المؤلفون: Andrey K. Kaveev, Vladimir V. Fedorov, Alexander V. Pavlov, Dmitry V. Miniv, Ratmir V. Ustimenko, Aleksandr Goltaev, Liliia. N. Dvoretckaia, Alexey M. Mozharov, Sergey V. Fedina, Demid A. Kirilenko, Maxim Ya. Vinnichenko, Karim J. Mynbaev, Ivan S. Mukhin

مصطلحات موضوعية: Biophysics, Biochemistry, Biotechnology, Ecology, Space Science, Environmental Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, transmission electron microscopy, recently gained attention, ray diffraction reveal, band gap engineering, dilute nitride inasn, two growth strategies, 5 – 0, wurtzite inasn structure, wurtzite phase, synthesize inasn, inasn nanowires, studied structure, crystal structure, spectral sensitivity, results demonstrate, promising materials, photoluminescent properties, photoluminescence measurement, optical properties, nitrogen content, infrared optoelectronics, independent control

Relation: https://figshare.com/articles/journal_contribution/Growth_Crystal_Structure_and_Photoluminescent_Properties_of_Dilute_Nitride_InAsN_Nanowires_on_Silicon_for_Infrared_Optoelectronics/25119699

الاتاحة: https://doi.org/10.1021/acsanm.3c06295.s001
https://figshare.com/articles/journal_contribution/Growth_Crystal_Structure_and_Photoluminescent_Properties_of_Dilute_Nitride_InAsN_Nanowires_on_Silicon_for_Infrared_Optoelectronics/25119699