المؤلفون: Roman Golman, Netanel Nachum, Tomer Cohen, Robert Giterman, Adam Teman

المصدر: IEEE Access, Vol 9, Pp 105831-105840 (2021)

مصطلحات موضوعية: Low power, GC-eDRAM, retention time, hidden refresh, embedded memory, gain cells, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9495814/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/fd497fd1d0b642789ad4b673dee32b88