المؤلفون: Clint Sweeney, Donald Y. C. Lie, Jill C. Mayeda, Jerry Lopez

المصدر: Applied Sciences, Vol 14, Iss 23, p 11429 (2024)

مصطلحات موضوعية: fifth generation (5G), 6G, front-end module (FEM), high-electron-mobility-transistor (HEMT), half power beam width (HPBW), millimeter wave (mm-Wave), Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2076-3417/14/23/11429; https://doaj.org/toc/2076-3417

URL الوصول: https://doaj.org/article/2a2efce5012a414495ad1195bcd99196

المؤلفون: Xiaolong Li, Xin Wang, Mohan Liu, Kunfeng Zhu, Guohua Shui, Qiwen Zheng, Jiangwei Cui, Wu Lu, Yudong Li, Qi Guo

المصدر: IEEE Access, Vol 12, Pp 35410-35416 (2024)

مصطلحات موضوعية: p-GaN high-electron-mobility transistor (HEMT), low dose rate irradiation, gate leakage, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10443472/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/5e137cc1f052421786d1919f9d516eda

المؤلفون: Junjie Li, Johan Bergsten, Arsalan Pourkabirian, Jan Grahn

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 243-248 (2024)

مصطلحات موضوعية: Drain noise temperature, InP high-electron-mobility transistor (HEMT), indium channel, low-noise amplifier (LNA), qubit amplification, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10454583/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/6ab426f8d1854ca4955498db08225d60

المؤلفون: Artillan, Philippe, Íñiguez-De-La-Torre, Ignacio, Paz-Martínez, Gaudencio, Rochefeuille, Edouard, García-Sánchez, Sergio, González, Tomás, Mateos, Javier

المساهمون: Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes (CROMA), Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Departamento de Fisica Aplicada Salamanca, Universidad de Salamanca España = University of Salamanca Spain

المصدر: ISSN: 0018-9480 ; IEEE Transactions on Microwave Theory and Techniques ; https://hal.science/hal-04712776 ; IEEE Transactions on Microwave Theory and Techniques, 2024, 72 (10), pp.6044 - 6048. ⟨10.1109/TMTT.2024.3390834⟩.

مصطلحات موضوعية: square law detector, sub-Thz detection, zero-bias detector, CMOS detector, high-electron-mobility transistor (HEMT) detector, responsivity, [SPI.TRON]Engineering Sciences [physics]/Electronics

الاتاحة: https://hal.science/hal-04712776
https://hal.science/hal-04712776v1/document
https://hal.science/hal-04712776v1/file/2024_MTT_nportmodel_Multiport_square_law_detectors_PREPRINT.pdf
https://doi.org/10.1109/TMTT.2024.3390834

المؤلفون: García-Sánchez, Sergio, Íñiguez-De-La-Torre, Ignacio, Paz-Martínez, Gaudencio, Artillan, Philippe, González, Tomás, Mateos, Javier

المساهمون: Universidad de Salamanca España = University of Salamanca Spain, Departamento de Fisica Aplicada Salamanca, Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry ), Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes (CROMA), Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )

المصدر: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-04712779 ; IEEE Transactions on Electron Devices, 2024, 71 (8), pp.4556-4562. ⟨10.1109/TED.2024.3413713⟩.

مصطلحات موضوعية: Analytical model, GAN, high-electron mobility transistor (HEMT), microwave detector, Monte Carlo (MC) simulations, power detector, responsivity model, terahertz (THz) detectors, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

الاتاحة: https://hal.science/hal-04712779
https://hal.science/hal-04712779v1/document
https://hal.science/hal-04712779v1/file/2024TED_mchemts___Analysis_of_THz_Responsivity__preprint_.pdf
https://doi.org/10.1109/TED.2024.3413713

المؤلفون: Soyeon Seo, Jinho Lee, Yongho Lee, Hyunchol Shin

المصدر: Sensors, Vol 24, Iss 4, p 1087 (2024)

مصطلحات موضوعية: phase shifter, phase calibration technique, gallium nitride (GaN), high electron mobility transistor (HEMT), 28 GHz, Chemical technology, TP1-1185

Relation: https://www.mdpi.com/1424-8220/24/4/1087; https://doaj.org/toc/1424-8220; https://doaj.org/article/8b263b1e6bf94554b401aaf73841ca77

الاتاحة: https://doi.org/10.3390/s24041087
https://doaj.org/article/8b263b1e6bf94554b401aaf73841ca77

المؤلفون: Mebarki, Mohamed Aniss, 1993, Ferrand-Drake Del Castillo, Ragnar, 1993, Pavolotskiy, Alexey, 1968, Meledin, Denis, 1974, Sundin, Erik, 1979, Thorsell, Mattias, 1982, Rorsman, Niklas, 1964, Belitsky, Victor, 1955, Desmaris, Vincent, 1977

المصدر: Physica Status Solidi (A) Applications and Materials Science. 220(8)

مصطلحات موضوعية: Cryogenic, High electron mobility transistor (HEMT), Superconductivity, Gallium Nitride (GaN), Niobium (Nb)

وصف الملف: electronic

URL الوصول: https://research.chalmers.se/publication/533301
https://research.chalmers.se/publication/533574
https://research.chalmers.se/publication/533610
https://research.chalmers.se/publication/533610/file/533610_Fulltext.pdf

المؤلفون: Reza Nikandish

المصدر: IEEE Journal of Microwaves, Vol 3, Iss 1, Pp 441-452 (2023)

مصطلحات موضوعية: Distributed amplifier, Doherty power amplifier, Gallium Nitride (GaN), high-electron mobility transistor (HEMT), integrated circuit, mm-Wave, Telecommunication, TK5101-6720, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9962239/; https://doaj.org/toc/2692-8388

URL الوصول: https://doaj.org/article/f65e3ee38d21405a8819ff9592ec66c1

المؤلفون: Junji Kotani, Junya Yaita, Kenji Homma, Shirou Ozaki, Atsushi Yamada, Masaru Sato, Toshihiro Ohki, Norikazu Nakamura

المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 101-106 (2023)

مصطلحات موضوعية: AlN, GaN, high-electron-mobility transistor (HEMT), SiN, high breakdown, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10012041/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/579d0f3250cb4141af3604f80d5ed5d0

المؤلفون: Mingqiang Geng, Giovanni Crupi, Jialin Cai

المصدر: IEEE Access, Vol 11, Pp 27267-27279 (2023)

مصطلحات موضوعية: Behavioral modeling, black box model, gallium nitride (GaN), high-electron-mobility transistor (HEMT), long-short term memory (LSTM), microwave frequency, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10075428/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/30ccd858eaca4ae38da88d799de21a95

المؤلفون: Nicholas C. Miller, Andrea Arias-Purdue, Erdem Arkun, David Brown, James F. Buckwalter, Robert L. Coffie, Andrea Corrion, Daniel J. Denninghoff, Michael Elliott, Dave Fanning, Ryan Gilbert, Daniel S. Green, Florian Herrault, Ben Heying, Casey M. King, Eythan Lam, Jeong-Sun Moon, Petra V. Rowell, Georges Siddiqi, Ioulia Smorchkova, Joe Tai, Jansen Uyeda, Mike Wojtowicz

المصدر: IEEE Journal of Microwaves, Vol 3, Iss 4, Pp 1134-1146 (2023)

مصطلحات موضوعية: Gallium nitride (GaN), high electron mobility transistor (HEMT), noise parameters, low noise amplifier, Telecommunication, TK5101-6720, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10260709/; https://doaj.org/toc/2692-8388

URL الوصول: https://doaj.org/article/5804e21f09df408e99c176f577a6bee9

المؤلفون: Hult, Björn, 1993, Bergsten, Johan, 1988, Ferrand-Drake Del Castillo, Ragnar, 1993, Darakchieva, Vanya, Malmros, Anna, 1977, Hjelmgren, Hans, 1960, Thorsell, Mattias, 1982, Rorsman, Niklas, 1964

المصدر: Center for III Nitride semiconductor technology (C3NiT) fas2 Avancerade GaN-komponenter för mm och sub-mmvågs kommunikation IEEE Transactions on Electron Devices. 71(12):7383-7389

مصطلحات موضوعية: drain-induced barrier lowering (DIBL), Drain current injection technique (DCIT), high electron mobility transistor (HEMT), short-channel effect (SCE), GaN

URL الوصول: https://research.chalmers.se/publication/543958

المؤلفون: Phuc Hong Than, Tho Quang Than

المصدر: e-Journal of Surface Science and Nanotechnology. 2023, 22(1):9

المؤلفون: Martínez, Pedro J., Maset Sancho, Enrique, P. Martín-Holgado, Morilla, Yolanda, Sanchis Kilders, Esteban, Gilabert Palmer, David

المصدر: Martínez, P.J.; Maset, E.; Martín-Holgado, P.; Morilla, Y.; Gilabert, D.; Sanchis-Kilders, E. Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs. Materials 2019, 12, 2760. https://doi.org/10.3390/ma12172760

مصطلحات موضوعية: electrònica, física, electrònica materials, high-electron-mobility transistor (HEMT), gallium nitride (GaN), radiation hardness, assurance testing, radiation effects, total ionizing dose (TID)

وصف الملف: application/pdf

Relation: Materials, 2019, vol. 12, num. 17, p. 1-15; https://hdl.handle.net/10550/91370; 140103

الاتاحة: https://hdl.handle.net/10550/91370
https://doi.org/10.3390/ma12172760

المؤلفون: Gugliandolo, G, Crupi, G, Vadala, V, Raffo, A, Donato, N, Vannini, G

المساهمون: Gugliandolo, G, Crupi, G, Vadala, V, Raffo, A, Donato, N, Vannini, G

مصطلحات موضوعية: Current-gain peak (CGP), fitting, gallium nitride (GaN), high-electron-mobility transistor (HEMT), parameter extraction, scattering parameter measurements

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000986576500001; volume:33; issue:7; firstpage:1007; lastpage:1010; numberofpages:4; journal:IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS; https://hdl.handle.net/11392/2523950; https://ieeexplore.ieee.org/document/10113479

الاتاحة: https://hdl.handle.net/11392/2523950
https://doi.org/10.1109/LMWT.2023.3264904
https://ieeexplore.ieee.org/document/10113479

المؤلفون: Hyo-Jin Kim, In-Geun Lee, Hyeon-Bhin Jo, Tae-Beom Rho, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Tae-Woo Kim, Dae-Hyun Kim

المصدر: Electronics, Vol 12, Iss 259, p 259 (2023)

مصطلحات موضوعية: small-signal model (SSM), high-electron-mobility transistor (HEMT), cut-off frequency ( f T ), output conductance ( g o ), Electronics, TK7800-8360

Relation: https://www.mdpi.com/2079-9292/12/2/259; https://doaj.org/toc/2079-9292; https://doaj.org/article/3732609a0d594fafb5e289fdc26d5d1c

الاتاحة: https://doi.org/10.3390/electronics12020259
https://doaj.org/article/3732609a0d594fafb5e289fdc26d5d1c

المؤلفون: Mebarki, Mohamed Aniss, 1993

مصطلحات موضوعية: superconductivity, High Electron Mobility Transistor (HEMT), Low Noise Amplifier (LNA), Cryogenic temperatures, Niobium (Nb), Radio-astronomy, Gallium Nitride (GaN), high frequency, RFI

وصف الملف: electronic

URL الوصول: https://research.chalmers.se/publication/533304
https://research.chalmers.se/publication/533304/file/533304_Fulltext.pdf

المؤلفون: Pragyey Kumar Kaushik, Sankalp Kumar Singh, Ankur Gupta, Ananjan Basu, Edward Yi Chang

المصدر: Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-9 (2021)

مصطلحات موضوعية: Gallium nitride (GaN), High-electron-mobility transistor (HEMT), Two-dimensional electron gas (2-DEG), Surface traps, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/a1c649dcff7949e69e91da169519e408

المؤلفون: Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 687-690 (2021)

مصطلحات موضوعية: GaN, high electron mobility transistor (HEMT), indium–tin–oxide gate electrode, PBTI, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9480594/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/62d9ad8fc9cf4cc3a126b23577723831

المؤلفون: Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 2-5 (2021)

مصطلحات موضوعية: GaN, high electron mobility transistor (HEMT), indium–tin–oxide gate electrode, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9223718/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/e88bdee7d92a42968b3d4ce3ce86174b