المؤلفون: Iturbe, X., Ebrahim, A., Benkrid, K., Hong, C., Arslan, T., Perez, J., Keymeulen, D., SANTAMBROGIO, MARCO DOMENICO

المساهمون: Iturbe, X., Ebrahim, A., Benkrid, K., Hong, C., Arslan, T., Perez, J., Keymeulen, D., Santambrogio, MARCO DOMENICO

مصطلحات موضوعية: embedded system, fault tolerant computing, field programmable gate array, operating systems (computers), rail traffic, traction, traffic engineering computing, AFTS system, R3TOS-based autonomous fault-tolerant system, R3TOS-based inverter controller, Xilinx partially-reconfigurable field-programmable gate array, electronics technology, real-world railway traction system, reliable reconfigurable realtime operating system, ilicon substrate, Circuit fault, Fault tolerance, Integrated circuit, Pulse width modulation, Real-time system, Reconfigurable architecture, Runtime, Synchronization, Table lookup, R3TOS, real-time and embedded system, reconfigurable hardware

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000346634000004; volume:34; issue:6; firstpage:20; lastpage:30; numberofpages:11; journal:IEEE MICRO; http://hdl.handle.net/11311/964455; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84919680118

الاتاحة: http://hdl.handle.net/11311/964455
https://doi.org/10.1109/MM.2014.58

المؤلفون: SAYADI, LUCA, G. Iannaccone, O. Häberlen, G. Fiori, M. Tomberger, L. O. Knuuttila, CURATOLA, GILBERTO

المساهمون: Sayadi, Luca, Iannaccone, G., Häberlen, O., Fiori, G., Tomberger, M., Knuuttila, L. O., Curatola, Gilberto

مصطلحات موضوعية: III-V semiconductor, aluminium compound, capacitance, elemental semiconductor, gallium compound, leakage current, emiconductor epitaxial layer, emiconductor growth, ilicon, wide band gap semiconductor, AlN-Si, GaN-on-Si epitaxial stack, Si depletion region, carrier generation, considered structure, current-voltage characteristic, device simulation, electrical characterization, n-doped silicon, n-type structure, p-Si substrate, p-type structure, ilicon substrate, vertical leakage, Aluminum nitride, Electron trap, Epitaxial growth, Silicon, Substrate, Tunneling

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000418753200008; volume:65; issue:1; firstpage:51; lastpage:58; numberofpages:8; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; http://hdl.handle.net/11568/909403; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85037659972

الاتاحة: http://hdl.handle.net/11568/909403
https://doi.org/10.1109/TED.2017.2773670