المؤلفون: Jichen Zhang, Junhui Rao, Zan Li, Zhaoyang Ming, Chi-Yuk Chiu, Kai-Kit Wong, Kin-Fai Tong, Ross Murch

المصدر: IEEE Open Journal of Antennas and Propagation, Vol 6, Iss 1, Pp 212-228 (2025)

مصطلحات موضوعية: Fluid antenna system (FAS), fluid antenna multiple access (FAMA), pixel-based reconfigurable antenna (PRA), PRA-FAS, high switching speed, pattern correlation, Telecommunication, TK5101-6720

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10740058/; https://doaj.org/toc/2637-6431

URL الوصول: https://doaj.org/article/d6760b7409cb460188aa1bd22afb7ad8

المؤلفون: Wöhrle, Dennis, Burger, Bruno, Ambacher, Oliver

مصطلحات موضوعية: Gallium nitride (GaN), Highly efficient power electronics, High switching speed, Power module packaging, Silicon carbide (SiC), Wide-bandgap (WBG)

وصف الملف: application/pdf

Relation: Energy technology; https://publica.fraunhofer.de/handle/publica/458052; https://doi.org/10.24406/publica-2319

الاتاحة: https://publica.fraunhofer.de/handle/publica/458052
https://doi.org/10.1002/ente.202300460
https://doi.org/10.24406/publica-2319

المؤلفون: Xinzhe Du (10288157), Haoyang Sun (2886200), He Wang (250350), Jiachen Li (669381), Yuewei Yin (1472155), Xiaoguang Li (148206)

مصطلحات موضوعية: Neuroscience, Physiology, Biotechnology, Sociology, Immunology, Infectious Diseases, Biological Sciences not elsewhere classified, tunable synapse functions, solid synaptic device, generation nonvolatile memories, density nonvolatile memories, attracted extensive attention, performance electronic synapses, 5 , 3 , giant electroresistance ratio, 4 , (∼ 1 u, 2 , high switching speed, giant electroresistance, speed switching, artificial synapses, ∼ 834, three bits, term potentiation, term depression, successfully fabricated, results highlight, promising applications

Relation: https://figshare.com/articles/journal_contribution/High-Speed_Switching_and_Giant_Electroresistance_in_an_Epitaxial_Hf_sub_0_5_sub_Zr_sub_0_5_sub_O_sub_2_sub_Based_Ferroelectric_Tunnel_Junction_Memristor/17695340

الاتاحة: https://doi.org/10.1021/acsami.1c18165.s001

المؤلفون: Igor E. Lysenko, Alexey V. Tkachenko, Elena V. Sherova, Alexander V. Nikitin

المصدر: Electronics; Volume 7; Issue 12; Pages: 415

مصطلحات موضوعية: RF MEMS, switch, analytical approach, low control voltage, high switching speed, high reliability

وصف الملف: application/pdf

Relation: Microwave and Wireless Communications; https://dx.doi.org/10.3390/electronics7120415

الاتاحة: https://doi.org/10.3390/electronics7120415

المؤلفون: Majewski, L. A., Balocco, C., King, R., Whitelegg, S., Song, A. M.

المصدر: Majewski , L A , Balocco , C , King , R , Whitelegg , S & Song , A M 2008 , ' Fast polymer nanorectifiers for inductively coupled RFID tags ' , Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol. 147 , no. 2-3 , pp. 289-292 . https://doi.org/10.1016/j.mseb.2007.08.031

مصطلحات موضوعية: High switching speed, Organic rectifier, Poly(dialkylquarterthiophene), Polymer nanowires, RFID tag

Relation: https://research.manchester.ac.uk/en/publications/2dad5020-cbb7-4067-bd20-f52fd8a38426

الاتاحة: https://research.manchester.ac.uk/en/publications/2dad5020-cbb7-4067-bd20-f52fd8a38426
https://doi.org/10.1016/j.mseb.2007.08.031

المؤلفون: Chen, Zheng

Thesis Advisors: Electrical and Computer Engineering, Boroyevich, Dushan, Ngo, Khai D. T., Wang, Fei Fred

مصطلحات موضوعية: SiC MOSFET, SiC JFET, High switching speed, Parasitic impedances, Parametric study, Modeling, Characterization

وصف الملف: application/pdf

Relation: Chen_Z_T_2009.pdf

الاتاحة: http://hdl.handle.net/10919/30778
http://scholar.lib.vt.edu/theses/available/etd-01012010-163354/

المؤلفون: Youngin Goh (11786347), Junghyeon Hwang (11786350), Minki Kim (548893), Yongsun Lee (11786353), Minhyun Jung (4326718), Sanghun Jeon (1535008)

مصطلحات موضوعية: Biophysics, Medicine, Cell Biology, Molecular Biology, Biotechnology, Sociology, Infectious Diseases, Space Science, Biological Sciences not elsewhere classified, ultrathin hafnia film, stackable memory components, securing read margin, remains challenging due, inherent weak polarization, giant tunneling electroresistance, ferroelectric tunnel junction, ferroelectric capacitor induced, diffusion barrier layer, point synapse arrays, bottom metal electrode, proposed ftj exhibits, free ftj devices, high switching speed, 8 , scale crossbar arrays, scale arrays, electrode results, crossbar architectures, suppress sneak, stress engineering

Relation: https://figshare.com/articles/journal_contribution/Selector-less_Ferroelectric_Tunnel_Junctions_by_Stress_Engineering_and_an_Imprinting_Effect_for_High-Density_Cross-Point_Synapse_Arrays/17118760

الاتاحة: https://doi.org/10.1021/acsami.1c14952.s001

المؤلفون: 徐清祥, 連振炘

المساهمون: 徐清祥, 連振炘

مصطلحات موضوعية: 絕緣閘雙極性電晶體, 電力電子, 高閂鎖能力, 高切換速度, Isolated gate bipolar transistor (IGBT), Power electronics, High latch up immunity, High switching speed

Time: 59

وصف الملف: 173013 bytes; application/pdf

Relation: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/9563

الاتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/9563