-
1Academic Journal
المؤلفون: Apparao, Maganti, Karunakar, Godi
المساهمون: Muwave Components Research and Development PVT. LTD. (MWCRD), Ghaziabad, India
المصدر: Bulletin of Electrical Engineering and Informatics; Vol 12, No 5: October 2023; 2878-2886 ; 2302-9285 ; 2089-3191 ; 10.11591/eei.v12i5
مصطلحات موضوعية: communication, Frequency reconfigurable, Input impedance, Microstrip, Radio frequency P-intrinsic-N diodes, Switching state
وصف الملف: application/pdf
-
2Academic Journal
المؤلفون: Maganti Apparao, Godi Karunakar
مصطلحات موضوعية: Frequency reconfigurable, Input impedance, Microstrip, Radio frequency P-intrinsic-N diodes, Switching state
Relation: https://doi.org/10.11591/eei.v12i5.4052; oai:zenodo.org:8141580
-
3Academic Journal
المؤلفون: Yuchuan Pan (11654335), Xiaochi Liu (1747405), Junqiang Yang (6496415), Won Jong Yoo (1747411), Jian Sun (27858)
مصطلحات موضوعية: Biochemistry, Medicine, Cell Biology, Physiology, Biotechnology, Cancer, Plant Biology, Space Science, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, realize multifunctional diodes, emerging nanoelectronics based, vertical tunnel diode, generation nanoelectronics due, different doping conditions, 2 sub, controlling carrier transport, type doping, thicknesses due, carrier type, vertical mote, different mote, type characteristic, tunable properties, subsequently achieved, realizing heterojunctions, potential candidates, metal dichalcogenide, intrinsic n, desired performances
-
4Academic Journal
المؤلفون: Yuchuan Pan, Xiaochi Liu, Junqiang Yang, Won Jong Yoo, Jian Sun
مصطلحات موضوعية: Biochemistry, Medicine, Cell Biology, Physiology, Biotechnology, Cancer, Plant Biology, Space Science, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, realize multifunctional diodes, emerging nanoelectronics based, vertical tunnel diode, generation nanoelectronics due, different doping conditions, 2 sub, controlling carrier transport, type doping, thicknesses due, carrier type, vertical mote, different mote, type characteristic, tunable properties, subsequently achieved, realizing heterojunctions, potential candidates, metal dichalcogenide, intrinsic n, desired performances