المؤلفون: ALAVI, Omid, DE CEUNINCK, Ward, DAENEN, Michael

المساهمون: Daenen, Michael/0000-0002-9221-4932, ALAVI, Omid, DE CEUNINCK, Ward, DAENEN, Michael

مصطلحات موضوعية: finite element method (FEM), Gaussian process regression (GPR), insulated gate bipolar transistors (IGBTs), machine learning, power electronics reliability, solder voids

وصف الملف: application/pdf

Relation: Electronics (Basel), 13 (11) (Art N° 2188); http://hdl.handle.net/1942/43350; 11; 13; 001246836600001

الاتاحة: http://hdl.handle.net/1942/43350
https://doi.org/10.3390/electronics13112188

المؤلفون: Lipeng Zhong, Wei Liu, Youqing Sun, Feng Wang, She Chen, Qiuqin Sun, Yufeng Liu, Chao Yuan, Xiaopeng Li, Guanghai Fei

المصدر: Materials & Design, Vol 233, Iss , Pp 112220- (2023)

مصطلحات موضوعية: Stereolithography 3D printing, Graded permittivity materials, Microelectronics encapsulation, Insulated gate bipolar transistors (IGBTs), Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S0264127523006354; https://doaj.org/toc/0264-1275

URL الوصول: https://doaj.org/article/612300dd81e6449aa34b2e11bb8205a3

المؤلفون: Weiran Chen, Songyang Zhang, Venkata Dinavahi

المصدر: IEEE Open Journal of Power Electronics, Vol 3, Pp 168-181 (2022)

مصطلحات موضوعية: Artificial neural network (ANN), electromagnetic transients, field-programmable gate arrays (FPGAs), hardware-in-the-loop (HIL), insulated-gate bipolar transistors (IGBTs), International Space Station (ISS), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9737411/; https://doaj.org/toc/2644-1314

URL الوصول: https://doaj.org/article/da3a893d606b42cdb92ec38ed58740d9

المؤلفون: Malik, Azra, Haque, Ahteshamul, Kurukuru, V S Bharath, Khan, Mohammed Ali, Blaabjerg, Frede

مصطلحات موضوعية: Grid-connected PV systems (GCPS), Insulated gate bipolar transistors (IGBTs), Physics of failure (PoF), Fault diagnosis, Capacitor, Condition monitoring (CM)

وصف الملف: text; 1-30; application/pdf

Relation: e-Prime - Advances in Electrical Engineering, Electronics and Energy; https://www.sciencedirect.com/science/article/pii/S2772671122000079; e-Prime - Advances in Electrical Engineering, Electronics and Energy. 2022, vol. 2, issue 1, p. 1-30.; 178391; http://hdl.handle.net/11012/208137

الاتاحة: http://hdl.handle.net/11012/208137
https://doi.org/10.1016/j.prime.2022.100035

المؤلفون: Mauricio Ferramola, Juan Manuel, Olives Camps, Juan Carlos, Maza Ortega, José María, Gómez Expósito, Antonio

المساهمون: Universidad de Sevilla. Departamento de Ingeniería Eléctrica, Universidad de Sevilla. TEP196: Sistemas de Energía Eléctrica, MCIN/AEI/10.13039/501100011033 PID2021-127835OB-I00, MCIN/AEI/10.13039/501100011033 PID2021-124571OB-I00

مصطلحات موضوعية: Insulated-gate bipolar transistors (IGBTs), Junction temperature consideration, Power system simulation, Thermal modeling, Two-level voltage source converter (VSC)

Relation: International Journal of Electrical Power & Energy Systems, 155 (109672).; PID2021-127835OB-I00; PID2021-124571OB-I00; https://www.sciencedirect.com/science/article/pii/S0142061523007299; https://idus.us.es/handle//11441/152591

الاتاحة: https://idus.us.es/handle//11441/152591

المؤلفون: Weiran Chen, Songyang Zhang, Venkata Dinavahi

مصطلحات موضوعية: Artificial neural network (ANN), electromagnetic transients, field-programmable gate arrays (FPGAs), hardware-in-the-loop (HIL), insulated-gate bipolar transistors (IGBTs), International Space Station (ISS), low voltage direct current (LVDC), machine learning (ML), microgrid (MG), photovoltaic, recurrent neural network (RNN), renewable energy, real-time systems, solar array wings (SAWs)

Relation: https://era.library.ualberta.ca/items/b37e22bf-eeca-4a52-bc98-1e8bc5a8b837

الاتاحة: https://era.library.ualberta.ca/items/b37e22bf-eeca-4a52-bc98-1e8bc5a8b837
https://doi.org/10.7939/r3-q46v-3z98

المؤلفون: Zarghani, Mostafa, Peyghami, Saeed, Iannuzzo, Francesco, Blaabjerg, Frede, Kaboli, Shahriyar

المصدر: Zarghani , M , Peyghami , S , Iannuzzo , F , Blaabjerg , F & Kaboli , S 2022 , ' Voltage Balancing of Series IGBTs in Short-Circuit Conditions ' , I E E E Transactions on Power Electronics , vol. 37 , no. 5 , 9635680 , pp. 5675-5686 . https://doi.org/10.1109/TPEL.2021.3132456

مصطلحات موضوعية: Clamp Mode Snubber, series insulated gate bipolar transistors (IGBTs), short-circuit fault, voltage balancing, /dk/atira/pure/sustainabledevelopmentgoals/affordable_and_clean_energy, name=SDG 7 - Affordable and Clean Energy

وصف الملف: application/pdf

الاتاحة: https://vbn.aau.dk/da/publications/b249c89c-4d26-4ba4-ab26-435df4ac09cd
https://doi.org/10.1109/TPEL.2021.3132456
https://vbn.aau.dk/ws/files/455505179/Paper_ZGH_10_5_2021.pdf
http://www.scopus.com/inward/record.url?scp=85120905461&partnerID=8YFLogxK

المؤلفون: Yuan Zhu, Mingkang Xiao, Xiezu Su, Ke Lu, Zhihong Wu, Gang Yang

المصدر: IEEE Access, Vol 8, Pp 114401-114412 (2020)

مصطلحات موضوعية: Insulated gate bipolar transistors (IGBTs), active short circuit (ASC) mode, locked-rotor mode, thermal models, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9121237/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/b63c13caabdb458ca9fe550c04618971

المؤلفون: Zarghani, Mostafa, Iannuzzo, Francesco, Blaabjerg, Frede, Kaboli, Shahriyar

المصدر: Zarghani , M , Iannuzzo , F , Blaabjerg , F & Kaboli , S 2024 , ' A Distributed Turn-Off Delay Compensator Scheme for Voltage Balancing of Series-Connected IGBTs ' , IEEE Journal of Emerging and Selected Topics in Power Electronics , vol. 12 , no. 3 , 10504839 , pp. 2545-2557 . https://doi.org/10.1109/JESTPE.2024.3390845

مصطلحات موضوعية: Delays, Gate drivers, Insulated gate bipolar transistors, Logic gates, Switches, Switching circuits, Voltage, turn-off delay time adjustment, Series insulated gate bipolar transistors (IGBTs), voltage balancing

الاتاحة: https://vbn.aau.dk/da/publications/e284a88c-0c5d-4424-9bbe-b5eaf4053a0c
https://doi.org/10.1109/JESTPE.2024.3390845
http://www.scopus.com/inward/record.url?scp=85190793474&partnerID=8YFLogxK

المؤلفون: Sousa, Tiago José Cunha, Monteiro, Vítor Duarte Fernandes, Nova, Bruno Pereira, Passos, Paulo Frederico Costeira, Cunha, José Maria Cerqueira, Afonso, João L.

المساهمون: Universidade do Minho

مصطلحات موضوعية: Power semiconductors, Parallel association, Insulated Gate Bipolar Transistors (IGBTs), Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), Engenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informática

وصف الملف: application/pdf

Relation: Tiago J. C. Sousa, Vítor Monteiro, Bruno Nova, Frederico Passos, José Cunha, João L. Afonso, “Parallel Association of Power Semiconductors: An Experimental Evaluation with IGBTs and MOSFETs” in 3rd International Young Engineers Forum (YEF-ECE), pp. 8-13, Costa da Caparica, Portugal, 10 May 2019. DOI: 10.1109/YEF-ECE.2019.8740817; 978-1-5386-9282-0; https://ieeexplore.ieee.org/document/8740817

الاتاحة: http://hdl.handle.net/1822/67340

المؤلفون: Zhang, Y., Wang, H., Wang, Z., Blaabjerg, F.

المصدر: Zhang , Y , Wang , H , Wang , Z & Blaabjerg , F 2019 , ' Computational-Efficient Thermal Estimation for IGBT Modules under Periodic Power Loss Profiles in Modular Multilevel Converters ' , IEEE Transactions on Industry Applications , vol. 55 , no. 5 , 8747388 , pp. 4984 - 4992 . https://doi.org/10.1109/TIA.2019.2925590

مصطلحات موضوعية: Estimation, Computational modeling, Reliability, Insulated gate bipolar transistors, Thermal analysis, Analytical models, Modular multilevel converters, Error analysis, insulated gate bipolar transistors (IGBTs), modular multilevel converters (MMCs), Insulated-gate bipolar transistors (IGBTs)

وصف الملف: application/pdf

Relation: https://vbn.aau.dk/da/publications/776faa21-aee7-43e0-9f53-3c2299a2e3f8

الاتاحة: https://vbn.aau.dk/da/publications/776faa21-aee7-43e0-9f53-3c2299a2e3f8
https://doi.org/10.1109/TIA.2019.2925590
https://vbn.aau.dk/ws/files/308357956/Computational_Efficient_Thermal_Estimation_for_IGBT_Modules_under_Periodic_Power_Loss_Profiles_in_Modular_Multilevel_Converters.pdf
http://www.scopus.com/inward/record.url?scp=85071325237&partnerID=8YFLogxK

المؤلفون: Fernandez, Manuel, Perpina, Xavier, Vellvehi, Miquel, Aviñó Salvadó, Oriol, Llorente, Sergio, Jorda, Xavier

المساهمون: Consejo Superior de Investigaciones Científicas (España), Ministerio de Ciencia, Innovación y Universidades (España), Generalitat de Catalunya, orcid

مصطلحات موضوعية: Current distribution sensing by lock-in thermography | infrared (IR) imaging | insulated gate bipolar transistors (IGBTs) | power losses measurement | thermal measurements

Relation: #PLACEHOLDER_PARENT_METADATA_VALUE#; info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/RTI2018-098392-B-I00/ES/BLOQUES ELEMENTALES DE ALTAS PRESTACIONES Y ROBUSTOS PARA CONVERTIDORES DE POTENCIA BASADOS EN MATRICES DE CELDAS DE CONMUTACION/; IEEE Transactions on Power Electronics; Postprint; http://doi.org/10.1109/TPEL.2019.2942830; Sí; http://hdl.handle.net/10261/345289; http://dx.doi.org/10.13039/501100002809; http://dx.doi.org/10.13039/501100003339; 2-s2.0-85080867342; https://api.elsevier.com/content/abstract/scopus_id/85080867342

الاتاحة: http://hdl.handle.net/10261/345289
https://doi.org/10.1109/TPEL.2019.2942830
https://doi.org/10.13039/501100002809
https://doi.org/10.13039/501100003339
https://api.elsevier.com/content/abstract/scopus_id/85080867342

المؤلفون: Rannestad, Bjørn, Munk-Nielsen, Stig, Gadgaard, Kristian, Uhrenfeldt, Christian

المصدر: Rannestad , B , Munk-Nielsen , S , Gadgaard , K & Uhrenfeldt , C 2020 , ' Statistical Method of Estimating Semiconductor Switching Transition Time enabling Condition Monitoring of Megawatt Converters ' , I E E E Transactions on Instrumentation and Measurement , vol. 69 , no. 6 , 8812625 , pp. 3654-3665 . https://doi.org/10.1109/TIM.2019.2937407

مصطلحات موضوعية: Insulated-gate bipolar transistors (IGBTs), monitoring, sampling methods

وصف الملف: application/pdf

الاتاحة: https://vbn.aau.dk/da/publications/0d7454d7-462e-4232-86ee-10466997a8c3
https://doi.org/10.1109/TIM.2019.2937407
https://vbn.aau.dk/ws/files/319161546/Stat_Switch_time_detection_final_version.pdf
http://www.scopus.com/inward/record.url?scp=85084916634&partnerID=8YFLogxK

المؤلفون: Yang, Yanyong, Wu, Yang, Ding, Xiaofeng, Zhang, Pinjia

المصدر: Yang , Y , Wu , Y , Ding , X & Zhang , P 2023 , ' A Novel Thermal Management Method for Enhancing the Consistency of IGBT Heat Stress in Converter ' , IEEE Transactions on Industrial Electronics , vol. 70 , no. 10 , pp. 10628-10638 . https://doi.org/10.1109/TIE.2022.3222685

مصطلحات موضوعية: Converters, heat stress, insulated gate bipolar transistors (IGBTs), power semiconductor devices, reliability, thermal management

الاتاحة: https://vbn.aau.dk/da/publications/d3b84855-5966-4894-9b08-0eb0e8c9f990
https://doi.org/10.1109/TIE.2022.3222685
http://www.scopus.com/inward/record.url?scp=85144017662&partnerID=8YFLogxK

المؤلفون: Bahman, Amir Sajjad, Ma, Ke, Blaabjerg, Frede

المصدر: Bahman , A S , Ma , K & Blaabjerg , F 2018 , ' A Lumped Thermal Model Including Thermal Coupling and Thermal Boundary Conditions for High Power IGBT Modules ' , I E E E Transactions on Power Electronics , vol. 33 , no. 3 , 7903728 , pp. 2518 - 2530 . https://doi.org/10.1109/TPEL.2017.2694548

مصطلحات موضوعية: Boundary conditions, Finite-element method (FEM), Insulated gate bipolar transistors (IGBTs), Power converters, Reliability, Thermal modeling

وصف الملف: application/pdf

الاتاحة: https://vbn.aau.dk/da/publications/913fdc7b-d834-4d6f-bb1d-7669d2f63613
https://doi.org/10.1109/TPEL.2017.2694548
https://vbn.aau.dk/ws/files/255685288/TPEL_final_version_Amir.pdf
http://www.scopus.com/inward/record.url?scp=85038922171&partnerID=8YFLogxK

المؤلفون: Frede Blaabjerg, Huai Wang, Yi Zhang, Zhongxu Wang

المصدر: Zhang, Y, Wang, H, Wang, Z & Blaabjerg, F 2019, ' Computational-Efficient Thermal Estimation for IGBT Modules under Periodic Power Loss Profiles in Modular Multilevel Converters ', IEEE Transactions on Industry Applications, vol. 55, no. 5, 8747388, pp. 4984-4992 . https://doi.org/10.1109/TIA.2019.2925590

مصطلحات موضوعية: Modular multilevel converters (MMCs), Computer science, 020209 energy, Computation, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, insulated gate bipolar transistors (IGBTs), insulated-gate bipolar transistors (IGBTs), Industrial and Manufacturing Engineering, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Thermal analysis, Analytical models, Electrical and Electronic Engineering, Uncertainty analysis, Reliability (statistics), Modular multilevel converters, reliability, Product design, business.industry, 020208 electrical & electronic engineering, Bipolar junction transistor, Computational modeling, Insulated-gate bipolar transistor, Modular design, Converters, Insulated gate bipolar transistors, Error analysis, Control and Systems Engineering, business, Estimation

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::940aace92dc668b88528d86d0c9e7289
https://doi.org/10.1109/tia.2019.2925590

المؤلفون: Zhang, Yi, Wang, Huai, Wang, Zhongxu, Yang, Yongheng, Blaabjerg, Frede

المصدر: Zhang , Y , Wang , H , Wang , Z , Yang , Y & Blaabjerg , F 2017 , Impact of lifetime model selections on the reliability prediction of IGBT modules in modular multilevel converters . in Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE) . IEEE Press , IEEE Energy Conversion Congress and Exposition , pp. 4202-4207 , 2017 IEEE Energy Conversion Congress and Exposition (ECCE) , Cincinnati, Ohio , United States , 01/10/2017 . https://doi.org/10.1109/ECCE.2017.8096728

مصطلحات موضوعية: Insulated gate bipolar transistors (IGBTs), Lifetime model, Modular Multilevel Converter, Power semiconductor device, Reliability

وصف الملف: application/pdf

الاتاحة: https://vbn.aau.dk/da/publications/3e5f687c-0a53-4709-9005-71a6ce730bae
https://doi.org/10.1109/ECCE.2017.8096728
https://vbn.aau.dk/ws/files/265423700/PID4901173.pdf

المؤلفون: Bjørn Rannestad, Kristian Gadgaard, Christian Uhrenfeldt, Stig Munk-Nielsen

المصدر: Rannestad, B, Munk-Nielsen, S, Gadgaard, K & Uhrenfeldt, C 2020, ' Statistical Method of Estimating Semiconductor Switching Transition Time enabling Condition Monitoring of Megawatt Converters ', I E E E Transactions on Instrumentation and Measurement, vol. 69, no. 6, 8812625, pp. 3654-3665 . https://doi.org/10.1109/TIM.2019.2937407

مصطلحات موضوعية: Physics, Wind power, Field (physics), business.industry, 020208 electrical & electronic engineering, Bipolar junction transistor, Condition monitoring, 02 engineering and technology, Insulated-gate bipolar transistor, Converters, Topology, sampling methods, monitoring, Insulated-gate bipolar transistors (IGBTs), Logic gate, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, business, Instrumentation, Voltage

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6bb925a45036bd4bdc50bf0765b545a9
https://doi.org/10.1109/tim.2019.2937407

المؤلفون: TANRIVERDÄ°, OSMAN, YILDIRIM, DENÄ°Z

المصدر: Turkish Journal of Electrical Engineering and Computer Sciences

مصطلحات موضوعية: Closed-loop gate drive, insulated-gate bipolar transistors (IGBTs), switching losses, turn-on and turn-off energy, Computer Engineering, Computer Sciences, Electrical and Computer Engineering

وصف الملف: application/pdf

Relation: https://journals.tubitak.gov.tr/elektrik/vol30/iss3/2; https://journals.tubitak.gov.tr/context/elektrik/article/3793/viewcontent/Independent_closed_loop_control_of_di_dt_and_dv_dt_for_high_power.pdf

الاتاحة: https://journals.tubitak.gov.tr/elektrik/vol30/iss3/2
https://doi.org/10.55730/1300-0632.3793
https://journals.tubitak.gov.tr/context/elektrik/article/3793/viewcontent/Independent_closed_loop_control_of_di_dt_and_dv_dt_for_high_power.pdf

المؤلفون: Xiao Mingkang, Xiezu Su, Gang Yang, Lu Ke, Yuan Zhu, Zhihong Wu

المصدر: IEEE Access, Vol 8, Pp 114401-114412 (2020)

مصطلحات موضوعية: thermal models, Materials science, General Computer Science, Insulated gate bipolar transistors (IGBTs), Rotor (electric), business.industry, Thermal resistance, General Engineering, locked-rotor mode, Hardware_PERFORMANCEANDRELIABILITY, Insulated-gate bipolar transistor, Cooling flow, Automotive engineering, law.invention, Semiconductor, law, Hardware_INTEGRATEDCIRCUITS, Inverter, General Materials Science, Junction temperature, lcsh:Electrical engineering. Electronics. Nuclear engineering, active short circuit (ASC) mode, business, lcsh:TK1-9971, Short circuit

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f9f93c77dbb9b87a1395ba88b816bdc
https://doi.org/10.1109/access.2020.3003654