المؤلفون: Jung Rae Cho, Donghyun Ryu, Donguk Kim, Wonjung Kim, Yeonwoo Kim, Changwook Kim, Yoon Kim, Myounggon Kang, Jiyong Woo, Dae Hwan Kim

المصدر: IEEE Journal of the Electron Devices Society, Vol 13, Pp 1-7 (2025)

مصطلحات موضوعية: FLASH, in-memory computing, SPICE modeling, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10778276/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/84b9e31d29264ed8bef631101160da46

المؤلفون: Jinglin Sun, Qilai Chen, Fei Fan, Zeyulin Zhang, Tingting Han, Zhilong He, Zhixin Wu, Zhe Yu, Pingqi Gao, Dazheng Chen, Bin Zhang, Gang Liu

المصدر: Fundamental Research, Vol 4, Iss 6, Pp 1666-1673 (2024)

مصطلحات موضوعية: Memristor, Neuromorphic device, Organic electronics, In-memory computing, In-sensor computing, Machine vision, Science (General), Q1-390

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S266732582200303X; https://doaj.org/toc/2667-3258

URL الوصول: https://doaj.org/article/2d9b54a94f704373bc93ac1f9c45b517

المؤلفون: Khaled Humood, Yihan Pan, Shiwei Wang, Alexander Serb, Themis Prodromakis

المصدر: Frontiers in Electronics, Vol 6 (2025)

مصطلحات موضوعية: in-memory-computing, ANN, accelerators, analog-computing, aggregator, accumulator, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://www.frontiersin.org/articles/10.3389/felec.2025.1513127/full; https://doaj.org/toc/2673-5857

URL الوصول: https://doaj.org/article/70e19363bde042288dd0cd10633b9f5b

المؤلفون: Woochul Kim, Dante Ahn, Minz Lee, Namsoo Lim, Hyeonghun Kim, Yusin Pak

المصدر: Small Science, Vol 4, Iss 12, Pp n/a-n/a (2024)

مصطلحات موضوعية: bipolar photoresponses, in‐memory computing, multifunctional logics, optoelectronic logic gates, reconfigurable logics, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2688-4046

URL الوصول: https://doaj.org/article/d88c47d7bc304c29abfc24e0152102c1

المؤلفون: Yalong Zhang, Qiuxiang Zhu, Bobo Tian, Chungang Duan

المصدر: Nano-Micro Letters, Vol 16, Iss 1, Pp 1-31 (2024)

مصطلحات موضوعية: AlScN, Ferroelectrics, Nonvolatile memory, In-memory computing, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2311-6706; https://doaj.org/toc/2150-5551

URL الوصول: https://doaj.org/article/68e25f72ec32451196919a0ff7cabbdd

المؤلفون: Mahan Rezaei, Abdolah Amirany, Mohammad Hossein Moaiyeri, Kian Jafari

المصدر: Engineering Reports, Vol 6, Iss 11, Pp n/a-n/a (2024)

مصطلحات موضوعية: associative memory, emerging technologies, in‐memory computing, neural network, nonvolatility, spintronic synapse and neuron, Engineering (General). Civil engineering (General), TA1-2040, Electronic computers. Computer science, QA75.5-76.95

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2577-8196

URL الوصول: https://doaj.org/article/0a6cdcb044df44778848f407641869cb

المؤلفون: Abinand Nallathambi, Christin David Bose, Wilfried Haensch, Anand Raghunathan

المصدر: Frontiers in Artificial Intelligence, Vol 7 (2024)

مصطلحات موضوعية: in-memory computing, analog accelerator, quantization, reinforcement learning, mixed integer linear programming, Electronic computers. Computer science, QA75.5-76.95

وصف الملف: electronic resource

Relation: https://www.frontiersin.org/articles/10.3389/frai.2024.1268317/full; https://doaj.org/toc/2624-8212

URL الوصول: https://doaj.org/article/c7e96859d51e449fb0a70648eeac127d

المؤلفون: Tatiana Moposita, Esteban Garzón, Adam Teman, Marco Lanuzza

المصدر: Nanomaterials, Vol 15, Iss 1, p 9 (2024)

مصطلحات موضوعية: STT-MRAM, SMTJ, DMTJ, magnetic tunnel junction, in-memory computing, material implication, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-4991/15/1/9; https://doaj.org/toc/2079-4991

URL الوصول: https://doaj.org/article/adc9c60278fa4ed38557a6dfa56d683e

المؤلفون: Jaemin Son, Juhee Jeon, Kyoungah Cho, Sangsig Kim

المصدر: Advanced Electronic Materials, Vol 10, Iss 7, Pp n/a-n/a (2024)

مصطلحات موضوعية: diode, in‐memory computing, positive feedback mechanism, quasi‐nonvolatile memory, stateful logic, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/93b9535a7c8c4f7ebc1d366e3fe1c01e

المؤلفون: Heorhii Bohuslavskyi, Kestutis Grigoras, Mário Ribeiro, Mika Prunnila, Sayani Majumdar

المصدر: Advanced Electronic Materials, Vol 10, Iss 7, Pp n/a-n/a (2024)

مصطلحات موضوعية: analog memory, cryogenic memory, ferroelectric hafnia, ferroelectric memory capacitor, in‐memory computing, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/e47c65e525c34c9abdc9b9aa6605e1d2

المؤلفون: Jinyong Wang, Yujing Ren, Ze Yang, Qiaoya Lv, Yu Zhang, Mingyue Zhang, Tiancheng Zhao, Deen Gu, Fucai Liu, Baoshan Tang, Weifeng Yang, Zhiqun Lin

المصدر: Advanced Science, Vol 11, Iss 22, Pp n/a-n/a (2024)

مصطلحات موضوعية: in‐memory computing, ion migration, memristor, oxygen vacancies, tunable filaments, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2198-3844

URL الوصول: https://doaj.org/article/af518ae1efde4b9ab37b3427ad90050e

المؤلفون: Hyunjeong Kwak, Nayeon Kim, Seonuk Jeon, Seyoung Kim, Jiyong Woo

المصدر: Nano Convergence, Vol 11, Iss 1, Pp 1-24 (2024)

مصطلحات موضوعية: ECRAM, Artificial intelligence, Low-power electronics, Neuromorphic computing, In-memory computing, Neural chips, Technology, Chemical technology, TP1-1185, Biotechnology, TP248.13-248.65, Science, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2196-5404

URL الوصول: https://doaj.org/article/138be585c4b34ab4843fdedcd4bd9cea

المؤلفون: Hangbo Zhou, Sifan Li, Kah-Wee Ang, Yong-Wei Zhang

المصدر: Nano-Micro Letters, Vol 16, Iss 1, Pp 1-30 (2024)

مصطلحات موضوعية: 2D materials, Memristors, Memtransistors, Crossbar array, In-memory computing, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2311-6706; https://doaj.org/toc/2150-5551

URL الوصول: https://doaj.org/article/13b93b7e33cb4db2bed9d73fb09400b5

المؤلفون: Prathamesh Prashant Rege, Ming Yin, Sanjay Parihar, Joseph Versaggi, Shashank Nemawarkar

المصدر: IEEE Access, Vol 12, Pp 190889-190896 (2024)

مصطلحات موضوعية: Batch normalization, binary neural network, edge device, in-memory computing, process variation, SRAM, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10639963/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/771dfe3f27e6483293c536acc86afa1d

المؤلفون: Keming Fan, Ashkan Moradifirouzabadi, Xiangjin Wu, Zheyu Li, Flavio Ponzina, Anton Persson, Eric Pop, Tajana Rosing, Mingu Kang

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 161-169 (2024)

مصطلحات موضوعية: Hardware-software co-design, hyperdimensional computing (HD), in-memory computing (IMC), instruction set architecture (ISA), mass spectrometry (MS), phase change memory (PCM), Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10753646/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/b9983216cb7447a1b7b68b0dc504f965

المؤلفون: Christian Simonides, Dominik Gausepohl, Peter M. Hinkel, Fabian Seiler, Nima Taherinejad

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 135-143 (2024)

مصطلحات موضوعية: Adder, approximate computing (AxC), image processing, in-memory computing (IMC), machine learning, memristor, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10752571/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/b83acae63e50436880ddfe2fa22d4478

المؤلفون: Giacomo Pedretti, John Moon, Pedro Bruel, Sergey Serebryakov, Ron M. Roth, Luca Buonanno, Archit Gajjar, Lei Zhao, Tobias Ziegler, Cong Xu, Martin Foltin, Paolo Faraboschi, Jim Ignowski, Catherine E. Graves

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 116-124 (2024)

مصطلحات موضوعية: Content addressable memories (CAMs), decision trees, in-memory computing, RRAM, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10753423/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/a602a5141d5341bda6924b89239da5ec

المؤلفون: Anyi Zhu, Lei Jin, Wen Zhou, Tianchun Ye, Zongliang Huo

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 23-27 (2024)

مصطلحات موضوعية: Self-organizing map (SOM), 3D NAND Flash, competitive learning, in-memory computing, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10333078/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/50c97da1380d47cd8a8d943392c14e72

المؤلفون: Alaba Yusuf, Tosiron Adegbija, Dhruv Gajaria

المصدر: IEEE Access, Vol 12, Pp 28036-28056 (2024)

مصطلحات موضوعية: Domain-specific architectures, in-memory computing, spin-transfer torque magnetic RAM, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10433539/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/5c177aafd6094fa5b7eb425e49c65b01

المؤلفون: Saion K. Roy, Naresh R. Shanbhag

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 22-30 (2024)

مصطلحات موضوعية: Embedded nonvolatile memory (eNVM), ferroelectric field effect transistor (FeFET), in-memory computing (IMC), magnetoresistive random access memory (MRAM), parallel bar, resistive random access memory (ReRAM), Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10478888/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/28107b97e2f8428e821dcc1d60abbe85