshanov, Sergey A., Kaplan, Wlodek, Zhang, Andy Zhenzhong, Hjort, Tomas, Schöner, Adolf, Bakowski, Mietek, Nee, Hans-Peter

المصدر: Materials Science Forum. :600-603

مصطلحات موضوعية: 4H-SiC, Buried grid (BG), Junction barrier schottky (JBS) diode, Schottky barrier diode (SBD), Contact resistance, Diodes, High temperature operations, Leakage currents, Mixer circuits, Silicon carbide, Forward voltage drops, Increasing temperatures, Junction barrier Schottky diodes, Reverse characteristics, Schottky Barrier Diode(SBD), Temperature dependent, Schottky barrier diodes

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-35459

المؤلفون: Lim, Jang-Kwon, Peftitsis, Dimosthenis, Sadik, Diane-Perle, Bakowski, Mietek, Nee, Hans-Peter, 1963

المصدر: StandUp 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013. :804-807

مصطلحات موضوعية: 4H-SiC, Buried grid (BG), Junction barrier schottky (JBS) diode, Schottky barrier diode (SBD), Diodes, High temperature operations, Recovery, Schottky barrier diodes, Commercial Devices, IV characteristics, Junction barrier Schottky diodes, Reverse recovery current, Schottky Barrier Diode(SBD), Simulations and measurements, Silicon carbide, SRA - Energy, SRA - Energi

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-27964

المؤلفون: Schöck, Johannes, Büttner, Jonas, Rommel, Mathias, Erlbacher, Tobias, Bauer, Anton

مصطلحات موضوعية: Junction Barrier Schottky (JBS) Diode, DBC-Mounted, Floating Field Rings, 4H-SiC, Leistungselektronik

Time: 670, 620, 530

وصف الملف: application/pdf

Relation: European Conference on Silicon Carbide and Related Materials (ECSCRM) 2016; SPEED; 604057; https://publica.fraunhofer.de/handle/publica/394095

الاتاحة: https://publica.fraunhofer.de/handle/publica/394095
https://doi.org/10.24406/publica-fhg-394095