المؤلفون: Wonnyoung Jeong, Sijun Kim, Youngseok Lee, Chulhee Cho, Inho Seong, Yebin You, Minsu Choi, Jangjae Lee, Youbin Seol, Shinjae You

المصدر: Materials; Volume 16; Issue 10; Pages: 3820

مصطلحات موضوعية: plasma processing, plasma etching, high-aspect ratio SiO 2 etching, etching rate, individual plasma internal parameter control, ion flux, ion energy

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/ma16103820

الاتاحة: https://doi.org/10.3390/ma16103820

المؤلفون: Wonnyoung Jeong, Sijun Kim, Youngseok Lee, Chulhee Cho, Inho Seong, Yebin You, Minsu Choi, Jangjae Lee, Youbin Seol, Shinjae You

المصدر: Materials, Vol 16, Iss 10, p 3820 (2023)

مصطلحات موضوعية: plasma processing, plasma etching, high-aspect ratio SiO 2 etching, etching rate, individual plasma internal parameter control, ion flux, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85

Relation: https://www.mdpi.com/1996-1944/16/10/3820; https://doaj.org/toc/1996-1944; https://doaj.org/article/0dd052cbc18346639f8e2103d69f7eca

الاتاحة: https://doi.org/10.3390/ma16103820
https://doaj.org/article/0dd052cbc18346639f8e2103d69f7eca